Study on Effective Methods and Mechanism of Inhibiting Cobalt Removal Rate in Chemical Mechanical Polishing of GLSI Low-Tech Node Copper Film

2019 ◽  
Vol 8 (11) ◽  
pp. P652-P660 ◽  
Author(s):  
Jiakai Zhou ◽  
Xinhuan Niu ◽  
Zhi Wang ◽  
Yaqi Cui ◽  
Jianchao Wang ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Copper Film ◽  
Mechanical Polishing ◽  
Cobalt Removal

Chemical-Mechanical Polishing of Wafers with Copper Film by Nano-Scale Abrasives

2008 ◽  
Vol 594 ◽  
pp. 181-186
Author(s):  
Jhy Cherng Tsai ◽  
Jin Fong Kao
Keyword(s):  
Citric Acid ◽  
Size Effect ◽  
Surface Quality ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Copper Film ◽  
Mechanical Polishing ◽  
Al2o3 Powder ◽  
Abrasive Size

In this paper, experiments are designed and conducted to investigate the effects of abrasive size for Chemical-Mechanical Polishing (CMP) of copper film under different additives in HNO3-based polishing slurries. Alumina modified colloidal silica 100S (φ26nm), 200S (φ40nm) and Al2O3 (φ90nm), are used as polishing abrasives in this study. Experiments showed the following results. (1) With citric acid as an additive to slurry, the removal rate (RR) of the CMP process increases with abrasive size. Surface quality, however, becomes worse at the same time. (2) With benzotriazole (BTA) as an additive, RR of the slurry with Al2O3 powder is slightly higher but it does not increase with the abrasive size in general. Surface quality tends to be worse at the same time though it is not as strong as that in the slurry with citric acid as the additive. (3) The size effect of abrasive on RR with citric acid as additive is stronger than that with BTA.

Analysis of the Tribological Mechanisms Arising in the Chemical Mechanical Polishing of Copper-Film Wafers When Using a Pad With Concentric Grooves

2006 ◽  
Vol 128 (3) ◽  
pp. 445-459 ◽  
Author(s):  
Jen Fin Lin ◽  
Sheng-Chao Chen ◽  
Yu Long Ouyang ◽  
Ming Shih Tsai
Keyword(s):  
Wear Rate ◽  
Chemical Mechanical Polishing ◽  
Reynolds Equation ◽  
Removal Rate ◽  
Copper Film ◽  
Groove Depth ◽  
Volume Flow ◽  
Mechanical Polishing ◽  
Flow Rates ◽  
Two Sides

An average Reynolds equation considering the effects of a pad’s annular grooves and surface roughness is developed in this study to examine mixed lubrication in the chemical mechanical polishing (CMP) of a copper-film silicon wafer. This equation is obtained on the basis of the principle that the pressure gradients and volume flow rates in the direction normal to the border of a groove and a plateau as well as on two sides of the border must be equal. The continuities of volume flow rates and hydrodynamic pressure on two sides of the border as well as in the direction normal to the border of a groove and a plateau are satisfied in order to develop this Reynolds equation. The removal rate model is obtained by taking the concentration of active abrasives in the slurry and the pad grooves into account. Theoretical results are also shown in order to investigate the effects of changing the groove depth and width on the removal rate and the nonuniformity of a copper-film wafer. The application of concentric grooves in general can lower the suction pressure (negative pressure) formed between the pad and the wafer, elevate the wear rate, and reduce the nonuniformity. However, the influences of the groove depth on wear rate and nonuniformity become insignificant when the depth is excessively large. The removal rate is reduced by increasing the groove width such that it finally approaches to the result of a nongrooved pad.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Modeling of Polishing Regimes in Chemical Mechanical Polishing

2005 ◽  
Vol 867 ◽  
Author(s):  
Suresh B. Yeruva ◽  
Chang-Won Park ◽  
Brij M. Moudgil
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Operating Conditions ◽  
Comprehensive Model ◽  
Mechanical Effects ◽  
Microelectronic Devices ◽  
Asperity Distribution ◽  
Modification Of The Surface

AbstractChemical mechanical polishing (CMP) is widely used for local and global planarization of microelectronic devices. It has been demonstrated experimentally in the literature that the polishing performance is a result of the synergistic effect of both the chemicals and the particles involved in CMP. However, the fundamental mechanisms of material removal and the interactions of the chemical and mechanical effects are not well understood. A comprehensive model for CMP was developed taking into account both the chemical and mechanical effects for monodisperse slurries. The chemical aspect is attributed to the chemical modification of the surface layer due to slurry chemistry, whereas the mechanical aspect is introduced by indentation of particles into the modified layer and the substrate depending on the operating conditions. In this study, the model is extended to include the particle size and pad asperity distribution effects. The refined model not only predicts the overall removal rate but also the surface roughness of the polished wafer, which is an important factor in CMP. The predictions of the model show reasonable agreement with the experimental observations.

A Model for Optimizing Material Removal Rate in Low-Pressure CMP: Effects of Pad Porosity and Abrasive Concentration

2008 ◽  
Author(s):  
Dinc¸er Bozkaya ◽  
Sinan Mu¨ftu¨
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Applied Pressure ◽  
Low Pressure ◽  
Mechanical Polishing ◽  
Low K

The necessity to planarize ultra low-k (ULK) dielectrics [1], and the desire to reduce polishing defects leads to use of lower polishing pressures in chemical mechanical polishing (CMP). However, lowering the applied pressure also decreases the material removal rate (MRR), which causes the polishing time for each wafer to increase. The goal of this work is to investigate effects of pad porosity and abrasive concentration on the MRR.

Investigation on Smoothing Silicon Carbide Wafer With a Combined Method of Mechanical Lapping and Photocatalysis Assisted Chemical Mechanical Polishing

2018 ◽  
Author(s):  
Zewei Yuan ◽  
Kai Cheng ◽  
Yan He ◽  
Meng Zhang
Keyword(s):  
Silicon Carbide ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Combined Method ◽  
Polishing Process ◽  
High Quality ◽  
Quality Surface ◽  
High Quality Surface

The high quality surface can exhibit the irreplaceable application of single crystal silicon carbide in the fields of optoelectronic devices, integrated circuits and semiconductor. However, high hardness and remarkable chemical inertness lead to great difficulty to the smoothing process of silicon carbide. Therefore, the research presented in this paper attempts to smooth silicon carbide wafer with photocatalysis assisted chemical mechanical polishing (PCMP) by using of the powerful oxidability of UV photo-excited hydroxyl radical on surface of nano-TiO2 particles. Mechanical lapping was using for rough polishing, and a material removal model was proposed for mechanical lapping to optimize the polishing process. Several photocatalysis assisted chemical mechanical polishing slurries were compared to achieve fine surface. The theoretical analysis and experimental results indicate that the material removal rate of lapping process decreases in index form with the decreasing of abrasive size, which corresponds with the model developed. After processed with mechanical lapping for 1.5 hours and subsequent photocatalysis assisted chemical mechanical polishing for 2 hours, the silicon carbide wafer obtains a high quality surface with the surface roughness at Ra 0.528 nm The material removal rate is 0.96 μm/h in fine polishing process, which is significantly influenced by factors such as ultraviolet irradiation, electron capture agent (H2O2) and acidic environment. This combined method can effectively reduce the surface roughness and improve the polishing efficiency on silicon carbide and other hard-inert materials.

scholarly journals Study on the Influence of Sapphire Crystal Orientation on Its Chemical Mechanical Polishing

2020 ◽  
Vol 10 (22) ◽  
pp. 8065
Author(s):  
Linlin Cao ◽  
Xiang Zhang ◽  
Julong Yuan ◽  
Luguang Guo ◽  
Teng Hong ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Material Properties ◽  
Chemical Mechanical Polishing ◽  
Crystal Orientation ◽  
Material Removal ◽  
Removal Rate ◽  
Substrate Material ◽  
Mechanical Polishing ◽  
Sapphire Crystal ◽  
Research Objects

Sapphire has been the most widely used substrate material in LEDs, and the demand for non-C-planes crystal is increasing. In this paper, four crystal planes of the A-, C-, M- and R-plane were selected as the research objects. Nanoindentation technology and chemical mechanical polishing technology were used to study the effect of anisotropy on material properties and processing results. The consequence showed that the C-plane was the easiest crystal plane to process with the material removal rate of 5.93 nm/min, while the R-plane was the most difficult with the material removal rate of 2.47 nm/min. Moreover, the research results have great guiding significance for the processing of sapphire with different crystal orientations.

Effect of Different Abrasives on Chemical Mechanical Polishing for Magnesia Alumina Spinel

2020 ◽  
Vol 866 ◽  
pp. 115-124
Author(s):  
Zhan Kui Wang ◽  
Ming Hua Pang ◽  
Jian Xiu Su ◽  
Jian Guo Yao
Keyword(s):  
Particle Size ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Key Factors ◽  
Particle Size Analyzer ◽  
Scanning Electron ◽  
Shape And Size

In this paper, a series of chemical mechanical polishing (CMP) experiments for magnesia alumina (Mg-Al) spinel were carried out with different abrasives, and the materials removal rate (MRR) and surface quality was evaluated to explore their different effects. The scanning electron microscope (SEM) and laser particle size analyzer were also employed to test the micro-shape and size distribution of abrasives. Then, the mechanism of different effects with different abrasives was analyzed in CMP for Mg-Al spinel. Those experimental results suggest that different subjecting pressure ratios of abrasives to polishing pad with different abrasive are the key factors leading to difference polishing performances in CMP.

Study on Chemical Mechanical Polishing Technology of Copper

2008 ◽  
Vol 373-374 ◽  
pp. 820-823
Author(s):  
Sheng Li Wang ◽  
Y.J. Yuan ◽  
Yu Ling Liu ◽  
X.H. Niu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Alkali Concentration ◽  
Copper Films ◽  
Optimum Conditions ◽  
Slurry Flow Rate ◽  
Polishing Pressure ◽  
Oxidizer Concentration

Chemical mechanical polishing (CMP) of copper films in alkaline slurries was investigated. In the copper CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water.The organic alkali was added to adjust the pH, H2O2 was used as an oxidizer.The effects of varying polishing temperature, polishing pressure, slurry flow rate, organic alkali concentration and oxidizer concentration on removal rate were investigated in order to determine the optimum conditions for those parameters. It is shown the chemical composition of the slurry was 2%~3% oxidizer concentration, 3% organic alkali concentration and proper amount surfactant is reasonable. The solid concentration of the polishing slurry was fixed at 20% by weight. The removal rate of copper could reach 700nm/min and the surface roughness after CMP was 0.49nm.

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