Structural modulation on multilayered bismuth cuprate observed by x-ray reciprocal space mapping

2005 ◽  
Vol 97 (10) ◽  
pp. 103904 ◽  
Author(s):  
Satoru Kaneko ◽  
Kensuke Akiyama ◽  
Yoshitada Shimizu ◽  
Hiroyasu Yuasa ◽  
Yasuo Hirabayashi ◽  
...  
2005 ◽  
Vol 44 (1A) ◽  
pp. 156-157 ◽  
Author(s):  
Satoru Kaneko ◽  
Kensuke Akiyama ◽  
Yoshitada Shimizu ◽  
Yasuo Hirabayashi ◽  
Keisuke Saito ◽  
...  

2006 ◽  
Vol 287 (2) ◽  
pp. 483-485 ◽  
Author(s):  
Satoru Kaneko ◽  
Kensuke Akiyama ◽  
Yoshitada Shimizu ◽  
Yasuo Hirabayashi ◽  
Seishiro Ohya ◽  
...  

2018 ◽  
Vol 189 (02) ◽  
pp. 187-194 ◽  
Author(s):  
Nikita V. Marchenkov ◽  
Anton G. Kulikov ◽  
Ivan I. Atknin ◽  
Arsen A. Petrenko ◽  
Alexander E. Blagov ◽  
...  

1997 ◽  
Vol 71 (13) ◽  
pp. 1822-1824 ◽  
Author(s):  
M. Li ◽  
C. R. Becker ◽  
R. Gall ◽  
W. Faschinger ◽  
G. Landwehr

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Tachibana ◽  
Y. Harada ◽  
S. Saito ◽  
S. Nunoue ◽  
H. Katsuno ◽  
...  

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.


1996 ◽  
Vol 79 (7) ◽  
pp. 3578-3584 ◽  
Author(s):  
J. A. Olsen ◽  
E. L. Hu ◽  
S. R. Lee ◽  
I. J. Fritz ◽  
A. J. Howard ◽  
...  

1999 ◽  
Vol 32 (10A) ◽  
pp. A26-A31 ◽  
Author(s):  
H R Reß ◽  
T Gerhard ◽  
C Schumacher ◽  
V Hock ◽  
M Li ◽  
...  

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