Interfacial Properties of ALD-Deposited Al2O3/p-Type Germanium MOS Structures: Influence of Oxidized Ge Interfacial Layer Dependent on Al2O3 Thickness

2012 ◽  
Vol 1 (2) ◽  
pp. P32-P34 ◽  
Author(s):  
M. Botzakaki ◽  
A. Kerasidou ◽  
L. Sygellou ◽  
V. Ioannou-Sougleridis ◽  
N. Xanthopoulos ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Interfacial Properties ◽  
P Type ◽  
Mos Structures

Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process

2012 ◽  
Vol 711 ◽  
pp. 228-232
Author(s):  
Elias Al Alam ◽  
Ignasi Cortés ◽  
T. Begou ◽  
Antoine Goullet ◽  
Frederique Morancho ◽  
...  
Keyword(s):  
Surface Preparation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Plasma Oxidation ◽  
Interface Quality ◽  
Mos Capacitors ◽  
Dielectric Thin Film ◽  
P Type ◽  
Mos Structures ◽  
Uv Ozone

MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation and oxygen plasma oxidation, were compared in terms of resulting effective charge and interface trap density. A good SiO2/GaN interface quality was achieved for N-type MOS capacitances obtained both with continuousICPPECVD and ECR-PECVD deposition of the SiO2 dielectric. However, the interface quality is greatly reduced for MOS capacitors fabricated on P-type GaN.

Oxide interfacial layer in Au ohmic contacts to p-type ZnSe

1991 ◽  
Vol 115 (1-4) ◽  
pp. 683-686 ◽  
Author(s):  
K. Akimoto ◽  
T. Miyajima ◽  
H. Okuyama ◽  
Y. Mori
Keyword(s):  
Interfacial Layer ◽  
Ohmic Contacts ◽  
P Type

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs

2012 ◽  
Vol 717-720 ◽  
pp. 437-440 ◽  
Author(s):  
Christian Strenger ◽  
Volker Haeublein ◽  
Tobias Erlbacher ◽  
Anton J. Bauer ◽  
Heiner Ryssel ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Interfacial Layer ◽  
Chemical Properties ◽  
Microstructural Properties ◽  
Layer Formation ◽  
Carbon Distribution ◽  
Transmission Electron ◽  
Inversion Channel ◽  
P Type ◽  
And Chemical Properties

N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO2 interface were considered in relation with the measured Hall electron mobility.

Pinning Action of a Thin Ga Interfacial Layer in an Sb/Ga/GaAs Schottky Barrier Structure Grown by MBE

1984 ◽  
Vol 37 ◽  
Author(s):  
X.-J. Zhang ◽  
H. Cheng ◽  
A. G. Milnes
Keyword(s):  
Barrier Height ◽  
Interfacial Layer ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Energy Gap ◽  
Barrier Structure ◽  
Capacitance Measurements ◽  
Original Surface ◽  
Gaas Structure ◽  
P Type

AbstractThe pinning action on the barrier height of a Ga interfacial layer in an Sb/Ga/GaAs structure prepared by molecular beam epitaxy has been tracked as a function of Ga layer thicknesses for both n and p-GaAs (100). The barrier height ÆBn for n-type GaAs (ND=3×1015cm−3), determined by thermal activation measurements and capacitance measurements, changes from 0.8 to 1.0 eV as the Ga layer is increased from zero to three monolayers. The barrier height ÆBp for p-type GaAs decreases in a converse fashion so that the sum ÆBn + ÆBp is equal to the GaAs energy gap. Up to a Ga layer thickness of about one monolayer the barrier height changes are about linearly proportional to thickness.The action seen is compatible with barrier height changes that are seen when Sb/GaAs junctions are prepared with the original surface alternatively As or Ga rich and subjected to thermal annealing at temperatures up to 250°C.

The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer

2020 ◽  
Vol 95 (11) ◽  
pp. 115809
Author(s):  
Havva Elif Lapa ◽  
Ali Kökce ◽  
Durmuş Ali Aldemir ◽  
Ahmet Faruk Özdemir ◽  
Şemsettin Altındal
Keyword(s):  
Interfacial Layer ◽  
Interfacial Properties

Study and improvement of interfacial properties in a MIS structure based on p-type InP

Vacuum ◽  
2003 ◽  
Vol 72 (2) ◽  
pp. 123-127 ◽  
Author(s):  
M. Chellali ◽  
S. Tizi ◽  
Z. Benamara ◽  
M. Amrani ◽  
A. Boudissa ◽  
...  
Keyword(s):  
Interfacial Properties ◽  
Mis Structure ◽  
P Type

Reliability of Nitrided Oxides in N- and P-type 4H-SiC MOS Structures

2004 ◽  
Vol 815 ◽  
Author(s):  
Sumi Krishnaswami ◽  
Mrinal K. Das ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
Electric Field ◽  
Time To Failure ◽  
Positive Bias ◽  
Mos Capacitors ◽  
Accumulation Mode ◽  
Bias Stress ◽  
Structural Differences ◽  
P Type ◽  
Mos Structures ◽  
Mean Time

AbstractTDDB measurements of NMOS capacitor fabricated with 1200°C dry oxide with 1300°C N2O anneal were performed at 175°C and 300°C under high positive bias stress. The devices are biased into strong accumulation mode such that the field in the oxide is high enough to collect breakdown data in a reasonable period of time. We observe that at 175°C, a 100-year Mean Time to Failure (MTTF) is obtained at an electric field of 3 MV/cm in the oxide. The TDDB measurement has also been performed at 300°C where lifetime has been reduced by a few orders of magnitude, but with an acceptable 100-year MTTF. Recent reliability results on similarly oxidized MOSFETs have shown failures along the same trend as the n-type capacitors, indicating that MOSFETs and MOS capacitors can have similar reliability despite inherent processing and structural differences. PMOS capacitors fabricated with the aforementioned dry + N2O process as well as capacitors fabricated using the low DIT nitridation techniques show acceptable MTTF of 100 years at the nominal operating electric field of 3 MV/cm.

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