scholarly journals GaN Electronics for High Power, High Temperature Applications

2000 ◽  
Vol 9 (2) ◽  
pp. 34-39
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
A. P. Zhang ◽  
G. Dang ◽  
X. A. Cao ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
Temperature Applications

Piezoelectric materials for high power, high temperature applications

2005 ◽  
Vol 59 (27) ◽  
pp. 3471-3475 ◽  
Author(s):  
Shujun Zhang ◽  
Ru Xia ◽  
Laurent Lebrun ◽  
Dean Anderson ◽  
Thomas R. Shrout
Keyword(s):  
High Temperature ◽  
High Power ◽  
Piezoelectric Materials ◽  
Temperature Applications

New conductive thick-film paste based on silver nanopowder for high power and high temperature applications

2011 ◽  
Vol 51 (7) ◽  
pp. 1235-1240 ◽  
Author(s):  
Małgorzata Jakubowska ◽  
Mateusz Jarosz ◽  
Konrad Kiełbasinski ◽  
Anna Młożniak
Keyword(s):  
High Temperature ◽  
Thick Film ◽  
High Power ◽  
Temperature Applications

High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications

2004 ◽  
Vol 457-460 ◽  
pp. 957-962 ◽  
Author(s):  
Jian Hui Zhao ◽  
Larry X. Li ◽  
Kiyoshi Tone ◽  
Petre Alexandrov ◽  
Leonid Fursin ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Power ◽  
Temperature Applications

An SEM Investigation of Annealing Encapsulants for SiC

2000 ◽  
Vol 6 (S2) ◽  
pp. 1094-1095
Author(s):  
M. H. Ervin ◽  
K. A. Jones ◽  
M. A. Derenge ◽  
K. W. Kirchnef ◽  
M.C. Wood ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
Engine Oil ◽  
Robust Performance ◽  
Chemical Inertness ◽  
High Breakdown Electric Field ◽  
Sem Investigation ◽  
Temperature Applications

Advancing technology continues to place greater and greater demands on semiconductor devices. It is clear that Si technology alone will not be able to meet all of these demands. Silicon Carbide (SiC) is a promising material for highpower and high-temperature applications, such as SiC devices for controlling power in a more electric vehicle in which the SiC device is cooled by the engine oil (200 C.) SiC is well suited for high-power/temperature applications due to its large bandgap of 3.03 eV (for 6H), high breakdown electric field of 2.4 x 106 V/cm (again for 6H), thermal stability, and chemical inertness. These properties hold the promise of reliable and robust performance, but the latter two also present challenges to fabricating such devices. For instance, a key part of making devices involves selected area doping. This is typically accomplished with ion implantation, because the rate of diffusion is so low, followed with an anneal to remove the implant damage and electrically activate the dopant.

Voltage control of magnetism in FeGaB/PIN-PMN-PT multiferroic heterostructures for high-power and high-temperature applications

2015 ◽  
Vol 106 (2) ◽  
pp. 022901 ◽  
Author(s):  
Zhongqiang Hu ◽  
Tianxiang Nan ◽  
Xinjun Wang ◽  
Margo Staruch ◽  
Yuan Gao ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
Voltage Control ◽  
Multiferroic Heterostructures ◽  
Temperature Applications

scholarly journals Modeling of gallium nitride transistors for high power and high temperature applications

2020 ◽  
Author(s):  
◽  
Samira Shamsir
Keyword(s):  
High Temperature ◽  
Analytical Model ◽  
High Power ◽  
Research Work ◽  
Device Simulation ◽  
Device Modeling ◽  
Power Devices ◽  
Power Transistors ◽  
Spice Model ◽  
Temperature Applications

Wide bandgap (WBG) semiconductors such as GaN and SiC are emerging as promising alternatives to Si for new generation of high efficiency power devices. GaN has attracted a lot of attention recently because of its superior material properties leading to potential realization of power transistors for high power, high frequency, and high temperature applications. In order to utilize the full potential of GaN-based power transistors, proper device modeling is essential to verify its operation and improve the design efficiency. In this view, this research work presents modeling and characterization of GaN transistors for high power and high temperature applications. The objective of this research work includes three key areas of GaN device modeling such as physics-based analytical modeling, device simulation with numerical simulator and electrothermal SPICE model for circuit simulation. The analytical model presented in this dissertation enables understanding of the fundamental physics of this newly emerged GaN device technology to improve the operation of existing device structures and to optimize the device configuration in the future. The numerical device simulation allows to verify the analytical model and study the impact of different device parameters. An empirical SPICE model for standard circuit simulator has been developed and presented in the dissertation which allows simulation of power electronic circuits employing GaN power devices. The empirical model provides a good approximation of the device behavior and creates a link between the physics-based analytical model and the actual device testing data. Furthermore, it includes an electrothermal model which can predict the device behavior at elevated temperatures as required for high temperature applications.

Growth of Pb(Fe1/2Nb1/2)O3–Pb(Yb1/2Nb1/2)O3–PbTiO3 piezo-/ferroelectric crystals for high power and high temperature applications

CrystEngComm ◽  
2012 ◽  
Vol 14 (13) ◽  
pp. 4407 ◽  
Author(s):  
Chao He ◽  
Xiuzhi Li ◽  
Zujian Wang ◽  
Ying Liu ◽  
Dongquan Shen ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
Ferroelectric Crystals ◽  
Temperature Applications

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

2011 ◽  
Vol 324 ◽  
pp. 46-51 ◽  
Author(s):  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Herve Morel ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Power ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Power Devices ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Bandgap Materials ◽  
Temperature Applications

Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.

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