Characterization of Grapho-Silicidation on n+4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices

2016 ◽  
Vol 5 (9) ◽  
pp. P457-P460 ◽  
Author(s):  
Milantha De Silva ◽  
Tomonori Maeda ◽  
Seiji Ishikawa ◽  
Hiroshi Sezaki ◽  
Takamichi Miyazaki ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Back Side ◽  
Power Devices

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted

Application of Back-side Alignment of Thick Layers for the Manufacturing of Advanced Power Devices

2006 ◽  
Author(s):  
Jung Kil Lee ◽  
R. Chisholm ◽  
M. van der Heijden ◽  
K. Best ◽  
P. ten Berge
Keyword(s):  
Back Side ◽  
Power Devices ◽  
Thick Layers

Long range, non-destructive characterization of GaN substrates for power devices

2019 ◽  
Vol 506 ◽  
pp. 178-184 ◽  
Author(s):  
J.C. Gallagher ◽  
T.J. Anderson ◽  
L.E. Luna ◽  
A.D. Koehler ◽  
J.K. Hite ◽  
...  
Keyword(s):  
Long Range ◽  
Power Devices ◽  
Non Destructive ◽  
Non Destructive Characterization

Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

2020 ◽  
Vol 1004 ◽  
pp. 725-730
Author(s):  
Fabrizio Roccaforte ◽  
Monia Spera ◽  
Salvatore Di Franco ◽  
Raffaella Lo Nigro ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Current Transport ◽  
Large Area ◽  
Si Substrates ◽  
Ohmic Behavior ◽  
Specific Contact ◽  
Thermionic Field Emission

Gallium nitride (GaN) and its AlGaN/GaN heterostructures grown on large area Si substrates are promising systems to fabricate power devices inside the existing Si CMOS lines. For this purpose, however, Au-free metallizations are required to avoid cross contaminations. In this paper, the mechanisms of current transport in Au-free metallization on AlGaN/GaN heterostructures are studied, with a focus on non-recessed Ti/Al/Ti Ohmic contacts. In particular, an Ohmic behavior of Ti/Al/Ti stacks was observed after an annealing at moderate temperature (600°C). The values of the specific contact resistance ρc decreased from 1.6×104 Ω.cm2 to 7×105 Ω.cm2 with increasing the annealing time from 60 to 180s. The temperature dependence of ρc indicated that the current flow is ruled by a thermionic field emission (TFE) mechanism, with barrier height values of 0.58 eV and 0.52 eV, respectively. Finally, preliminary results on the forward and reverse bias characterization of Au-free tungsten carbide (WC) Schottky contacts are presented. This contact exhibited a barrier height value of 0.82 eV.

Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide

2000 ◽  
Vol 77 (10) ◽  
pp. 1478-1480 ◽  
Author(s):  
S.-K. Lee ◽  
C.-M. Zetterling ◽  
E. Danielsson ◽  
M. Östling ◽  
J.-P. Palmquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Aluminum Ion ◽  
Ion Implanted

Noninvasive optical characterization of Ohmic contacts

2002 ◽  
Author(s):  
P. Biernacki ◽  
H. Lee ◽  
A.R. Mickelson ◽  
M. Castagne ◽  
E. Bradbury ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Optical Characterization

Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices

2020 ◽  
Vol 36 (1) ◽  
pp. 014005
Author(s):  
Kai Fu ◽  
Xin Qi ◽  
Houqiang Fu ◽  
Po-Yi Su ◽  
Hanxiao Liu ◽  
...  
Keyword(s):  
Interface Properties ◽  
Power Devices
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