Grain growth in nanocrystalline copper thin films investigated by non-ambient X-ray diffraction measurements

2009 ◽  
Vol 24 (2) ◽  
pp. 85-88 ◽  
Author(s):  
Y. Kuru ◽  
M. Wohlschlögel ◽  
U. Welzel ◽  
E.J. Mittemeijer
Keyword(s):  
Thin Films ◽  
Ambient Temperature ◽  
Grain Growth ◽  
Driving Forces ◽  
Crystal Defects ◽  
Coarse Grained ◽  
Relaxation Processes ◽  
X Ray Diffraction ◽  
X Ray

The microstructure evolution (crystallite size and microstrain) as well as the residual stress of Cu thin films of various thicknesses (250 nm, 500 nm, and 1 μm) on passivated Si substrates during isochronal annealing was investigated by in situ X-ray diffraction measurements in the temperature range between 25 °C and 250 °C. Before annealing, the thermoelastic behavior was investigated excluding the occurrence of thermally activated relaxation processes occurring above ambient temperature by in situ stress measurements below ambient temperature. On this basis, above ambient temperature, effects of stress relaxation and emerging secondary stresses (due to grain growth and annihilation of crystal defects, giving rise to a considerable tensile stress contribution development) could be identified for all three layers in the temperature regime between ambient temperature and 250 °C. Grain growth in the nanocrystalline thin films started at much lower temperatures as compared to coarse-grained materials. The results were discussed in terms of the effects of different driving forces and grain-boundary mobilities acting in nanocrystalline materials.

Electric-field-induced lattice distortion in epitaxial BiFeO3 thin films as determined by in situ time-resolved x-ray diffraction

2017 ◽  
Vol 111 (8) ◽  
pp. 082907 ◽  
Author(s):  
Seiji Nakashima ◽  
Osami Sakata ◽  
Hiroshi Funakubo ◽  
Takao Shimizu ◽  
Daichi Ichinose ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Lattice Distortion ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Bifeo3 Thin Films

Thermal stability and miscibility of co-evaporated methyl ammonium lead halide (MAPbX3, X = I, Br, Cl) thin films analysed by in situ X-ray diffraction

2018 ◽  
Vol 6 (24) ◽  
pp. 11496-11506 ◽  
Author(s):  
Paul Pistor ◽  
Thomas Burwig ◽  
Carlo Brzuska ◽  
Björn Weber ◽  
Wolfgang Fränzel
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Thermal Treatment ◽  
Phase Evolution ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray ◽  
Subsequent Thermal Treatment ◽  
Lead Halide

We present the identification of crystalline phases by in situ X-ray diffraction during growth and monitor the phase evolution during subsequent thermal treatment of CH3NH3PbX3 (X = I, Br, Cl) perovskite thin films.

Classification of the Modes of Dissociation in Immiscible Cu-Alloy Thin Films

1999 ◽  
Vol 564 ◽  
Author(s):  
K. Barmak ◽  
G. A. Lucadamo ◽  
C. Cabral ◽  
C. Lavoie ◽  
J. M. E. Harper
Keyword(s):  
Thin Films ◽  
Driving Forces ◽  
Texture Evolution ◽  
Substantial Reduction ◽  
Alloying Elements ◽  
X Ray Diffraction ◽  
Cu Alloy ◽  
Transmission Electron ◽  
Evolution Of Microstructure

AbstractWe have found the dissociation behavior of immiscible Cu-alloy thin films to fall into three broad categories that correlate most closely with the form of the Cu-rich end of the binary alloy phase diagrams. The motivation for these studies was to use the energy released by the dissociation of an immiscible alloy, in addition to other driving forces commonly found in thin films and lines, to promote grain growth and texture evolution. In this work, the dissociation behavior of eight dilute (3.3 ± 0.5 at% solute) binary Cu-systems was investigated, with five alloying elements selected from group VB and VIB, two from group VillA, and one from group 1B. These alloying elements are respectively V, Nb, Ta, Cr, Mo, Fe, Ru and Ag. Several experimental techniques, including in situ resistance and stress measurements as well as in situ synchrotron x-ray diffraction, were used to follow the progress of solute precipitation in approximately 500 nm thick films. In addition, transmission electron microscopy was used to investigate the evolution of microstructure of Cu(Ta) and Cu(Ag). For all eight alloys, dissociation occurred upon heating, with the rejection of solute and evolution of microstructure and texture often occurring in multiple steps that range over several hundred degrees between approximately 100 and 900°C. However, in most cases, substantial reduction in resistivity of the films took place at temperatures of interest to metallization schemes, namely below 400°C.

In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO2 and V2O3 thin films

2015 ◽  
Vol 3 (43) ◽  
pp. 11357-11365 ◽  
Author(s):  
Geert Rampelberg ◽  
Bob De Schutter ◽  
Wouter Devulder ◽  
Koen Martens ◽  
Iuliana Radu ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Study ◽  
Resistance Switching ◽  
X Ray Diffraction ◽  
X Ray

VO2 and V2O3 thin films were prepared during in situ XRD investigation by oxidation and reduction of V and V2O5. Films show up to 5 orders of magnitude resistance switching.

In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment

2005 ◽  
Vol 244 (1-4) ◽  
pp. 281-284 ◽  
Author(s):  
Naohiko Kato ◽  
Ichiro Konomi ◽  
Yoshiki Seno ◽  
Tomoyoshi Motohiro
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Diffraction Study ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
X Ray
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