Enhanced Optical Output Power of Blue Light-Emitting Diode Grown on Sapphire Substrate with Patterned Distributed Bragg Reflector

2018 ◽  
Vol 7 (4) ◽  
pp. Q66-Q69 ◽  
Author(s):  
Chu-Young Cho ◽  
Kyung-Ho Park ◽  
Seong-Ju Park
2014 ◽  
Vol 9 (1) ◽  
pp. 7 ◽  
Author(s):  
Yuanhao Jin ◽  
Qunqing Li ◽  
Guanhong Li ◽  
Mo Chen ◽  
Junku Liu ◽  
...  

2017 ◽  
Vol 54 (5) ◽  
pp. 052301
Author(s):  
郑元宇 Zheng Yuanyu ◽  
吴超瑜 Wu Chaoyu ◽  
林峰 Lin Feng ◽  
伍明跃 Wu Mingyue ◽  
周启伦 Zhou Qilun ◽  
...  

2011 ◽  
Vol 98 (5) ◽  
pp. 051106 ◽  
Author(s):  
Chu-Young Cho ◽  
Sang-Jun Lee ◽  
Jung-Hoon Song ◽  
Sang-Hyun Hong ◽  
Song-Mae Lee ◽  
...  

2020 ◽  
Vol 699 ◽  
pp. 137912 ◽  
Author(s):  
Takuya Kitabayashi ◽  
Teruyuki Asashita ◽  
Naoya Satoh ◽  
Takayuki Kiba ◽  
Midori Kawamura ◽  
...  

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 63
Author(s):  
Ching-Hua Chen ◽  
Jia-Jun Zhang ◽  
Chang-Han Wang ◽  
Tzu-Chieh Chou ◽  
Rui-Xiang Chan ◽  
...  

Ultraviolet (UV) light plays an important role in air/water/surface sterilization now. Maintaining a certain light intensity is often required to attain the targeted effect. In this paper, on-chip power monitoring of a UV-A light-emitting diode (LED) via sapphire substrate is reported. A p–i–n photodiode loop that surrounds the UV-A LED was designed and fabricated to monitor the output power by detecting the scattered light of the LED propagating through the sapphire substrate. No particular waveguide structure or processing parameter control was needed. The monitoring responsivities per unit of surface-emitting power obtained were approximately 21 and 25 mA/W at photodiode biases of 0 and 3 V, respectively. When combined with a transimpedance amplifier, a monitoring responsivity of 1.87 V/mW at zero bias was measured, and a different monitoring responsivity could be customized by adjusting the gain of the transimpedance amplifier. The operation principle of this device might be applicable to UV-B or UV-C LEDs.


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