Non-Isothermal Modeling of Dark Current-Voltage Measurements of a CIGS Solar Cell

2018 ◽  
Vol 7 (2) ◽  
pp. P50-P54 ◽  
Author(s):  
Ana Obradović ◽  
Kenneth Toch ◽  
Bert Coppens ◽  
Samira Khelifi ◽  
Johan Lauwaert ◽  
...  
Keyword(s):  
Solar Cell ◽  
Dark Current ◽  
Cigs Solar Cell ◽  
Current Voltage

Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell

2014 ◽  
Vol 48 (5) ◽  
pp. 653-658 ◽  
Author(s):  
M. A. Mintairov ◽  
V. V. Evstropov ◽  
N. A. Kalyuzhnyy ◽  
S. A. Mintairov ◽  
M. Z. Shvarts ◽  
...  
Keyword(s):  
Solar Cell ◽  
Dark Current ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Junction Solar Cell ◽  
Current Voltage

scholarly journals Effect of the Incoherent Encapsulation Layer and Oblique Sunlight Incidence on the Optical and Current-Voltage Characteristics of Surface-Textured Cu(In,Ga)Se2 Solar Cells Based on the Angle-Dependent Equispaced Thickness Averaging Method

2021 ◽  
Vol 11 (5) ◽  
pp. 2121
Author(s):  
Gyeongjun Lee ◽  
Jiyong Kim ◽  
Sungchul Kim ◽  
Jungho Kim
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Averaging Method ◽  
Ethylene Vinyl Acetate ◽  
Glass Layer ◽  
Cover Glass ◽  
Cigs Solar Cell ◽  
Current Voltage ◽  
Calculation Results ◽  
Cigs Solar Cells

In general, the optical and electrical characteristics of Cu(In,Ga)Se2 (CIGS) solar cells have been studied under the condition that sunlight is normally incident from the air to the CIGS solar cell having no thick front encapsulation layers. To obtain the calculation results in a realistic module application, we calculate the optical and current–voltage (J–V) characteristics of surface-textured CIGS solar cells by simultaneously considering the thick front encapsulation layers and oblique sunlight incidence. Using the proposed angle-dependent equispaced thickness averaging method (ADETAM), we incoherently model two successive front encapsulation layers of a cover glass layer and an ethylene vinyl acetate (EVA) layer, whose respective thicknesses are greater than the coherence length of sunlight (~0.6 μm). The angular dependences of reflectance spectrum and J–V curves are calculated and compared in a surface-textured CIGS solar cell with and without the inclusion of the two front encapsulation layers. We show that the optical absorption improvement of the surface-textured CIGS solar cell over the planar CIGS solar cell can be over-predicted when the thick front encapsulation layers are not considered in the optical modeling.

scholarly journals Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

2016 ◽  
Vol 67 (5) ◽  
pp. 377-382 ◽  
Author(s):  
Arpád Kósa ◽  
Miroslav Mikolášek ◽  
Ľubica Stuchlíková ◽  
Ladislav Harmatha ◽  
Wojciech Dawidowski ◽  
...  
Keyword(s):  
Solar Cell ◽  
Dark Current ◽  
Open Circuit Voltage ◽  
Deep Level ◽  
Open Circuit ◽  
Electrophysical Properties ◽  
Fourier Spectroscopy ◽  
Defect States ◽  
Current Voltage ◽  
Sun Light

AbstractThis paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (I–V) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined fromI–Vmeasurement at 1 and 20× sun light concentrations. Three electron like defects TAn1, TAn2, TDnand one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.

ELECTRICAL PROPERTIES OF P3HT (POLY [3-HEXYLTHIOPHENE])/n-TYPE CRYSTALLINE SILICON (n-c-Si) SOLAR CELLS

2011 ◽  
Vol 20 (04) ◽  
pp. 749-773 ◽  
Author(s):  
JAIRO C. NOLASCO ◽  
ALEJANDRA CASTRO-CARRANZA ◽  
BENJAMÍN IÑIGUEZ ◽  
JOSEP PALLARÈS ◽  
MAGALI ESTRADA
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Space Charge ◽  
Silicon Substrate ◽  
Dark Current ◽  
Crystalline Silicon ◽  
Space Charge Limited Current ◽  
Si Solar Cells ◽  
Current Voltage

Au / P 3 HT (poly [3-hexylthiophene])/n-type crystalline silicon ( n - c - Si ) solar cells have been fabricated. The Aluminum back contact is obtained by evaporation on silicon substrate. An 80 nm P 3 HT layer thick was spin-coated on silicon substrate followed by thermal annealing. Finally golden contacts are deposited by sputtering. The best characteristics of this flawed solar cell are: V oc =0.47 V , I sc =7.42 mA / cm 2 and an efficiency of 1.29%. The area of this device is 0.07 cm2. In order to get a deep understanding of the electrical properties of the heterojunction, capacitance-voltage and current-voltage-temperature measurements have been made. A compact electrical equivalent circuit has been used to describe the dark current-voltage characteristics. It is based on the combination of two exponential mechanisms, shunt and series resistances and space-charge limited current terms. From the temperature dependence of the extracted parameters we can obtain the limiting conduction mechanism. We found that the polymeric layer limits the current not only at low voltages, through Multi-Tunneling Capture Emission, but also at high voltages, through series resistance and Space-Charge Limited Current. On the other hand, the Silicon wafer limits the current at medium voltages, through the diffusion mechanism. In addition, the model is useful to estimate the open circuit voltage and built in voltage of the solar cell using only dark current voltage measurements.

Simulation and modeling of the influence of temperature on CdS/CdTe thin film solar cell

2019 ◽  
Vol 87 (3) ◽  
pp. 30101 ◽  
Author(s):  
Abdel-baset H. Mekky
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Influence Of Temperature ◽  
Cdte Solar Cell ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Influence Of Temperature On

Semiconductor materials cadmium sulfide (CdS) and cadmium telluride (CdTe) are employed in the fabrication of thin film solar cells of relatively excessive power conversion efficiency and low producing price. Simulations of thin film CdS/CdTe solar cell were carried out using SCAPS-1D. The influence of temperature field on the variation of CdTe solar cell parameters such as current–voltage, capacitance–voltage characteristics and the external quantum efficiency was investigated theoretically. For use temperatures, one obtains the external quantum efficiency has the same profiles. However, the effect of the temperature on the Mott-Schottky curves is slightly noted by variations on the characteristics. This conclusion can be used by solar cell manufacturers to improve the solar cell parameters with the biggest possible gain in device performance.

Comparative Study of Copper Indium Gallium Selenide (CIGS) Solar Cell With Other Solar Technologies

2021 ◽  
Author(s):  
Isabela C. B. ◽  
Ricardo Lameirinhas ◽  
Carlos A. F. Fernandes ◽  
João Paulo N. Torres
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Comparative Study ◽  
Crystalline Silicon ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Cigs Solar Cell ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium

Thin-film modules are emerging in the photovoltaic market, due to their competitive cost with the traditional crystalline silicon modules. The thin-film cells CuIn(1-x)Ga(x)Se2 (Copper Indium Gallium Selenide - CIGS) are...

Materials Optimization for thin-film copper indium gallium selenide (CIGS) solar cell based on distributed braggs reflector

Optik ◽  
2020 ◽  
pp. 165987
Author(s):  
Waqas Farooq ◽  
Thamraa Alshahrani ◽  
Syed Asfandyar Ali Kazmi ◽  
Javed Iqbal ◽  
Hassnain Abbas Khan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Gallium Selenide ◽  
Copper Indium Gallium Selenide ◽  
Cigs Solar Cell ◽  
Copper Indium ◽  
Indium Gallium ◽  
Copper Indium Gallium
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