Deep Level Studies in High-Resistive Gallium Phosphide Single Crystals

2015 ◽  
Vol 5 (4) ◽  
pp. P3059-P3063 ◽  
Author(s):  
Sandip Das ◽  
Sandeep K. Chaudhuri ◽  
Krishna C. Mandal
Keyword(s):  
Single Crystals ◽  
Gallium Phosphide ◽  
Deep Level

LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-233-C4-241
Author(s):  
B. Hamilton ◽  
A. R. Peaker ◽  
D. R. Wight
Keyword(s):  
Gallium Phosphide ◽  
Deep Level

Reflection spectra of impurity-containing gallium phosphide single crystals

1979 ◽  
Vol 30 (4) ◽  
pp. 522-523
Author(s):  
V. V. Sobolev ◽  
V. I. Donetskikh ◽  
E. F. Zagainov
Keyword(s):  
Single Crystals ◽  
Gallium Phosphide ◽  
Reflection Spectra

Behaviour of Implanted Hydrogen in Gallium Phosphide Single Crystals

1988 ◽  
Vol 144 ◽  
Author(s):  
J. M. Zavada ◽  
R. G. Wilson ◽  
S. W. Novak ◽  
S. J. Pearton ◽  
A. R. Von Neida
Keyword(s):  
Mass Spectrometry ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Gallium Phosphide ◽  
Secondary Ion Mass Spectrometry ◽  
Furnace Annealing ◽  
Higher Temperature ◽  
Redistribution Of Hydrogen ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTIn this paper we report on the depth distributions of implanted hydrogen in GaP crystals and the subsequent changes produced by post- implantation furnace annealing. A sulfur doped n+ GaP wafer has been implanted with 333 keV protons to a fluence of 5E15/cm+2. A similar wafer was implanted with 350 keV deuterons to the same fluence. Portions of each wafer have been furnace annealed at temperatures up to 500°C. The implanted hydrogen and the dopant S atoms were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the redistribution of hydrogen begins with annealing at about 300°C and proceeds both towards the surface and deeper into the substrate. The overall behavior is similar to that found previously for hydrogen in GaAs. However, in GaP crystals this redistribution begins at a higher temperature and proceeds more slowly in the implanted region. Based on the SIMS profiles, diffusion coefficients for hydrogen migrating into substrate are obtained.

Impurity-Induced Defect States in Pb1−xGexTe Alloys Doped With Gallium

1999 ◽  
Vol 607 ◽  
Author(s):  
E.P. Skipetrov ◽  
E.A. Zvereva ◽  
V.V. Belousov ◽  
L.A. Skipetrova
Keyword(s):  
Low Temperature ◽  
Heat Source ◽  
Single Crystals ◽  
Deep Level ◽  
Persistent Photoconductivity ◽  
Background Illumination ◽  
Defect States ◽  
Galvanomagnetic Properties ◽  
Controlled Illumination ◽  
Temperature Activation

AbstractGalvanomagnetic properties of n-Pb1−xGexTe<Ga>(O.04≤x≤O.08) single crystals have been investigated in the shielded from external background illumination chamber and under controlled illumination from infrared heat source. Low temperature activation range of the impurity conductivity on the dark curves of ρ(l/T) was revealed and attributed to the appearance of gallium-induced deep level EGa in the gap of the alloys. It was shown that the alloys possess high infrared photosensitivity at temperatures below Tc=50%60 K, and effect of the persistent photoconductivity at helium temperatures was revealed.

Shallow donors and deep level color centers in AlN single crystals: EPR, ODMR and optical studies

2011 ◽  
Vol 9 (3-4) ◽  
pp. 745-748 ◽  
Author(s):  
V. A. Soltamov ◽  
I. V. Ilyin ◽  
A. A. Soltamova ◽  
D. O. Tolmachev ◽  
N. G. Romanov ◽  
...  
Keyword(s):  
Single Crystals ◽  
Deep Level ◽  
Color Centers ◽  
Optical Studies ◽  
Shallow Donors

Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of Deep Centers in CdTe Single Crystals

1988 ◽  
Vol 27 (Part 1, No. 12) ◽  
pp. 2256-2259 ◽  
Author(s):  
Jun Morimoto ◽  
Michihiro Fudamoto ◽  
Shuuji Tashiro ◽  
Masaaki Arai ◽  
Toru Miyakawa ◽  
...  
Keyword(s):  
Spectral Analysis ◽  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Centers ◽  
Transient Spectroscopy

Electrical Characterization of N+-implanted n-type ZnO Single Crystals: p-n Homojunction and Deep Level Defects

2007 ◽  
Vol 1035 ◽  
Author(s):  
Qilin Gu ◽  
Xuemin Dai ◽  
Chi-Chung Ling ◽  
Shijie Xu ◽  
Liwu Lu ◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermal Evolution ◽  
Deep Level ◽  
Schottky Diodes ◽  
Control Sample ◽  
Electrical Characterization ◽  
Type Layer ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Induced Defects

AbstractUnintentionally doped n-type ZnO single crystals were implanted by nitrogen ions with different fluences of 1013, 1014 and 1015 cm−2 respectively. ZnO p-n homojunction was successfully fabricated due to the formation of p-type layer after 650°C post-implantation annealing in air for 30 minutes. Further thermal evolution of deep level defects was studied through thermal annealing up to 1200°C. Electrical characterization techniques including current-voltage (I-V), capacitance-voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and double-correlation DLTS (DDLTS) were used for investigating the control sample, all the as-implanted and annealed samples through Au/n-ZnO Schottky diodes as well as ZnO p-n junctions. Detailed electrical properties of fabricated devices and characteristics of implantation induced defects were analyzed based on plentiful DLTS spectra. Moreover, low-temperature photoluminescence experiments of all the as-implanted and annealed samples were performed and the correlation between results from electrical and optical characterizations was discussed.

Sol-Gel Silicon Carbide for Photonic Applications

2006 ◽  
Vol 527-529 ◽  
pp. 759-762 ◽  
Author(s):  
B. Friedel ◽  
Siegmund Greulich-Weber
Keyword(s):  
Single Crystals ◽  
Deep Level ◽  
Sol Gel ◽  
Photonic Bandgap Materials ◽  
Sol Gel Process ◽  
Annealing Procedure ◽  
Gel Preparation ◽  
Amorphous Sic ◽  
Porous Sic ◽  
Controlled Doping

We have investigated the growth of SiC, following a modified sol-gel process, which not only allows the realization of 3D photonic bandgap materials but also is useful for various SiC applications like templates in medicine or filters in harsh environment. Depending on the sol-gel annealing procedure one obtains macro-porous SiC, amorphous SiC, or from nano to micrometer-sized 3C-SiC single crystals. At low annealing temperatures preferably nanowires are grown. Via various sol-gel-annealing procedures we are able to prepare single crystals with sizes ranging from several nm up to several 100 %m, while the resulting polytype only depends on the annealing temperature available. Not only for photonic applications useable procedures for doping with shallow level donors and acceptors as well as with deep level defects are essential. We show that controlled doping is possible either during the sol-gel preparation or via the gas phase during the following annealing procedure.

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