scholarly journals Ferroelectric HfZrO Films: Process, Characterization and Devices

2018 ◽  
Author(s):  
Robert D. Clark

This is presentation number 696 from the 2018 ECS/Aimes international meeting within the symposium D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 16. This talks covers joint work on ferroelectric films and devices between Tokyo Electron, SUNY Polytechnic Institute, and Notre Dame. Polarization is correlated to structural characterization using electrical measurements combined with Grazing Incidence X-Ray Diffraction. Test devices were fabricated and characterized to demonstrate and investigate how ferroelectric HfZrO can be used for various electronic applications including memory, logic, and neuromorphic devices.

2005 ◽  
Vol 108-109 ◽  
pp. 741-748 ◽  
Author(s):  
P. Zaumseil ◽  
T. Schroeder ◽  
G. Weidner

The use of heteroepitaxial Si / Pr2O3 / Si(111) systems as semiconductor-insulatorsemiconductor (SIS) stacks in future applications requires a detailed structural characterization. We used X-ray reflectivity (XRR) to control layer thickness and interface roughness, standard X-ray diffraction (XRD) to analyze the Pr2O3 phase, orientation and crystal perfection, and grazing incidence XRD to study the thin epitaxial Si top layer. Transmission electron microscopy (TEM) was used to prove the results by direct imaging on a microscopic scale. Pr2O3 grows epitaxially in its hexagonal phase and (0001) orientation on Si(111) substrates. An epitaxial Si overgrowth in (111) orientation and good perfection is possible, but such Si layers exhibit two stacking twins, one with the same in-plane orientation as the substrate and one rotated by 180° around the Si [111] direction.


1997 ◽  
Vol 119 (46) ◽  
pp. 11211-11216 ◽  
Author(s):  
Hanna Rapaport ◽  
Ivan Kuzmenko ◽  
Kristian Kjaer ◽  
Paul Howes ◽  
Wim Bouwman ◽  
...  

Langmuir ◽  
2002 ◽  
Vol 18 (21) ◽  
pp. 8260-8262 ◽  
Author(s):  
Jeffrey T. Culp ◽  
Mark Davidson ◽  
Randolph S. Duran ◽  
Daniel R. Talham

2004 ◽  
Vol 126 (13) ◽  
pp. 4084-4085 ◽  
Author(s):  
Sandra E. Fritz ◽  
Stephen M. Martin ◽  
C. Daniel Frisbie ◽  
Michael D. Ward ◽  
Michael F. Toney

2000 ◽  
Vol 628 ◽  
Author(s):  
Sophie Besson ◽  
Catherine Jacquiod ◽  
Thierry Gacoin ◽  
André Naudon ◽  
Christian Ricolleau ◽  
...  

ABSTRACTA microstructural study on surfactant templated silica films is performed by coupling traditional X-Ray Diffraction (XRD) and Transmission Electronic Microscopy (TEM) to Grazing Incidence Small Angle X-Ray Scattering (GISAXS). By this method it is shown that spin-coating of silicate solutions with cationic surfactant cetyltrimethylammonium bromide (CTAB) as a templating agent provides 3D hexagonal structure (space group P63/mmc) that is no longer compatible with the often described hexagonal arrangement of tubular micelles but rather with an hexagonal arrangement of spherical micelles. The extent of the hexagonal ordering and the texture can be optimized in films by varying the composition of the solution.


Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.


Sign in / Sign up

Export Citation Format

Share Document