Aggressive Diamond Characterization and Wear Analysis during Chemical Mechanical Planarization

2012 ◽  
Vol 2 (1) ◽  
pp. P36-P41 ◽  
Author(s):  
Changhong Wu ◽  
Yun Zhuang ◽  
Xiaoyan Liao ◽  
Yubo Jiao ◽  
Yasa Adi Sampurno ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Wear Analysis

Aggressive Diamond Characterization and Wear Analysis During Chemical Mechanical Planarization

2013 ◽  
Vol 52 (1) ◽  
pp. 597-603
Author(s):  
A. Philipossian ◽  
C. Wu ◽  
Y. Zhuang ◽  
X. Liao ◽  
Y. Jiao ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Wear Analysis

Pad Wear Analysis during Interlayer Dielectric Chemical Mechanical Planarization

2012 ◽  
Vol 1 (5) ◽  
pp. N103-N105 ◽  
Author(s):  
Yubo Jiao ◽  
Yun Zhuang ◽  
Xiaomin Wei ◽  
Yasa Sampurno ◽  
Anand Meled ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Interlayer Dielectric ◽  
Wear Analysis ◽  
Pad Wear

Tool wear analysis in the turning of Inconel 625 alloy

2019 ◽  
Author(s):  
Diego de Medeiros Barbosa ◽  
Leticia Helena Guimarães Alvarinho ◽  
Aristides Magri ◽  
Daniel Suyama
Keyword(s):  
Tool Wear ◽  
Inconel 625 ◽  
Wear Analysis ◽  
Inconel 625 Alloy

A Latent Issue of Via Resistance: Mechanism and Solution

2018 ◽  
Author(s):  
Wentao Qin ◽  
Scott Donaldson ◽  
Dan Rogers ◽  
Lahcen Boukhanfra ◽  
Julien Thiefain ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Chemical Mechanical Planarization ◽  
Resistance Mechanism ◽  
Formation Enthalpy ◽  
Metal Line ◽  
Device Failure ◽  
Valence Electrons ◽  
Wafer Processing ◽  
Field Failure ◽  
And Tungsten

Abstract Many semiconductor products are manufactured with mature technologies involving the uses of aluminum (Al) lines and tungsten (W) vias. High resistances of the vias were sometimes observed only after electrical or thermal stress. A layer of Ti oxide was found on such a via. In the wafer processing, the post W chemical mechanical planarization (WCMP) cleaning left residual W oxide on the W plugs. Ti from the overlaying metal line spontaneously reduced the W oxide, through which Ti oxide formed. Compared with W oxide, the Ti oxide has a larger formation enthalpy, and the valence electrons of Ti are more tightly bound to the O ion cores. As a result, the Ti oxide is more resistive than the W oxide. Consequently, the die functioned well in the first test in the fab, but the via resistance increased significantly after a thermal stress, which led to device failure in the second test. The NH4OH concentration was therefore increased to more effectively remove residual W oxide, which solved the problem. The thermal stress had prevented the latent issue from becoming a more costly field failure.

A Proof for the Possibility of Ce-Oxide from CMP Residuals in Si-Wafers by Analytical TEM

2012 ◽  
Author(s):  
Wayne Zhao ◽  
Liem Do Thanh ◽  
Michael Gribelyuk ◽  
Mary-Ann Zaitz ◽  
Wing Lai
Keyword(s):  
Technology Development ◽  
Early Stage ◽  
Chemical Mechanical Planarization ◽  
Particle Cluster ◽  
Limited Region ◽  
Physical Evidence ◽  
Analytical Tem ◽  
Transmission Electron ◽  
Oxide Particles

Abstract Inclusion of cerium (Ce) oxide particles as an abrasive into chemical mechanical planarization (CMP) slurries has become popular for wafer fabs below the 45nm technology node due to better polishing quality and improved CMP selectivity. Transmission electron microscopy (TEM) has difficulties finding and identifying Ce-oxide residuals due to the limited region of analysis unless dedicated efforts to search for them are employed. This article presents a case study that proved the concept in which physical evidence of Ce-rich particles was directly identified by analytical TEM during a CMP tool qualification in the early stage of 20nm node technology development. This justifies the need to setup in-fab monitoring for trace amounts of CMP residuals in Si-based wafer foundries. The fact that Cr resided right above the Ce-O particle cluster, further proved that the Ce-O particles were from the wafer and not introduced during the sample preparation.

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