High-Yield Assembly of Graphene Field-Effect Transistors under a Non-Uniform Electric Field

2013 ◽  
Vol 3 (2) ◽  
pp. M15-M17 ◽  
Author(s):  
H. Park ◽  
S. Oh ◽  
J. Kim
2008 ◽  
Vol 18 (2) ◽  
pp. 285-293 ◽  
Author(s):  
H. L. Cheng ◽  
W. Y. Chou ◽  
C. W. Kuo ◽  
Y. W. Wang ◽  
Y. S. Mai ◽  
...  

Nano Futures ◽  
2019 ◽  
Vol 3 (1) ◽  
pp. 011002 ◽  
Author(s):  
Jinsu Pak ◽  
Kyungjune Cho ◽  
Jae-Keun Kim ◽  
Yeonsik Jang ◽  
Jiwon Shin ◽  
...  

ACS Sensors ◽  
2020 ◽  
Vol 5 (8) ◽  
pp. 2503-2513 ◽  
Author(s):  
Zhuang Hao ◽  
Yunlu Pan ◽  
Cong Huang ◽  
Ziran Wang ◽  
Qiao Lin ◽  
...  

2019 ◽  
Vol 21 (42) ◽  
pp. 23611-23619 ◽  
Author(s):  
Xinming Qin ◽  
Wei Hu ◽  
Jinlong Yang

Electric field and interlayer coupling tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures have been predicted theoretically to expect potential applications in graphene-based field-effect transistors.


2012 ◽  
Vol 23 (12) ◽  
pp. 125201 ◽  
Author(s):  
Muhammad R Islam ◽  
Kristy J Kormondy ◽  
Eliot Silbar ◽  
Saiful I Khondaker

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