Formation of Nickel-Silicide Selective Emitter by Laser-Induced Annealing for p-Type Solar Cell Application

2011 ◽  
Keyword(s):  
Solar Cell ◽  
Nickel Silicide ◽  
Solar Cell Application ◽  
Selective Emitter ◽  
P Type

scholarly journals p-Type a-Si:H Doping Using Plasma Immersion Ion Implantation for Silicon Heterojunction Solar Cell Application

Solar RRL ◽  
2017 ◽  
Vol 1 (2) ◽  
pp. 1600007 ◽  
Author(s):  
Tristan Carrere ◽  
Delfina Muñoz ◽  
Marianne Coig ◽  
Christophe Longeaud ◽  
Jean-Paul Kleider
Keyword(s):  
Solar Cell ◽  
Ion Implantation ◽  
Type A ◽  
Heterojunction Solar Cell ◽  
Solar Cell Application ◽  
Silicon Heterojunction Solar Cell ◽  
Plasma Immersion Ion Implantation ◽  
P Type

Optimization of wire array formation in p-type silicon for solar cell application

2011 ◽  
Vol 11 (1) ◽  
pp. S34-S38 ◽  
Author(s):  
Hwan Soo Jang ◽  
Byeong-Yun Oh ◽  
Ho-Jin Choi ◽  
Seong-Ho Baek ◽  
Seong Been Kim ◽  
...  
Keyword(s):  
Solar Cell ◽  
Wire Array ◽  
Solar Cell Application ◽  
Type Silicon ◽  
P Type

scholarly journals Bifacial p-Type PERC Solar Cell with Efficiency over 22% Using Laser Doped Selective Emitter

Energies ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1388 ◽  
Author(s):  
Caixia Zhang ◽  
Honglie Shen ◽  
Luanhong Sun ◽  
Jiale Yang ◽  
Shiliang Wu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Laser Power ◽  
Silicon Solar Cells ◽  
Selective Emitter ◽  
Commercial Line ◽  
Scan Speed ◽  
P Type ◽  
Bifacial Solar Cell ◽  
Different Thickness ◽  
Sinx Layer

In this paper, we report one bifacial p-type PERC solar cell with efficiency over 22% using laser doped selective emitter produced in larger-scale commercial line on 6-inch mono-crystalline wafer. On front side of the solar cell, square resistance of p-n junction was found to be closely related with laser power at certain laser scan speed and frequency. On the other side, the rear fingers with different ratios of height and width and rear silicon nitride (SiNx) layer with different thickness were optimized, and a highest rear efficiency of the bifacial solar cell was obtained. Finally, bifacial silicon solar cells with the front and rear efficiencies exceeding 22% and 15% (AM1.5, 1000 W/m2, 25 °C) were successfully achieved, respectively.

MOCVD Growth of High Hole Concentration (〉2x1019 cm-3) P-Type InGaN for Solar Cell Application

2008 ◽  
Author(s):  
Andrew Melton ◽  
Hongbo Yu ◽  
Omkar Jani ◽  
Balakrishnam R. Jampana ◽  
Shen-Jie Wang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Hole Concentration ◽  
Solar Cell Application ◽  
Mocvd Growth ◽  
High Hole Concentration ◽  
P Type

Structural study of p-type μc-Si layer for solar cell application

2000 ◽  
Vol 266-269 ◽  
pp. 171-175 ◽  
Author(s):  
Toshiaki Sasaki ◽  
Shinji Fujikake ◽  
Katsuya Tabuchi ◽  
Takashi Yoshida ◽  
Toshio Hama ◽  
...  
Keyword(s):  
Solar Cell ◽  
Structural Study ◽  
Solar Cell Application ◽  
P Type

scholarly journals Study on the deposition of amorphous silicon and ito thin films for heterojunction solar cell application

2013 ◽  
Vol 16 (1) ◽  
pp. 101-111
Author(s):  
Chien Mau Dang ◽  
Tung Thanh Bui ◽  
Hung Thanh Le ◽  
Vu Ngoc Hoang ◽  
Linh Ngoc Tran ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Sheet Resistance ◽  
Indium Tin Oxide ◽  
High Efficiency ◽  
Cell Structure ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Ito Thin Films ◽  
P Type

In the heterojunction with intrinsic thin-layer (HIT) solar cell structure studied in this work, an intrinsic amorphous silicon (a-Si) layer followed by a n-type amorphous silicon was deposited on a p-type Czochralski (CZ) monocrystalline silicon (c-Si) wafer by plasma enhanced chemical vapor deposition (PECVD) method to form an heterojunction device. Then, indium tin oxide (ITO) layer was formed by DC magnetron sputtering as the top electrode and the anti-reflection coating layer. In order to obtain the high efficiency heterojunction structure, two important aspects were focused: improving the passivation properties of a-Si/c-Si heterojunction and reducing the light absorption and the sheet resistance of ITO layers. It was found that hydrogenated amorphous silicon (a- Si:H) layers can be grown at low substrate temperature, about 200°C. High-quality ITO layers with the sheet resistance less than 15 ohm/sq and the transmittance of about 70%, can be deposited at relatively low DC power (50W).

19.1 % laser-doped selective emitter P-type multi-crystalline UMG silicon solar cell

2015 ◽  
Author(s):  
Pei Hsuan Doris Lu ◽  
Brett Hallam ◽  
Catherine Chan ◽  
Alison Wenham ◽  
Malcolm Abbott ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Selective Emitter ◽  
P Type
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