The Nature of Silicon Nanowire Roughness and Thermal Conductivity Suppression by Phonon Scattering Mechanisms

2017 ◽  
Vol 6 (3) ◽  
pp. N3029-N3035 ◽  
Author(s):  
Colm Glynn ◽  
Kim-Marie Jones ◽  
Vishnu Mogili ◽  
William McSweeney ◽  
Colm O'Dwyer
Keyword(s):  
Thermal Conductivity ◽  
Phonon Scattering ◽  
Silicon Nanowire ◽  
Scattering Mechanisms

LATTICE THERMAL CONDUCTIVITY IN A HOLLOW SILICON NANOWIRE

2005 ◽  
Vol 19 (06) ◽  
pp. 1017-1027 ◽  
Author(s):  
WEI-QING HUANG ◽  
KE-QIU CHEN ◽  
Z. SHUAI ◽  
LINGLING WANG ◽  
WANGYU HU
Keyword(s):  
Thermal Conductivity ◽  
Relaxation Time ◽  
Lattice Thermal Conductivity ◽  
Silicon Nanowire ◽  
Boundary Scattering ◽  
Phonon Confinement ◽  
Time Approximation ◽  
Si Nanowire ◽  
Scattering Mechanisms ◽  
Relaxation Time Approximation

We theoretically investigate the lattice thermal conductivity of a hollow Si nanowire under the relaxation time approximation. The results show that the thermal conductivity in such structure is decreased markedly below the bulk value due to phonon confinement and boundary scattering. The thermal conductivities under different scattering mechanisms are given, and it is found that the boundary scattering is dominant resistive process for the decrease of the thermal conductivity.

Thermal conductivity and phonon scattering mechanisms in La#x2212;x#x2212;x#x2212;xMxCuO4

1996 ◽  
Vol 105 (3-4) ◽  
pp. 981-986 ◽  
Author(s):  
Hiroyuki Fujishiro ◽  
Manabu Ikebe ◽  
Masayuki Yagi ◽  
Kiminari Nakasato ◽  
Yuzo Shibazaki ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Phonon Scattering ◽  
Scattering Mechanisms

scholarly journals Analysis of the Effect of Resonant Phonon Scattering on the Thermal Conductivity of CaF2

1976 ◽  
Vol 29 (2) ◽  
pp. 19 ◽  
Author(s):  
PRW Hudson ◽  
EE Gibbs
Keyword(s):  
Thermal Conductivity ◽  
Low Temperatures ◽  
Phonon Scattering ◽  
Low Frequency ◽  
Resonant Scattering ◽  
Boundary Scattering ◽  
Scattering Mechanism ◽  
Scattering Mechanisms ◽  
Phonon Conduction

An analysis is presented of the various phonon contributions to the thermal conductivity of CaF2 doped with 1�0% and 0�1 % of yttrium or thulium. The broad phonon resonant scattering term is found to reduce the low frequency phonon conduction significantly. This is responsible for the relatively stronger suppression of the conductivity at low temperatures in the phonon boundary scattering region. Thus broad quasilocalized phonon resonant scattering mechanisms have a similar effect to phonon precipitate scattering. It also follows that, in the case of a broad resonant scattering mechanism, a dip will not necessarily be seen in the conductivity.

scholarly journals Phonon scattering mechanisms dictating the thermal conductivity of lead zirconate titanate (PbZr1−xTixO3) thin films across the compositional phase diagram

2017 ◽  
Vol 121 (20) ◽  
pp. 205104 ◽  
Author(s):  
Brian M. Foley ◽  
Elizabeth A. Paisley ◽  
Christopher DiAntonio ◽  
Tom Chavez ◽  
Mia Blea-Kirby ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Phase Diagram ◽  
Lead Zirconate Titanate ◽  
Phonon Scattering ◽  
Lead Zirconate ◽  
Scattering Mechanisms ◽  
Zirconate Titanate

Lattice Thermal Conductivity Modelling of a Diatomic Nanoscale Material

2020 ◽  
Vol 10 (5) ◽  
pp. 602-609
Author(s):  
Adil H. Awad
Keyword(s):  
Thermal Conductivity ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Correction Term ◽  
Nanoscale Material ◽  
New Approach ◽  
Two Samples ◽  
Conductivity Modelling ◽  
Callaway Model

Introduction: A new approach for expressing the lattice thermal conductivity of diatomic nanoscale materials is developed. Methods: The lattice thermal conductivity of two samples of GaAs nanobeam at 4-100K is calculated on the basis of monatomic dispersion relation. Phonons are scattered by nanobeam boundaries, point defects and other phonons via normal and Umklapp processes. Methods: A comparative study of the results of the present analysis and those obtained using Callaway formula is performed. We clearly demonstrate the importance of the utilised scattering mechanisms in lattice thermal conductivity by addressing the separate role of the phonon scattering relaxation rate. The formulas derived from the correction term are also presented, and their difference from Callaway model is evident. Furthermore their percentage contribution is sufficiently small to be neglected in calculating lattice thermal conductivity. Conclusion: Our model is successfully used to correlate the predicted lattice thermal conductivity with that of the experimental observation.

scholarly journals Scattering Mechanisms and Suppression of Bipolar Diffusion Effect in Bi2Te2.85Se0.15Ix Compounds

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1564
Author(s):  
Jin Hee Kim ◽  
Song Yi Back ◽  
Jae Hyun Yun ◽  
Ho Seong Lee ◽  
Jong-Soo Rhyee
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Lattice Distortion ◽  
Phonon Scattering ◽  
Iodine Concentration ◽  
Mean Free Path ◽  
Bandgap Energy ◽  
Diffusion Effect ◽  
Iodine Doping

We investigated the anisotropic thermoelectric properties of the Bi2Te2.85Se0.15Ix (x = 0.0, 0.1, 0.3, 0.5 mol.%) compounds, synthesized by ball-milling and hot-press sintering. The electrical conductivities of the Bi2Te2.85Se0.15Ix were significantly improved by the increase of carrier concentration. The dominant electronic scattering mechanism was changed from the mixed (T ≤ 400 K) and ionization scattering (T ≥ 420 K) for pristine compound (x = 0.0) to the acoustic phonon scattering by the iodine doping. The Hall mobility was also enhanced with the increasing carrier concentration. The enhancement of Hall mobility was caused by the increase of the mean free path of the carrier from 10.8 to 17.7 nm by iodine doping, which was attributed to the reduction of point defects without the meaningful change of bandgap energy. From the electron diffraction patterns, a lattice distortion was observed in the iodine doped compounds. The modulation vector due to lattice distortion increased with increasing iodine concentration, indicating the shorter range lattice distortion in real space for the higher iodine concentration. The bipolar thermal conductivity was suppressed, and the effective masses were increased by iodine doping. It suggests that the iodine doping minimizes the ionization scattering giving rise to the suppression of the bipolar diffusion effect, due to the prohibition of the BiTe1 antisite defect, and induces the lattice distortion which decreases lattice thermal conductivity, resulting in the enhancement of thermoelectric performance.

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