Effect of contamination on the electronic structure and hole-injection properties of MoO3/organic semiconductor interfaces

2010 ◽  
Vol 96 (13) ◽  
pp. 133308 ◽  
Author(s):  
J. Meyer ◽  
A. Shu ◽  
M. Kröger ◽  
A. Kahn
Keyword(s):  
Electronic Structure ◽  
Organic Semiconductor ◽  
Hole Injection ◽  
Semiconductor Interfaces

Organic semiconductor interfaces: electronic structure and transport properties

2000 ◽  
Vol 166 (1-4) ◽  
pp. 354-362 ◽  
Author(s):  
I.G. Hill ◽  
D. Milliron ◽  
J. Schwartz ◽  
A. Kahn
Keyword(s):  
Electronic Structure ◽  
Transport Properties ◽  
Organic Semiconductor ◽  
Semiconductor Interfaces

scholarly journals A Study of Interfacial Electronic Structure at the CuPc/CsPbI2Br Interface

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 547
Author(s):  
Zengguang Tang ◽  
Liujiang Zhang ◽  
Zhenhuang Su ◽  
Zhen Wang ◽  
Li Chen ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Molecular Orbital ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Energy Gap ◽  
Hole Transport ◽  
Hole Injection ◽  
Band Bending ◽  
Valance Band Maximum ◽  
Interfacial Electronic Structure

In this article, CsPbI2Br perovskite thin films were spin-coated on FTO, on which CuPc was deposited by thermal evaporation. The electronic structure at the CsPbI2Br/CuPc interface was examined during the CuPc deposition by in situ X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) measurements. No downward band bending was resolved at the CsPbI2Br side, whereas there is ~0.23 eV upward band bending as well as a dipole of ~0.08 eV identified at the molecular side. Although the hole injection barrier as indicated by the energy gap from CsPbI2Br valance band maximum (VBM) to CuPc highest occupied molecular orbital (HOMO) was estimated to be ~0.26 eV, favoring hole extraction from CsPbI2Br to CuPc, the electron blocking barrier of ~0.04 eV as indicated by the offset between CsPbI2Br conduction band minimum (CBM) and CuPc lowest unoccupied molecular orbital (LUMO) is too small to efficiently block electron transfer. Therefore, the present experimental study implies that CuPc may not be a promising hole transport material for high-performance solar cells using CsPbI2Br as active layer.

Interface electronic structure between organic semiconductor film and electrode metal probed by photoelectron yield spectroscopy

2012 ◽  
Vol 13 (2) ◽  
pp. 309-319 ◽  
Author(s):  
Kaname Kanai ◽  
Masato Honda ◽  
Hisao Ishii ◽  
Yukio Ouchi ◽  
Kazuhiko Seki
Keyword(s):  
Electronic Structure ◽  
Organic Semiconductor ◽  
Semiconductor Film ◽  
Electrode Metal

Fingerprint of Charge Redistribution in the Optical Spectra of Hybrid Inorganic/Organic Semiconductor Interfaces

2018 ◽  
Vol 122 (24) ◽  
pp. 12913-12919 ◽  
Author(s):  
Tino Meisel ◽  
Mino Sparenberg ◽  
Marcel Gawek ◽  
Sergey Sadofev ◽  
Björn Kobin ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Optical Spectra ◽  
Charge Redistribution ◽  
Semiconductor Interfaces
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