Influence of Light Ion Irradiation on the Current-Voltage Characteristics of Electrochemical Anodization of p-Type Silicon

2014 ◽  
Vol 161 (5) ◽  
pp. E97-E103 ◽  
Author(s):  
D. Q. Liu ◽  
Z. Y. Dang ◽  
M. B. H. Breese ◽  
D. J. Blackwood
Keyword(s):  
Ion Irradiation ◽  
Electrochemical Anodization ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

Investigation of current-voltage characteristics of p-type silicon during electrochemical anodization and application to doping profiling

2011 ◽  
Vol 8 (3) ◽  
pp. 784-787
Author(s):  
Ahmed Gharbi ◽  
Boudjemaa Remaki ◽  
Aomar Halimaoui ◽  
Daniel Bensahel ◽  
Abdelkader Souifi
Keyword(s):  
Electrochemical Anodization ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

scholarly journals Применение селективного контакта MoO-=SUB=-x-=/SUB=-/p-Si для оценки деградации приповерхностной области кремния

2020 ◽  
Vol 46 (24) ◽  
pp. 37
Author(s):  
Д.А. Кудряшов ◽  
А.С. Гудовских ◽  
А.А. Максимова ◽  
А.И. Баранов ◽  
А.В. Уваров ◽  
...  
Keyword(s):  
Surface Layer ◽  
Magnetron Sputtering ◽  
Silicon Surface ◽  
Silicon Oxide ◽  
Near Surface ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Degree Of Damage ◽  
P Type

The possibility of evaluation the degree of damage to the near-surface layer of p-type silicon using a selective contact based on MoOx/p-Si is shown. A strong sensitivity of the current-voltage characteristics to the states on the silicon surface formed during the deposition of silicon oxide by magnetron sputtering is demonstrated.

Influence of copper contamination on the illuminated forward and dark reverse current-voltage characteristics of multicrystalline p-type silicon solar cells

2014 ◽  
Vol 11 (11-12) ◽  
pp. 1697-1702 ◽  
Author(s):  
Tleuzhan Turmagambetov ◽  
Sébastien Dubois ◽  
Jean-Paul Garandet ◽  
Benoit Martel ◽  
Nicolas Enjalbert ◽  
...  
Keyword(s):  
Solar Cells ◽  
Reverse Current ◽  
Silicon Solar Cells ◽  
Copper Contamination ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

Band-Bending Effects on Field Electron Emission From N- and P-Type Silicon Gated Emitter Tips

1999 ◽  
Vol 558 ◽  
Author(s):  
T. Matsukawa ◽  
K. Tokunaga ◽  
S. Kanemaru ◽  
J. Itoh
Keyword(s):  
Field Emission ◽  
Potential Barrier ◽  
Device Simulation ◽  
Surface States ◽  
Emission Characteristics ◽  
Band Bending ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTField emission characteristics from n- and p-type silicon gated emitter tips have been investigated in detail by means of experiments and theoretical estimation of band-bending induced by surface states. Single-tip emitters have been fabricated from n- and p-type silicon and their current-voltage characteristics have been evaluated. The field emission from the p-type emitter has been found to occur at lower extraction voltage than that of the n-type emitter. As the theoretical approach to the origin of the phenomena, potential distribution in the emitter tips has been calculated by using device simulation technique. The surface states of the n-type emitter tip are negatively charged and form a potential barrier against the electrons. On the contrary, there is no potential barrier in the p-type tips. The potential barrier in the n-type tip prevents electrons from reaching the tip apex. This is the reason why the emission current of the n-type emitter was suppressed lower than that of the p-type emitter.

Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

1999 ◽  
Vol 607 ◽  
Author(s):  
S. Kato ◽  
T. Horikoshi ◽  
T. Ohkubo ◽  
T. Iida ◽  
Y. Takano
Keyword(s):  
Silicon Germanium ◽  
Bulk Crystals ◽  
Temperature Dependent ◽  
Alloy Scattering ◽  
Self Diffusion ◽  
Pn Junction ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Current Voltage Characteristics ◽  
P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

The Current‐Voltage Characteristics of a Photoelectrochemical Cell Using p‐Type Porous Si

1985 ◽  
Vol 132 (2) ◽  
pp. 346-349 ◽  
Author(s):  
Nobuyoshi Koshida ◽  
Masahiro Nagasu ◽  
Takashi Sakusabe ◽  
Yuji Kiuchi
Keyword(s):  
Photoelectrochemical Cell ◽  
Porous Si ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 1167-1170 ◽  
Author(s):  
Vito Raineri ◽  
Fabrizio Roccaforte ◽  
Sebania Libertino ◽  
Alfonso Ruggiero ◽  
V. Massimino ◽  
...  
Keyword(s):  
Leakage Current ◽  
Ion Irradiation ◽  
Deep Level ◽  
Schottky Diodes ◽  
Arrhenius Dependence ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.

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