Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

2013 ◽  
Vol 2 (4) ◽  
pp. P134-P137 ◽  
Author(s):  
F. Gencarelli ◽  
B. Vincent ◽  
J. Demeulemeester ◽  
A. Vantomme ◽  
A. Moussa ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Relaxation Mechanism

scholarly journals Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

2000 ◽  
Vol 76 (24) ◽  
pp. 3552-3554 ◽  
Author(s):  
H. Trinkaus ◽  
B. Holländer ◽  
St. Rongen ◽  
S. Mantl ◽  
H.-J. Herzog ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Relaxation Mechanism

Accurate Lattice Constant and Mismatch Measurements of SiC Heterostructures by X-Ray Multiple-Order Reflections

2002 ◽  
Vol 742 ◽  
Author(s):  
XianRong Huang ◽  
Michael Dudley ◽  
Philip G. Neudeck ◽  
J. Anthony Powell
Keyword(s):  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Relaxation Mechanism ◽  
X Ray Diffraction ◽  
Crystalline Perfection ◽  
Coherent Interface ◽  
Rocking Curve ◽  
X Ray ◽  
Lattice Planes ◽  
Atomically Flat

ABSTRACTHigh-resolution X-ray diffraction (HRXRD) combined with other diffraction techniques is applied to characterize 3C SiC epilayers hoteroepitaxially grown on atomically flat mesas on 4H and 6H SiC substrates. Small-beam rocking curve scan and reciprocal mapping show extremely high crystalline perfection and homogeneity of the ideally grown 3C-SiC epilayers. Accurate lattice measurements based on X-ray multiple-order reflections reveal that: 1) no misorientation between the (0001) lattice planes across the 4H/3C or 6H/3C interface is detected, confirming the 2D nucleation mechanism of the 3C epilayer from a flat coherent interface; 2) in-plane substrate/epilayer lattice mismatch always exists, but the 3C epilayers do not correspond to a completely relaxed cubic structure, indicating that the epilayers are partially strained; 3) lattice mismatch varies for different regions, implying a complicated strain relaxation mechanism of 3C epilayers on various mesas.

Carbon segregation as a strain relaxation mechanism in thin germanium-carbon layers deposited directly on silicon

2006 ◽  
Vol 100 (4) ◽  
pp. 044323 ◽  
Author(s):  
D. I. Garcia-Gutierrez ◽  
M. José-Yacamán ◽  
Shifeng Lu ◽  
D. Q. Kelly ◽  
S. K. Banerjee
Keyword(s):  
Strain Relaxation ◽  
Relaxation Mechanism ◽  
Carbon Segregation

A Model for Lattice-Mismatched Epitaxy: A Continuum View

1992 ◽  
Vol 280 ◽  
Author(s):  
B. G. Orr ◽  
C. W. Snyder
Keyword(s):  
Surface Diffusion ◽  
Strain Relaxation ◽  
Relaxation Mechanism ◽  
High Energy ◽  
Growth Mode ◽  
Scanning Tunneling ◽  
Physical Factors ◽  
Diffusion Kinetics ◽  
Tunneling Microscopy ◽  
Lattice Mismatched Epitaxy

To date, primarily only idealized equilibrium models for the growth mode and strain relaxation of elastically strained overlayers have been proposed. Here we present a general continuum model for lattice-mismatched epitaxy. As molecular beam epitaxy is inherently a nonequilibrium growth process, surface diffusion kinetics is incorporated in the model. Additionally, a new strain relaxation mechanism in a dislocation-free film is considered. Experimental support for our view is obtained from measurements made by reflection high energy electron diffraction, scanning tunneling microscopy, and transmission electron microscopy on the growth of InGaAs on GaAs(100). These results demonstrate the strong effects which strain, surface diffusion kinetics, and surface energy have on growth mode. From analytical and numerical analysis in 1 + 1 dimensions, the interrelationship of such physical factors is revealed. Our improved understanding enables control over the growth behavior of strained-layer superlattices and heterostructures.

Investigation of strain relaxation mechanism in small SiGe clusters

2007 ◽  
Vol 244 (10) ◽  
pp. 3601-3611 ◽  
Author(s):  
L. R. Marim ◽  
L. T. Ueno ◽  
F. B. C. Machado ◽  
A. Dal Pino
Keyword(s):  
Strain Relaxation ◽  
Relaxation Mechanism

In Situ Synchrotron Measurements of Oxide Growth Strains

2005 ◽  
Vol 490-491 ◽  
pp. 287-293 ◽  
Author(s):  
Jonathan Almer ◽  
Geoffrey A. Swift ◽  
John A. Nychka ◽  
Ersan Üstündag ◽  
David R. Clarke
Keyword(s):  
Strain Relaxation ◽  
Relaxation Mechanism ◽  
High Energy ◽  
Oxide Growth ◽  
X Rays ◽  
Pure Alumina ◽  
Transmission Geometry ◽  
Residual Strains

Synchrotron x-rays are used for in situ determination of oxide strain, during oxide formation on a Kanthal A1 FeCrAlZr substrate at 1160°C. The measurements rely on use of high-energy (~80keV) x-rays and transmission geometry, and the methodology of the strain measurements is presented. Oxide growth strains at elevated temperature, relative to pure alumina, were seen to be small, while temperature excursions induced significant strains. Furthermore, significant strain relaxation was observed during isothermal holds, suggesting oxide creep as a major relaxation mechanism. Upon cooling to room temperature, significant residual strains developed, with a corresponding in-plane residual stress of -3.7 GPa.

Strain Relaxation at Low Misfits: Dislocation Injection vs. Surface Roughening

1995 ◽  
Vol 399 ◽  
Author(s):  
D.D. Perovic ◽  
B. Bahierathan ◽  
D.C. Houghton ◽  
H. Lafontaine ◽  
J.-M. Baribeau
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Relaxation Mechanism ◽  
Theoretical Description ◽  
Dislocation Nucleation ◽  
Surface Roughening ◽  
X Ray Diffraction ◽  
Dislocation Generation ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTTwo competing strain relaxation mechanisms, namely misfit dislocation generation and surface roughening, have been extensively studied using the GexSi1-x/Si (x< 0.5) system as an example. A predictive model has been developed which accurately describes the nature of misfit dislocation nucleation and growth under non-equilibrium conditions. Using optical and electron microscopy, coupled with a refined theoretical description of dislocation nucleation, it is shown that strain relieving dislocations are readily generated at low misfits with a characteristic activation energy barrier regardless of the growth technique employed (i.e. MBE, RTCVD and UHVCVD). Secondly we have studied the alternative elastic strain relaxation mechanism involving surface undulation; x-ray diffraction, electron and atomic force microscopy have been used to characterize GexSi1-x/Si (x<0.5) structures grown by UHVCVD and MBE at relatively higher temperatures. A theoretical model has been used to model the critical thickness for surface wave generation. The conditions governing the interplay between dislocation formation and surface buckling are described in terms of a "morphological instability diagram".

scholarly journals Reorientation of Misfit Dislocations During Annealing in InGaAs/GaAs(001) Interfaces

1993 ◽  
Vol 308 ◽  
Author(s):  
Y. Chen ◽  
Z. Liliental-Weber ◽  
J. Washburn ◽  
J.F. Klem ◽  
J.Y. Tsao
Keyword(s):  
Strain Relaxation ◽  
Dislocation Line ◽  
Line Tension ◽  
Misfit Strain ◽  
Relaxation Mechanism ◽  
Misfit Dislocations ◽  
Burgers Vector ◽  
Transmission Electron ◽  
Edge Component ◽  
Interfacial Plane

ABSTRACTTransmission electron microscopy is applied to investigate the effect of post-annealing on misfit dislocations in an In0.2Ga0.8As/GaAs(001) heterostructure. An orthogonal array of 60º dislocations along [110] and [110] directions was observed in the interfaces of the samples grown by MBE at 520 ºC. When the as-grown samples were annealed at temperatures ranging from 600 to 800 ºC, the 60º dislocations were gradually reoriented by dislocation reactions occurring at the 90º intersections followed by nonconservative motion driven by dislocation line tension and the residual elastic misfit strain. The final result of this process was a dislocation array lying along [100] and [010] directions. The reoriented u=<100> dislocation has a Burgers vector , which is the same as that of 60º dislocation, but the edge component of its Burgers vector in the (001) interfacial plane is larger than that of 60º dislocation by a factor of , resulting in a greater contribution to elastic strain relaxation. This nonconservative reorientation of 60º dislocations to form the u=<100> dislocations represents a new strain relaxation mechanism in diamond or zinc blende semiconductor heterostructures.

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