Reflection spectra of impurity-containing gallium phosphide single crystals

1979 ◽  
Vol 30 (4) ◽  
pp. 522-523
Author(s):  
V. V. Sobolev ◽  
V. I. Donetskikh ◽  
E. F. Zagainov
Keyword(s):  
Single Crystals ◽  
Gallium Phosphide ◽  
Reflection Spectra

scholarly journals Features of IR reflection spectra of β-Tl1-xCuxInS2 single crystals (0 ≤ X ≤ 0.015)

2021 ◽  
Vol 1753 (1) ◽  
pp. 012077
Author(s):  
A Kh Matiyev ◽  
R T Uspazhiev ◽  
A M Gachaev ◽  
I A Sysoev ◽  
B M Khamkhoev ◽  
...  
Keyword(s):  
Single Crystals ◽  
Reflection Spectra ◽  
Ir Reflection ◽  
Ir Reflection Spectra

Isotopic disorder effect in the infrared reflection spectra of 6Lix7Li1−xY F4 single crystals

2007 ◽  
Vol 142 (5) ◽  
pp. 256-260
Author(s):  
E.A. Vinogradov ◽  
V.A. Yakovlev ◽  
N.N. Novikova ◽  
M.N. Popova ◽  
S.K. Saikin ◽  
...  
Keyword(s):  
Single Crystals ◽  
Reflection Spectra ◽  
Infrared Reflection ◽  
Disorder Effect

Structure dependence of reflection spectra of TiO2 single crystals

1998 ◽  
Vol 92 (1-3) ◽  
pp. 247-250 ◽  
Author(s):  
T. Sekiya ◽  
M. Igarashi ◽  
S. Kurita ◽  
S. Takekawa ◽  
M. Fujisawa
Keyword(s):  
Single Crystals ◽  
Reflection Spectra ◽  
Structure Dependence

Behaviour of Implanted Hydrogen in Gallium Phosphide Single Crystals

1988 ◽  
Vol 144 ◽  
Author(s):  
J. M. Zavada ◽  
R. G. Wilson ◽  
S. W. Novak ◽  
S. J. Pearton ◽  
A. R. Von Neida
Keyword(s):  
Mass Spectrometry ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Gallium Phosphide ◽  
Secondary Ion Mass Spectrometry ◽  
Furnace Annealing ◽  
Higher Temperature ◽  
Redistribution Of Hydrogen ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTIn this paper we report on the depth distributions of implanted hydrogen in GaP crystals and the subsequent changes produced by post- implantation furnace annealing. A sulfur doped n+ GaP wafer has been implanted with 333 keV protons to a fluence of 5E15/cm+2. A similar wafer was implanted with 350 keV deuterons to the same fluence. Portions of each wafer have been furnace annealed at temperatures up to 500°C. The implanted hydrogen and the dopant S atoms were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the redistribution of hydrogen begins with annealing at about 300°C and proceeds both towards the surface and deeper into the substrate. The overall behavior is similar to that found previously for hydrogen in GaAs. However, in GaP crystals this redistribution begins at a higher temperature and proceeds more slowly in the implanted region. Based on the SIMS profiles, diffusion coefficients for hydrogen migrating into substrate are obtained.

scholarly journals Low-temperature Reflection Spectra of the Single Crystals of TCNQ Complex Salts

1981 ◽  
Vol 54 (2) ◽  
pp. 348-357 ◽  
Author(s):  
Kyuya Yakushi ◽  
Masaaki Iguchi ◽  
Gen Katagiri ◽  
Takahisa Kusaka ◽  
Toshiaki Ohta ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Reflection Spectra ◽  
Complex Salts

Quasi-metallic reflection spectra of TCNQ single crystals

1976 ◽  
Vol 12 (1) ◽  
pp. 89-105 ◽  
Author(s):  
R.R. Pennelly ◽  
C.J. Eckhardt
Keyword(s):  
Single Crystals ◽  
Reflection Spectra

Far-infrared reflection spectra of CdInGaS4 single crystals

1979 ◽  
Vol 94 (1) ◽  
pp. K31-K34 ◽  
Author(s):  
K. R. Allakhverdiev ◽  
A. N. Abbasov ◽  
T. R. Mekhtiev ◽  
R. Kh. Nani
Keyword(s):  
Single Crystals ◽  
Far Infrared ◽  
Reflection Spectra ◽  
Infrared Reflection

Reflection spectra of single crystals of copper phthalocyanine of the β-modification

1980 ◽  
Vol 61 (2) ◽  
pp. K163-K165 ◽  
Author(s):  
M. V. Kurik ◽  
C. Hamann ◽  
M. Starke ◽  
L. I. Tsikora
Keyword(s):  
Single Crystals ◽  
Copper Phthalocyanine ◽  
Reflection Spectra

Far-Infrared Reflection Spectra of CsCl Single Crystals

1975 ◽  
Vol 39 (2) ◽  
pp. 448-450 ◽  
Author(s):  
Hiroyasu Shimizu ◽  
Yoshikazu Ohbayashi ◽  
Keiichi Yamamoto ◽  
Kenji Abe ◽  
Michio Midorikawa ◽  
...  
Keyword(s):  
Single Crystals ◽  
Far Infrared ◽  
Reflection Spectra ◽  
Infrared Reflection
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