Low resistance and highly reflective ohmic contacts top -type GaN using transparent interlayers for flip-chip light emitting diodes

2006 ◽  
Vol 3 (6) ◽  
pp. 2207-2210
Author(s):  
June-O Song ◽  
J. S. Kwak ◽  
Hyun-Gi Hong ◽  
Ian T. Ferguson ◽  
Tae-Yeon Seong
Keyword(s):  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

2005 ◽  
Vol 8 (11) ◽  
pp. G320 ◽  
Author(s):  
Woong-Ki Hong ◽  
June-O Song ◽  
Hyun-Gi Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4990-4992 ◽  
Author(s):  
June-O Song ◽  
Dong-Seok Leem ◽  
J. S. Kwak ◽  
O. H. Nam ◽  
Y. Park ◽  
...  
Keyword(s):  
Solid Solution ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Low resistance and highly reflective Cu–Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes

2004 ◽  
Vol 201 (12) ◽  
pp. 2823-2826 ◽  
Author(s):  
Dong-Seok Leem ◽  
June-O. Song ◽  
J. S. Kwak ◽  
J. Cho ◽  
H. Kim ◽  
...  
Keyword(s):  
Solid Solution ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Low Resistance and Reflective Mg-Doped Indium Oxide–Ag Ohmic Contacts for Flip-Chip Light-Emitting Diodes

2004 ◽  
Vol 16 (6) ◽  
pp. 1450-1452 ◽  
Author(s):  
J.-O. Song ◽  
D.-S. Leem ◽  
J.S. Kwak ◽  
O.H. Nam ◽  
Y. Park ◽  
...  
Keyword(s):  
Indium Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
Mg Doped

Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

2012 ◽  
Vol 12 (1) ◽  
pp. 225-227 ◽  
Author(s):  
Joon-Woo Jeon ◽  
Sang Youl Lee ◽  
June O. Song ◽  
Tae-Yeon Seong
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes

2005 ◽  
Vol 86 (13) ◽  
pp. 133503 ◽  
Author(s):  
June-O Song ◽  
Woong-Ki Hong ◽  
Y. Park ◽  
J. S. Kwak ◽  
Tae-Yeon Seong
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes

2018 ◽  
Vol 7 (6) ◽  
pp. Q116-Q122 ◽  
Author(s):  
Xingtong Liu ◽  
Ning Li ◽  
Jinfeng Hu ◽  
Yinlin Gao ◽  
Ruiqing Wang ◽  
...  
Keyword(s):  
Comparative Study ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting

Low Resistance Indium-based Ohmic Contacts to N-face n-GaN for GaN-based Vertical Light Emitting Diodes

2010 ◽  
Vol 48 (5) ◽  
pp. 456-461
Author(s):  
Ki Man Kang ◽  
Min Joo Park ◽  
Joon Seop Kwak ◽  
Hyun Soo Kim ◽  
Kwang Woo Kwon ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

INTEGRATION OF N- AND P-CONTACTS TO GaN-BASED LIGHT EMITTING DIODES

2011 ◽  
Vol 20 (03) ◽  
pp. 521-525 ◽  
Author(s):  
WENTING HOU ◽  
THEERADETCH DETCHPROHM ◽  
CHRISTIAN WETZEL
Keyword(s):  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Voltage Drop ◽  
Light Emitting ◽  
Low Resistance ◽  
Electrical Devices ◽  
P Type ◽  
Lower Series ◽  
Post Deposition

Low-resistance Ohmic contacts are essential for the fabrication of electrical devices. While low contact resistance has been achieved to p -type layers or n -type layers separately, contacts are likely to degrade when both types need to be integrated into a single fabrication process, in particular when prior mesa etching is required. We present a solution to the problem, resulting in low-resistance Ohmic contacts on n -type GaN layers without post-deposition thermal anneal, while maintaining the quality of typical p -type contacts. We implement an integrated process for both, n - and p -contacts, involving an oxygen pretreatment to fabricate light emitting diodes with lower series resistance in the contacts and lower voltage drop at high current when compared to separately optimized contacts.

Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes

2010 ◽  
Vol 97 (9) ◽  
pp. 092103 ◽  
Author(s):  
Joon-Woo Jeon ◽  
Seong-Han Park ◽  
Se-Yeon Jung ◽  
Sang Youl Lee ◽  
Jihyung Moon ◽  
...  
Keyword(s):  
High Power ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance
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