Increase in Ce3+Concentration of Ceria Nanoparticles for High Removal Rate of SiO2in Chemical Mechanical Planarization

2017 ◽  
Vol 6 (9) ◽  
pp. P681-P685 ◽  
Author(s):  
Kijung Kim ◽  
Dong Kee Yi ◽  
Ungyu Paik
Keyword(s):  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Ceria Nanoparticles ◽  
High Removal Rate

Understanding Selectivity on Germanium/SiO2 Chemical Mechanical Planarization Through Design of Experiments

2015 ◽  
Vol 1790 ◽  
pp. 19-24
Author(s):  
Ayse Karagoz ◽  
James Mal ◽  
G. Bahar Basim
Keyword(s):  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Active Agent ◽  
Chemical Mechanical Planarization ◽  
Sodium Dodecyl ◽  
Active Agent ◽  
High Mobility ◽  
High Removal Rate ◽  
The Impact

ABSTRACTThe continuous trend of achieving more complex microelectronics with smaller nodes yet larger wafer sizes in microelectronics manufacturing lead to aggressive development requirements for chemical mechanical planarization (CMP) process. Particularly, beyond the 14 nm technology the development needs made it a must to introduce high mobility channel materials such as Ge. CMP is an enabler for integration of these new materials into future devices. In this study, we implemented a design of experiment (DOE) methodology in order to understand the optimized CMP slurry parameters such as optimal concentration of surface active agent (sodium dodecyl sulfate-SDS), concentration of abrasive particles and pH from the viewpoint of high removal rate and selectivity while maintaining a defect free surface finish. The responses examined were particle size distribution (slurry stability), zeta potential, material removal rate (MRR) and the surface defectivity as a function of the selected design variables. The impact of fumed silica particle loadings, oxidizer (H2O2) concentration, SDS surfactant concentration and pH were analyzed on Ge/silica selectivity through material removal rate (MRR) surface roughness and defectivity analyses.

Effect of Complex Agent on Copper Dissolution in Alkaline Slurry for Chemical Mechanical Planarization

2012 ◽  
Vol 455-456 ◽  
pp. 1145-1148
Author(s):  
Yan Gang He ◽  
Jia Xi Wang ◽  
Xiao Wei Gan ◽  
Wei Juan Li ◽  
Yu Ling Liu
Keyword(s):  
Surface Roughness ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Dielectric Materials ◽  
Mechanism Analysis ◽  
Copper Dissolution ◽  
Complex Agent ◽  
High Removal Rate ◽  
Rc Delay ◽  
Low K

With the microelectronic technology node moves down to 45 nm and beyond, and to reduce the RC delay time, low-k dielectric materials have been used to replace regular dielectric materials. Therefore, the down force of chemical mechanical planarization (CMP) needs to decrease based on the characteristics of low-k materials: low mechanical strength. In this study, the effect of new complex agent on copper dissolution in alkaline slurry for CMP was investigated. Based on the reaction mechanism analysis of Cu in alkaline slurry in CMP, the performance of Cu removal rate and surface roughness condition were discussed. It has been confirmed that Cu1 slurry demonstrates a relatively high removal rate with low down force. And also, by utilizing the Cu1 slurry, good result of Cu surface roughness were obtained.

scholarly journals Novel Abrasive-Impregnated Pads and Diamond Plates for the Grinding and Lapping of Single-Crystal Silicon Carbide Wafers

2021 ◽  
Vol 11 (4) ◽  
pp. 1783
Author(s):  
Ming-Yi Tsai ◽  
Kun-Ying Li ◽  
Sun-Yu Ji
Keyword(s):  
Silicon Carbide ◽  
Wear Rate ◽  
Single Crystal ◽  
Traditional Method ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Grit ◽  
Ceramic Binder

In this study, special ceramic grinding plates impregnated with diamond grit and other abrasives, as well as self-made lapping plates, were used to prepare the surface of single-crystal silicon carbide (SiC) wafers. This novel approach enhanced the process and reduced the final chemical mechanical planarization (CMP) polishing time. Two different grinding plates with pads impregnated with mixed abrasives were prepared: one with self-modified diamond + SiC and a ceramic binder and one with self-modified diamond + SiO2 + Al2O3 + SiC and a ceramic binder. The surface properties and removal rate of the SiC substrate were investigated and a comparison with the traditional method was conducted. The experimental results showed that the material removal rate (MRR) was higher for the SiC substrate with the mixed abrasive lapping plate than for the traditional method. The grinding wear rate could be reduced by 31.6%. The surface roughness of the samples polished using the diamond-impregnated lapping plate was markedly better than that of the samples polished using the copper plate. However, while the surface finish was better and the grinding efficiency was high, the wear rate of the mixed abrasive-impregnated polishing plates was high. This was a clear indication that this novel method was effective and could be used for SiC grinding and lapping.

Derivation of Optimum Study Factors for Samples Contaminated with Cd Using Electric/Magnetic Field and ORP

2013 ◽  
Vol 813 ◽  
pp. 519-524
Author(s):  
Sang An Ha ◽  
Jei Pil Wang
Keyword(s):  
Magnetic Field ◽  
Heavy Metals ◽  
Removal Rate ◽  
Underground Water ◽  
Liquid Electrode ◽  
Oxidation Reduction ◽  
Oxidation Reduction Potential ◽  
Removal Of Heavy Metals ◽  
High Removal Rate ◽  
Membrane Treatment

A purpose of the present study is to derive optimum study factors for removal of heavy metals using combined alternating current electric/magnetic field and electric membranes for the area contaminated with heavy metals in soil or underground water. ORP (Oxidation Reduction Potential) analysis was conducted to determine an intensity of tendency for oxidation or reduction of the samples contaminated with heavy metals, and electrical membrane treatment was used with adjustment of concentrations and voltages of liquid electrode (Na2SO4) to derive a high removal rate. Removal constants were analyzed to be 0.0417, 0.119, 0.1594 when the voltages were 5V, 10V, 15V, respectively, and treatment efficiency was shown to increase as the liquid electrode concentration was increased. Keywords: heavy metals, electric/magnetic field, ORP, electrical membrane

Numerical Prediction of Contaminant Removal from Cavity in Horizontal Channel by Constrained Interpolated Profile Method

2014 ◽  
Vol 695 ◽  
pp. 384-388
Author(s):  
Nor Azwadi Che Sidik ◽  
A.S. Ahmad Sofianuddin ◽  
K.Y. Ahmat Rajab
Keyword(s):  
Reynolds Number ◽  
Aspect Ratio ◽  
Removal Rate ◽  
Contaminant Removal ◽  
Square Cavity ◽  
Profile Method ◽  
Aspect Ratios ◽  
Contaminants Removal ◽  
Parabolic Flow ◽  
High Removal Rate

In this paper, Constrained Interpolated Profile Method (CIP) was used to simulate contaminants removal from square cavity in channel flow. Predictions were conducted for the range of aspect ratios from 0.25 to 4.0. The inlet parabolic flow with various Reynolds number from 50 to 1000 was used for the whole presentation with the same properties of contaminants and fluid. The obtained results indicated that the percentage of removal increased at high aspect ratio of cavity and higher Reynolds number of flow but it shows more significant changes as increasing aspect ratio rather than increasing Reynolds number. High removal rate was found at the beginning of the removal process.

Effects of Alkaline Nano-SiO2 Abrasive on Planarization of 300mm Copper Patterned Wafer

2013 ◽  
Vol 634-638 ◽  
pp. 2949-2954
Author(s):  
Xin Liang Tang ◽  
Yu Ling Liu ◽  
Hong Yuan Zhang ◽  
Jie Bao
Keyword(s):  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Initial Step ◽  
Step Height ◽  
Copper Removal ◽  
Copper Wafers

Silica abrasive plays an important role in chemical mechanical planarization (CMP) of copper. In this paper, effect of different silica abrasive concentrations on copper removal rate and planarization performance of copper was investigated. The results show that the copper removal rate was increased as the concentration of silica abrasive increase. However, excessive abrasive will lead to a decreased copper removal rate. The initial step height values of the multilayer copper wafers were all about 2500Å, and after being polished for 30s, the remaining values of step height of slurry A, B, C and D were 717 Å, 906 Å, 1222 Å and 1493 Å. It indicates that alkaline copper slurries with different abrasive concentrations all had a good planarization performance on copper patterned wafer CMP. As the abrasive concentration increased, the planarization capability was enhanced.

High removal rate MRF[TM]

2021 ◽  
Author(s):  
William Messner ◽  
Christopher A. Hall
Keyword(s):  
Removal Rate ◽  
High Removal Rate

Preparation of Calcium Sulfate Anhydrate Whisker and a Primary Investigation of its Arsenic Removal Performance

2013 ◽  
Vol 690-693 ◽  
pp. 1013-1019
Author(s):  
Xiao Juan Chen ◽  
Liu Chun Yang ◽  
Jun Feng Zhang ◽  
Yan Huang
Keyword(s):  
Calcium Sulfate ◽  
Arsenic Removal ◽  
Removal Rate ◽  
Optical Microscope ◽  
Alkaline Condition ◽  
Crystal Water ◽  
Arsenic Uptake ◽  
Ft Ir ◽  
High Removal Rate ◽  
Calcium Sulfate Whisker

Calcium sulfate whisker (CSW) was prepared through the method of cooling recrystallization. In an attempt to develop its new application in environmental protection, we investigated the effect of calcination on the material properties and arsenic uptake performance of calcium sulfate whisker anhydrate (CSAW), which was obtained from CSW calcined at 600 °C for 2 h. Moreover, XRD, SEM, optical microscope, and FT-IR were used to characterize CSW samples. It was found that calcination played an important role in the whisker structure through changing the content of crystal water and the morphology. The CSAW material exhibited a high removal rate of As3+/As5+under strongly alkaline condition.

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