Two-Dimensional SiOx As a High Performance Li Storage Material Prepared By Solution Evaporation Induced Interfacial Sol-Gel Reaction

2016 ◽  
Keyword(s):  
High Performance ◽  
Sol Gel ◽  
Two Dimensional ◽  
Storage Material ◽  
Li Storage

scholarly journals Si Nanocrystal-Embedded SiO x nanofoils: Two-Dimensional Nanotechnology-Enabled High Performance Li Storage Materials

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Hyundong Yoo ◽  
Eunjun Park ◽  
Juhye Bae ◽  
Jaewoo Lee ◽  
Dong Jae Chung ◽  
...  
Keyword(s):  
High Performance ◽  
Two Dimensional ◽  
Storage Materials ◽  
Si Nanocrystal ◽  
Li Storage

A corn-like graphene–SnO2–carbon nanofiber composite as a high-performance Li-storage material

2014 ◽  
Vol 2 (13) ◽  
pp. 4524 ◽  
Author(s):  
Youlan Zou ◽  
Xiangyang Zhou ◽  
Jing Xie ◽  
Qunchao Liao ◽  
Bin Huang ◽  
...  
Keyword(s):  
High Performance ◽  
Carbon Nanofiber ◽  
Storage Material ◽  
Nanofiber Composite ◽  
Li Storage

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals High performance self-powered photodetector based on 1D Te-2D WS2 mixed-dimensional heterostructure

2021 ◽  
Author(s):  
Lixiang Han ◽  
Mengmeng Yang ◽  
Peiting Wen ◽  
Wei Gao ◽  
nengjie huo ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Sharp Interface ◽  
Two Dimensional ◽  
High Quality ◽  
One Dimensional ◽  
Self Powered

One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...

scholarly journals A simple approach to prepare fluorescent molecularly imprinted nanoparticles

RSC Advances ◽  
2021 ◽  
Vol 11 (13) ◽  
pp. 7732-7737
Author(s):  
Fenying Wang ◽  
Dan Wang ◽  
Tingting Wang ◽  
Yu Jin ◽  
Baoping Ling ◽  
...  
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Sol Gel ◽  
Silica Sol ◽  
Simple Approach ◽  
Imprinted Polymer ◽  
Molecularly Imprinted ◽  
Low Toxicity ◽  
Good Biocompatibility ◽  
Molecularly Imprinted Nanoparticles

Fluorescent molecularly imprinted polymer (FMIP) gains great attention in many fields due to their low cost, good biocompatibility and low toxicity. Here, a high-performance FMIP was prepared based on the autocatalytic silica sol–gel reaction.

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