Effect of Hydrophobic Tail Length of Polysorbate Surfactants on Properties of Porous Silica Ultra-Low-k Films

2012 ◽  
Vol 2 (3) ◽  
pp. N61-N68 ◽  
Author(s):  
Ting-Yi Li ◽  
Chun-Hsien Yu ◽  
Hsin-Yan Lu ◽  
Ben-Zu Wan
Keyword(s):  
Porous Silica ◽  
Tail Length ◽  
Hydrophobic Tail ◽  
Low K

Study of Porous Silica Based Films as Low-k Dielectric Material and their Interface with Copper Metallization

2002 ◽  
Vol 716 ◽  
Author(s):  
Ilanit Fisher ◽  
Wayne D. Kaplan ◽  
Moshe Eizenberg ◽  
Michael Nault ◽  
Timothy Weidman
Keyword(s):  
Integrated Circuits ◽  
Dielectric Material ◽  
Hydrogen Plasma ◽  
Porous Silica ◽  
Film Deposition ◽  
Copper Metallization ◽  
High Porosity ◽  
Tem Analysis ◽  
Chip Technology ◽  
Low K

AbstractThe success of future gigascale integrated circuits (IC) chip technology depends critically upon the reduction of the interconnects RC delay time. This calls for the development of new low dielectric constant (low-k) insulators, and for work on their integration with lower resistivity copper metallization.A porous silica based film prepared by surfactant templated self-assembly spin-on deposition (SOD) is an attractive candidate as a low-k material. In this research we have studied the structure, chemical composition and bonding of the film and its interface with copper metallization. The decomposition and vaporization of the surfactant in the last step of film deposition resulted in a film with an amorphous structure, as determined by XRD and TEM analysis. Its high porosity (35-58%) was confirmed by XRR and RBS measurements. XPS analysis of the Si2p transition indicated three types of bonding: Si-O, O-Si-C and Si-C. The bonding characteristics were also investigated by FTIR analysis. The effect of a hydrogen plasma post-treatment process on the film topography and bonding was determined by AFM and XPS, respectively. It was found that direct H2 plasma exposure significantly affected the surface roughness of the film and type of chemical bonding. The structure and properties of various PECVD deposited capping layers were also studied, as was the interface between the porous dielectric and Ta, TaxN and Cu (PVD deposited films) after annealing at 200-700°C in vacuum environment for 30 min. At temperatures up to 500°C, no significant diffusion of Cu or Ta into the porous film was detected, as determined by RBS. No copper penetration was detected up to 700°C, according to AES and SIMS analysis. However, at 700°C copper dewetting occurred when it was deposited directly on the porous silica based film.

Hydrophobic tail length in spin crossover active iron(ii) complexes predictably tunes T½ in solution and enables surface immobilisation

2020 ◽  
Vol 7 (10) ◽  
pp. 2050-2059
Author(s):  
Sriram Sundaresan ◽  
Jonathan A. Kitchen ◽  
Sally Brooker
Keyword(s):  
Spin State ◽  
Linear Correlation ◽  
Convenient Method ◽  
Spin Crossover ◽  
Tail Length ◽  
Active Iron ◽  
Hydrophobic Tail ◽  
Switching Temperature ◽  
Alkyl Tail

Linear correlation of the hydrophobic alkyl tail length R employed in [FeII(LH-OR)(NCBH3)2] with the spin crossover switching temperature is a very convenient method of predictably tuning the iron(ii) spin state.

Adsorption in-situ Spectroscopic Ellipsometry Analysis of Disordered Porous Silica Low-k Films

2005 ◽  
Author(s):  
Xianying Li ◽  
Nobutoshi Fujii ◽  
Nobuhiro Hata ◽  
Takamaro Kikkawa
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Porous Silica ◽  
Low K

Vapor Phase Silylation Hardening Process for Porous Silica Low-k Films

2008 ◽  
Author(s):  
Y. Nakata ◽  
Y. Kayaba ◽  
T. Hirota ◽  
T. Kikkawa
Keyword(s):  
Vapor Phase ◽  
Porous Silica ◽  
Hardening Process ◽  
Low K

scholarly journals Probing diffusion barrier integrity on porous silica low-k thin films using positron annihilation lifetime spectroscopy

2001 ◽  
Vol 89 (9) ◽  
pp. 5138-5144 ◽  
Author(s):  
Jia-Ning Sun ◽  
David W. Gidley ◽  
Terry L. Dull ◽  
William E. Frieze ◽  
Albert F. Yee ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Annihilation ◽  
Diffusion Barrier ◽  
Porous Silica ◽  
Positron Annihilation Lifetime Spectroscopy ◽  
Barrier Integrity ◽  
Positron Annihilation Lifetime ◽  
Low K

Young’s modulus evaluation by SAWs for porous silica low-k film with cesium doping

2011 ◽  
Vol 88 (5) ◽  
pp. 666-670 ◽  
Author(s):  
X. Xiao ◽  
X.M. Shan ◽  
Y. Kayaba ◽  
K. Kohmura ◽  
H. Tanaka ◽  
...  
Keyword(s):  
Young’S Modulus ◽  
Young's Modulus ◽  
Porous Silica ◽  
Low K

Electrical reliabilities of porous silica low-k films

2011 ◽  
Author(s):  
Takamaro Kikkawa ◽  
Yasuhisa Kayaba ◽  
Kazuo Kohmura ◽  
Shinichi Chikaki
Keyword(s):  
Porous Silica ◽  
Low K
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