Quantum Analytical Modeling of Inversion Charge and Threshold Voltage in Modified Bi-Level FinFET (BL-FinFET)

2018 ◽  
Vol 7 (2) ◽  
pp. Q8-Q15 ◽  
Author(s):  
Rajesh Saha ◽  
Brinda Bhowmick ◽  
Srimanta Baishya
Keyword(s):  
Threshold Voltage ◽  
Analytical Modeling ◽  
Inversion Charge

Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile

2016 ◽  
Vol 45 (4) ◽  
pp. 2184-2192 ◽  
Author(s):  
Kunal Singh ◽  
Mirgender Kumar ◽  
Ekta Goel ◽  
Balraj Singh ◽  
Sarvesh Dubey ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Potential Distribution ◽  
Analytical Modeling ◽  
Doping Profile ◽  
Gate Underlap

scholarly journals Threshold voltage modeling in (100), (110) and (111) oriented nanoscale MOSFET substrates

2011 ◽  
Vol 8 (2) ◽  
pp. 147-154
Author(s):  
Amit Chaudhry ◽  
Nath Jatindra
Keyword(s):  
Threshold Voltage ◽  
Crystal Orientation ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Model ◽  
Inversion Charge ◽  
Effect Transistor ◽  
Good Agreement

An analytical model for the inversion layer quantization for nanoscale - Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with different crystallographic substrate orientations, such as (100), (110) and (111) has been developed. The threshold voltage analysis has been studied using the quantum inversion charge model under three substrate orientations. The results indicate a significant impact of crystal orientation on the threshold voltage and the inversion charge density. The results have also been compared with the numerically reported results and show good agreement.

scholarly journals Compact modeling of strained GAA SiNW

2019 ◽  
Vol 14 (1) ◽  
pp. 241
Author(s):  
Fatimah K. A Hamid ◽  
N. Ezaila Alias ◽  
R. Ismail ◽  
M. Anas Razali
Keyword(s):  
Threshold Voltage ◽  
Silicon Nanowire ◽  
Current Model ◽  
Drain Current ◽  
Cmos Technology ◽  
Compact Model ◽  
Compact Modeling ◽  
Smoothing Function ◽  
Inversion Charge ◽  
A Charge

<span>Strain-based on advanced MOSFET is a promising candidate for the future of CMOS technology. A numerical model is not favorable compared to a compact model because it cannot be integrated into most simulator software. Thus, a compact model is proposed to overcome the shortcomings in the analytical model. In this paper, a charge-based compact model is presented for long-channel strained Gate-All-Around Silicon Nanowire (GAA SiNW) from an undoped channel to a doped body. The model derivation is based on an inversion charge which has been solved explicitly using the smoothing function. The drain current model is formulated from Pao Sah’s dual integral which is formed in terms of inversion charge at the drain and source terminals. The proposed model has been extensively verified with the numerical simulator data. The strained effect on the electrical parameters are studied based on inversion charge, threshold voltage and current-voltage (I-V) characteristics. Results show that the current, the inversion charge and the threshold voltage can be greatly improved by the strain. The threshold voltage was reduced approximately 40% from the conventional GAA SiNW. Moreover, the inversion charge was improved by 30 % and the on-state current has doubled compared to unstrained device.</span>

Sign in / Sign up

Export Citation Format

Share Document