Towards fast reciprocal space mapping

2005 ◽  
Vol 20 (02) ◽  
pp. 125-127 ◽  
Author(s):  
J. F. Woitok ◽  
A. Kharchenko
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

Time-resolved X-ray reciprocal space mapping of the crystal under external electric field

2018 ◽  
Vol 189 (02) ◽  
pp. 187-194 ◽  
Author(s):  
Nikita V. Marchenkov ◽  
Anton G. Kulikov ◽  
Ivan I. Atknin ◽  
Arsen A. Petrenko ◽  
Alexander E. Blagov ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Time Resolved ◽  
X Ray

D-17 High-Resolution Reciprocal Space Mapping of InGaAs/GaAs Structures: From Pseudomorphic to Fully Relaxed State

2010 ◽  
Vol 25 (2) ◽  
pp. 218-218
Author(s):  
A. Ulyanenkov ◽  
F. Rinaldi ◽  
S. Menzel ◽  
A. Benediktovich ◽  
A. Zhilik ◽  
...  
Keyword(s):  
High Resolution ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

Embedded GaAs nanopillars studied by high resolution reciprocal space mapping and SEM

2014 ◽  
Vol 211 (6) ◽  
pp. 1319-1324
Author(s):  
Alexey V. Zozulya ◽  
Taras Slobodskyy ◽  
Thorben Bartsch ◽  
Alina Wetzel ◽  
David Sonnenberg ◽  
...  
Keyword(s):  
High Resolution ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

Structural modulation on multilayered bismuth cuprate observed by x-ray reciprocal space mapping

2005 ◽  
Vol 97 (10) ◽  
pp. 103904 ◽  
Author(s):  
Satoru Kaneko ◽  
Kensuke Akiyama ◽  
Yoshitada Shimizu ◽  
Hiroyasu Yuasa ◽  
Yasuo Hirabayashi ◽  
...  
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Structural Modulation

Mixed Phase Confirmation of InAsxP1−x Nanowire Array Using Modified Reciprocal Space Mapping

2021 ◽  
Author(s):  
In-Young Jeong ◽  
Minhyuk Choi ◽  
Jeongtae Kim ◽  
Young Heon Kim ◽  
Jae Cheol Shin ◽  
...  
Keyword(s):  
Nanowire Array ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Mixed Phase ◽  
Reciprocal Space Mapping

X-ray reciprocal space mapping of a (112) oriented HgTe/Hg0.1Cd0.9Te superlattice

1997 ◽  
Vol 71 (13) ◽  
pp. 1822-1824 ◽  
Author(s):  
M. Li ◽  
C. R. Becker ◽  
R. Gall ◽  
W. Faschinger ◽  
G. Landwehr
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

Characterization of metamorphic InxAl1−xAs∕GaAs buffer layers using reciprocal space mapping

2007 ◽  
Vol 101 (6) ◽  
pp. 063523 ◽  
Author(s):  
D. Lee ◽  
M. S. Park ◽  
Z. Tang ◽  
H. Luo ◽  
R. Beresford ◽  
...  
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Buffer Layers ◽  
Reciprocal Space Mapping

Tetragonal micro/nanotwins in 0.91Pb(Zn1/3Nb2/3)O3−0.09PbTiO3 revealed by reciprocal space mapping

2009 ◽  
Vol 94 (20) ◽  
pp. 202907 ◽  
Author(s):  
W. S. Chang ◽  
L. C. Lim ◽  
P. Yang ◽  
H. Miao ◽  
C.-S. Tu ◽  
...  
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

scholarly journals Monitoring microstructural evolution in-situ during cyclic deformation by high resolution reciprocal space mapping

2017 ◽  
Vol 843 ◽  
pp. 012031 ◽  
Author(s):  
Annika M. Diederichs ◽  
Felix Thiel ◽  
Torben Fischer ◽  
Ulrich Lienert ◽  
Wolfgang Pantleon
Keyword(s):  
High Resolution ◽  
Microstructural Evolution ◽  
Cyclic Deformation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

Reciprocal Space Mapping of X-Ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Tachibana ◽  
Y. Harada ◽  
S. Saito ◽  
S. Nunoue ◽  
H. Katsuno ◽  
...  
Keyword(s):  
Output Power ◽  
Sapphire Substrate ◽  
Light Output ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Light Output Power ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.

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