Improved Retention Characteristics of Pd-Nanocrystal-Based Nonvolatile Memories by a Simple Timing Technique

2015 ◽  
Vol 4 (12) ◽  
pp. N20-N22
Author(s):  
T.-K. Kang ◽  
Y.-F. Chen ◽  
C.-L. Lin ◽  
F.-H. Wang ◽  
H.-W. Liu ◽  
...  
Keyword(s):  
Nonvolatile Memories ◽  
Retention Characteristics

Charge Trapping Sites in nc-RuO Embedded ZrHfO High-k Nonvolatile Memories

2010 ◽  
Vol 1250 ◽  
Author(s):  
Chen-Han Lin ◽  
Yue Kuo
Keyword(s):  
Dielectric Film ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Mos Capacitor ◽  
Hole Trapping ◽  
Nonvolatile Memories ◽  
High K ◽  
Voltage Stress ◽  
Retention Characteristics ◽  
Trapping Sites

AbstractMaterials and electrical properties of the MOS capacitor containing nc-RuO embedded in the high-k ZrHfO dielectric film have been studied. The electron- and hole-trapping capacities and trapping sites in this kind of device were investigated using the constant voltage stress method, the frequency-dependent C-V measurement, and the retention characteristics. The negligible charge trapping phenomenon in the non-embedded device rules out the possibility of any trapping site in the bulk ZrHfO film or at the Si/ZrHfO interface. The electrical characterization result suggests that electrons are trapped in the bulk nc-RuO. However, holes have two possible trapping sites, i.e., in the bulk nc-RuO or at the nc-RuO/ZrHfO interface.

Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory

2009 ◽  
Vol E92-C (5) ◽  
pp. 659-663 ◽  
Author(s):  
Doo-Hyun KIM ◽  
Il Han PARK ◽  
Seongjae CHO ◽  
Jong Duk LEE ◽  
Hyungcheol SHIN ◽  
...  
Keyword(s):  
Flash Memory ◽  
Double Gate ◽  
Gate Structure ◽  
Retention Characteristics

Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

2016 ◽  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrostatic Potential ◽  
Critical Dimension ◽  
Data Retention ◽  
Signal Line ◽  
Adjacent Node ◽  
Storage Node ◽  
Retention Characteristics ◽  
Node Voltage ◽  
The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

Nutrient-Use Patterns in Nursery Crops

HortScience ◽  
1998 ◽  
Vol 33 (3) ◽  
pp. 557a-557
Author(s):  
Mary Ann Rose ◽  
Barbara Biernacka
Keyword(s):  
Nutrient Retention ◽  
The United States ◽  
Soil Conditions ◽  
Woody Ornamentals ◽  
Use Patterns ◽  
Nutrient Demand ◽  
Nutrient Use ◽  
Fertilizer Recommendations ◽  
Retention Characteristics ◽  
Practical Constraints

Long-standing fertilizer recommendations for field-grown nursery and landscape ornamentals are based on maximizing growth, not nutrient efficiency. Further, these recommendations fall short because of failure to consider 1) the extent of crop nutrient removal, 2) varying nutrient retention characteristics of soils across the United States, and 3) a body of research that suggests that woody ornamentals have a limited response to fertilization under most soil conditions. Concern for the environmental impact of fertilization justifies a reevaluation of current nursery fertilization practices, as well a discussion of the practical constraints on the adoption of new approaches, e.g., nutrient demand-driven fertilization. Research on the nutrient use patterns of woody plants will be reviewed with emphasis on implications for increasing fertilization efficiency. OSU research on water availability and nutrient-use interactions also will be presented.

Efficient Fabrication of MoS2 Nanocomposites by Water-Assisted Exfoliation for Nonvolatile Memories

2021 ◽  
Author(s):  
Honglei Wang ◽  
Pengfei Cheng ◽  
Jun Shi ◽  
Dong Wang ◽  
Hongguang Wang ◽  
...  
Keyword(s):  
Hexagonal Phase ◽  
New Method ◽  
Nonvolatile Memories

Efficient and green exfoliation of bulk MoS2 into few-layered nanosheets in the semiconducting hexagonal phase (2H-phase) remains a great challenge. Here, we developed a new method, water-assisted exfoliation (WAE), for...

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