Ferroelectric HfZrO Films: Process, Characterization and Devices
Keyword(s):
X Ray
◽
This is presentation number 696 from the 2018 ECS/Aimes international meeting within the symposium D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 16. This talks covers joint work on ferroelectric films and devices between Tokyo Electron, SUNY Polytechnic Institute, and Notre Dame. Polarization is correlated to structural characterization using electrical measurements combined with Grazing Incidence X-Ray Diffraction. Test devices were fabricated and characterized to demonstrate and investigate how ferroelectric HfZrO can be used for various electronic applications including memory, logic, and neuromorphic devices.
2005 ◽
Vol 108-109
◽
pp. 741-748
◽
2013 ◽
Vol 69
(2)
◽
pp. 261-277
2004 ◽
Vol 126
(13)
◽
pp. 4084-4085
◽
1989 ◽
Vol 50
(C7)
◽
pp. C7-225-C7-229