Effects of Thermal Annealing on the Electronic Structure and Hole-Injection Properties of Molybdenum-Doped Zinc Oxide∕Organic Semiconductor Interfaces

2012 ◽  
Vol 15 (6) ◽  
pp. J31
Author(s):  
Ji-Yun Chun ◽  
Jin-Woo Han ◽  
Tae-Wan Kim ◽  
Dae-Shik Seo
Keyword(s):  
Zinc Oxide ◽  
Electronic Structure ◽  
Thermal Annealing ◽  
Organic Semiconductor ◽  
Hole Injection ◽  
Semiconductor Interfaces

Organic semiconductor interfaces: electronic structure and transport properties

2000 ◽  
Vol 166 (1-4) ◽  
pp. 354-362 ◽  
Author(s):  
I.G. Hill ◽  
D. Milliron ◽  
J. Schwartz ◽  
A. Kahn
Keyword(s):  
Electronic Structure ◽  
Transport Properties ◽  
Organic Semiconductor ◽  
Semiconductor Interfaces

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Influence of Thermal Annealing on Microstructures of Zinc Oxide Films Deposited by RF Magnetron Sputtering

2007 ◽  
Vol 46 (6A) ◽  
pp. 3319-3323 ◽  
Author(s):  
Takahiro Hiramatsu ◽  
Mamoru Furuta ◽  
Hiroshi Furuta ◽  
Tokiyoshi Matsuda ◽  
Takashi Hirao
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Zinc Oxide Films

scholarly journals Influence of Thermal Annealing on the Electrical Properties of Poly(3-hexylthiophene)-Based Thin Film Diodes

2007 ◽  
Vol 62 (10-11) ◽  
pp. 609-619 ◽  
Author(s):  
Zivayi Chiguvare ◽  
Jürgen Parisi ◽  
Vladimir Dyakonov
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Indium Tin Oxide ◽  
Bulk Heterojunction ◽  
Polymer Chains ◽  
Hole Injection ◽  
Before And After ◽  
Output Characteristics ◽  
Al Thin Film ◽  
Poly Styrene Sulfonate

The effects of thermal annealing on the bulk transport properties of poly(3-hexylthiophene) (P3HT) were studied by analyzing room temperature current-voltage characteristics of polymer thin films sandwiched between indium tin oxide/poly[ethylene dioxythiophene]:poly[styrene sulfonate] (ITO/PEDOT:PSS) and aluminum electrodes, before and after a thermal annealing step. It was observed that annealing takes place in two steps: (1) Dedoping of the polymer of impurities such as oxygen, remnant solvent, water, leading to a decrease in the conductivity of the film, and (2) thermally induced motion of the polymer chains leading to closer packing, thus, stronger inter-chain interaction and, consequently, increase in conductivity. It was also observed that the ITO/PEDOT:PSS/P3HT hole injection barrier increases on annealing the ITO/PEDOT:PSS/P3HT/Al thin film devices. The implications of impurity dedoping and closer packing on the output characteristics of bulk heterojunction polymer-fullerene thin film solar cells are discussed.

scholarly journals A Study of Interfacial Electronic Structure at the CuPc/CsPbI2Br Interface

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 547
Author(s):  
Zengguang Tang ◽  
Liujiang Zhang ◽  
Zhenhuang Su ◽  
Zhen Wang ◽  
Li Chen ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Molecular Orbital ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Energy Gap ◽  
Hole Transport ◽  
Hole Injection ◽  
Band Bending ◽  
Valance Band Maximum ◽  
Interfacial Electronic Structure

In this article, CsPbI2Br perovskite thin films were spin-coated on FTO, on which CuPc was deposited by thermal evaporation. The electronic structure at the CsPbI2Br/CuPc interface was examined during the CuPc deposition by in situ X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) measurements. No downward band bending was resolved at the CsPbI2Br side, whereas there is ~0.23 eV upward band bending as well as a dipole of ~0.08 eV identified at the molecular side. Although the hole injection barrier as indicated by the energy gap from CsPbI2Br valance band maximum (VBM) to CuPc highest occupied molecular orbital (HOMO) was estimated to be ~0.26 eV, favoring hole extraction from CsPbI2Br to CuPc, the electron blocking barrier of ~0.04 eV as indicated by the offset between CsPbI2Br conduction band minimum (CBM) and CuPc lowest unoccupied molecular orbital (LUMO) is too small to efficiently block electron transfer. Therefore, the present experimental study implies that CuPc may not be a promising hole transport material for high-performance solar cells using CsPbI2Br as active layer.

Sign in / Sign up

Export Citation Format

Share Document