Communication—Fluorinated Plasma Treatments Using PTFE Substrates for Room-Temperature Silicon Wafer Direct Bonding

2016 ◽  
Vol 5 (7) ◽  
pp. P393-P395 ◽  
Author(s):  
Chenxi Wang ◽  
Tadatomo Suga
Keyword(s):  
Silicon Wafer ◽  
Room Temperature ◽  
Plasma Treatments ◽  
Wafer Direct Bonding

Chemical Free Room Temperature Wafer To Wafer Direct Bonding

1995 ◽  
Vol 142 (11) ◽  
pp. 3949-3955 ◽  
Author(s):  
Shari N. Farrens ◽  
James R. Dekker ◽  
Jason K. Smith ◽  
Brian E. Roberds
Keyword(s):  
Room Temperature ◽  
Wafer Direct Bonding

A dielectrically isolated photodiode array by silicon-wafer direct bonding

1987 ◽  
Vol 8 (10) ◽  
pp. 454-456 ◽  
Author(s):  
J. Ohura ◽  
T. Tsukakoshi ◽  
K. Fukuda ◽  
M. Shimbo ◽  
H. Ohashi
Keyword(s):  
Silicon Wafer ◽  
Photodiode Array ◽  
Wafer Direct Bonding

scholarly journals Internal Friction and Young's Modulus Measurements on SiO2 and Ta2O5 Films Done with an Ultra-High Q Silicon-Wafer Suspension

2015 ◽  
Vol 60 (1) ◽  
pp. 365-370 ◽  
Author(s):  
M. Granata ◽  
L. Balzarini ◽  
J. Degallaix ◽  
V. Dolique ◽  
R. Flaminio ◽  
...  
Keyword(s):  
Thin Films ◽  
Internal Friction ◽  
Silicon Wafer ◽  
Room Temperature ◽  
Suspension System ◽  
Cryogenic Temperatures ◽  
Resonant Frequencies ◽  
High Q ◽  
Key Features ◽  
Q Factors

Abstract In order to study the internal friction of thin films a nodal suspension system called GeNS (Gentle Nodal Suspension) has been developed. The key features of this system are: i) the possibility to use substrates easily available like silicon wafers; ii) extremely low excess losses coming from the suspension system which allows to measure Q factors in excess of 2×108 on 3” diameter wafers; iii) reproducibility of measurements within few percent on mechanical losses and 0.01% on resonant frequencies; iv) absence of clamping; v) the capability to operate at cryogenic temperatures. Measurements at cryogenic temperatures on SiO2 and at room temperature only on Ta2O5 films deposited on silicon are presented.

Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method

1997 ◽  
Vol 117-118 ◽  
pp. 808-812 ◽  
Author(s):  
Taek Ryong Chung ◽  
Liu Yang ◽  
Naoe Hosoda ◽  
Hidegi Takagi ◽  
Tadatomo Suga
Keyword(s):  
Room Temperature ◽  
Compound Semiconductors ◽  
Bonding Method ◽  
Wafer Direct Bonding

Modification of SiO through room-temperature plasma treatments, rapid thermal annealings, and laser irradiation in a nonoxidizing atmosphere

1988 ◽  
Vol 37 (11) ◽  
pp. 6468-6477 ◽  
Author(s):  
F. Rochet ◽  
G. Dufour ◽  
H. Roulet ◽  
B. Pelloie ◽  
J. Perrière ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Room Temperature ◽  
Temperature Plasma ◽  
Plasma Treatments
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