scholarly journals Physical Analysis of VO2Films Grown by Atomic Layer Deposition and RF Magnetron Sputtering

2014 ◽  
Vol 3 (6) ◽  
pp. N89-N94 ◽  
Author(s):  
Madhavi Tangirala ◽  
Kai Zhang ◽  
David Nminibapiel ◽  
Venkateswara Pallem ◽  
Christian Dussarrat ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Physical Analysis ◽  
Layer Deposition

Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator

2004 ◽  
Vol 449-452 ◽  
pp. 977-980 ◽  
Author(s):  
S.G. Kim ◽  
Seung Boo Jung ◽  
Ji Hun Oh ◽  
H.J. Kim ◽  
Yong Hyeon Shin
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Film Deposition ◽  
Layer Deposition ◽  
Film Bulk Acoustic Resonator ◽  
Film Bulk

Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, for Film Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this study was composed of following two procedures; the 1st deposition was using ALD method and 2nd deposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were deposited using alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging. Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step deposited ZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, this method could be applied to the FBAR applications, since FBAR devices require high quality of thin films.

VO2 Films Prepared by Atomic Layer Deposition and RF Magnetron Sputtering

2013 ◽  
Vol 58 (10) ◽  
pp. 49-58 ◽  
Author(s):  
M. Tangirala ◽  
K. Zhang ◽  
D. Nminibapiel ◽  
V. Pallem ◽  
C. Dussarrat ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Layer Deposition

Perpendicular Magnetic Anisotropy in Pt/Co/AlO Trilayer Structures Depending on AlO Thickness and Fabrication Method

2014 ◽  
Vol 616 ◽  
pp. 247-251
Author(s):  
Tim Yang ◽  
Z.Q. Wang ◽  
Makoto Kohda ◽  
Takeshi Seki ◽  
Koki Takanashi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Layer Deposition ◽  
Significant Damage ◽  
Arbitrary Thickness ◽  
High Kinetic Energy

We investigate the perpendicular magnetic anisotropy dependence on the AlO capping layer in Pt/Co/AlO films. AlO was deposited on Pt/Co films by RF magnetron sputtering and atomic layer deposition (ALD) with varying thickness. It is found that the prolonged deposition of thick AlO layers by RF magnetron sputtering causes significant damage to the Pt/Co underneath while AlO layers formed by ALD can be of arbitrary thickness with no damage to the magnetic properties of the films. The decline of the magnetic properties can be attributed to the method of AlO deposition for each process. In the RF magnetron sputtering, AlO atoms with high kinetic energy are ejected from a sputter target resulting in the degradation of Pt/Co films, while the process of deposition of AlO by ALD is governed by a series of chemically reactive condensations allowing for arbitrary deposition thickness of AlO.

scholarly journals A promising carbon fiber-based photocatalyst with hierarchical structure for dye degradation

RSC Advances ◽  
2017 ◽  
Vol 7 (36) ◽  
pp. 22234-22242 ◽  
Author(s):  
Chen Gu ◽  
Sen Xiong ◽  
Zhaoxiang Zhong ◽  
Yong Wang ◽  
Weihong Xing
Keyword(s):  
Carbon Fiber ◽  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Carbon Fibers ◽  
Dye Degradation ◽  
Zno Nanorods ◽  
Pt Nanoparticles ◽  
Atomic Layer ◽  
Dc Magnetron Sputtering ◽  
Layer Deposition

To fabricate a novel photocatalyst, ZnO seeds were uniformly deposited on carbon fibers via atomic layer deposition followed by hydrothermal growth of ZnO nanorods, then Pt nanoparticles were deposited by DC magnetron sputtering.

scholarly journals The effect of the thickness of tunneling layer on the memory properties of (Cu2O)0.5(Al2O3)0.5 high-k composite charge-trapping memory devices

2016 ◽  
Vol 30 (15) ◽  
pp. 1650279 ◽  
Author(s):  
Jinqiu Liu ◽  
Jianxin Lu ◽  
Jiang Yin ◽  
Bo Xu ◽  
Yidong Xia ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Memory Devices ◽  
Layer Deposition ◽  
High K ◽  
Charge Trapping Memory ◽  
Deposition Techniques ◽  
Composite Charge

The charge-trapping memory devices namely Pt/Al2O3/(Al2O[Formula: see text](Cu2O)[Formula: see text]/SiO2/[Formula: see text]-Si with 2, 3 and 4 nm SiO2 tunneling layers were fabricated by using RF magnetron sputtering and atomic layer deposition techniques. At an applied voltage of ±11 V, the memory windows in the C–V curves of the memory devices with 2, 3 and 4 nm SiO2 tunneling layers were about 4.18, 9.91 and 11.33 V, respectively. The anomaly in memory properties among the three memory devices was ascribed to the different back tunneling probabilities of trapped electrons in the charge-trapping dielectric (Al2O[Formula: see text](Cu2O)[Formula: see text] due to the different thicknesses of SiO2 tunneling layer.

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