Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes

2018 ◽  
Vol 7 (6) ◽  
pp. Q116-Q122 ◽  
Author(s):  
Xingtong Liu ◽  
Ning Li ◽  
Jinfeng Hu ◽  
Yinlin Gao ◽  
Ruiqing Wang ◽  
...  
Keyword(s):  
Comparative Study ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting

Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

2005 ◽  
Vol 8 (11) ◽  
pp. G320 ◽  
Author(s):  
Woong-Ki Hong ◽  
June-O Song ◽  
Hyun-Gi Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4990-4992 ◽  
Author(s):  
June-O Song ◽  
Dong-Seok Leem ◽  
J. S. Kwak ◽  
O. H. Nam ◽  
Y. Park ◽  
...  
Keyword(s):  
Solid Solution ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Low resistance and highly reflective Cu–Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes

2004 ◽  
Vol 201 (12) ◽  
pp. 2823-2826 ◽  
Author(s):  
Dong-Seok Leem ◽  
June-O. Song ◽  
J. S. Kwak ◽  
J. Cho ◽  
H. Kim ◽  
...  
Keyword(s):  
Solid Solution ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Low Resistance and Reflective Mg-Doped Indium Oxide–Ag Ohmic Contacts for Flip-Chip Light-Emitting Diodes

2004 ◽  
Vol 16 (6) ◽  
pp. 1450-1452 ◽  
Author(s):  
J.-O. Song ◽  
D.-S. Leem ◽  
J.S. Kwak ◽  
O.H. Nam ◽  
Y. Park ◽  
...  
Keyword(s):  
Indium Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
Mg Doped

Low resistance and highly reflective ohmic contacts top -type GaN using transparent interlayers for flip-chip light emitting diodes

2006 ◽  
Vol 3 (6) ◽  
pp. 2207-2210
Author(s):  
June-O Song ◽  
J. S. Kwak ◽  
Hyun-Gi Hong ◽  
Ian T. Ferguson ◽  
Tae-Yeon Seong
Keyword(s):  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Thermally Stable and Reflective RhZn/Ag Ohmic Contacts to p-type GaN for Near-UV Flip-chip Light-emitting Diodes

2011 ◽  
Vol 59 (1) ◽  
pp. 156-160 ◽  
Author(s):  
Seong-Han Park ◽  
Joon-Woo Jeon ◽  
Tae-Yeon Seong ◽  
Jeong-Tak Oh
Keyword(s):  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Thermally Stable ◽  
Light Emitting ◽  
P Type

scholarly journals Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts

2017 ◽  
Vol 25 (22) ◽  
pp. 26615 ◽  
Author(s):  
Shengjun Zhou ◽  
Xingtong Liu ◽  
Yilin Gao ◽  
Yingce Liu ◽  
Mengling Liu ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting

Nanoparticle Embedded p-Type Electrodes for GaN-Based Flip-Chip Light Emitting Diodes

2006 ◽  
Vol 6 (11) ◽  
pp. 3547-3550
Author(s):  
Joon Seop Kwak ◽  
J.-O. Song ◽  
T.-Y. Seong ◽  
B. I. Kim ◽  
J. Cho ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Ni Nanoparticles ◽  
Light Emitting ◽  
Specific Contact ◽  
Ag Contact ◽  
Multi Quantum Well

We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn–Ni nanoparticles/Ag schemes. The Zn–Ni nanoparticles/Ag contacts produce specific contact resistances of 10−5–10−6 Ωcm2 when annealed at temperatures of 330–530 °C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn–Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn–Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers.

Cu-doped indium oxide∕Ag ohmic contacts for high-power flip-chip light-emitting diodes

2005 ◽  
Vol 86 (6) ◽  
pp. 062103 ◽  
Author(s):  
June-O Song ◽  
Joon Seop Kwak ◽  
Tae-Yeon Seong
Keyword(s):  
Indium Oxide ◽  
High Power ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting
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