Simple Wafer-Scale Growth and Transfer of Graphene Film Converted from Spin-Coated Fullerene Derivative

2012 ◽  
Vol 2 (2) ◽  
pp. M13-M16 ◽  
Author(s):  
J. Hoon Seo ◽  
J.-W. Kang ◽  
D.-H. Kim ◽  
S. Jo ◽  
S. Yoon Ryu ◽  
...  
Keyword(s):  
Graphene Film ◽  
Fullerene Derivative ◽  
Scale Growth ◽  
Wafer Scale

Wafer-Scale Growth of ITO Nanorods by Radio Frequency Magnetron Sputtering Deposition

2011 ◽  
Vol 158 (5) ◽  
pp. K131 ◽  
Author(s):  
Jae Hyoung Park ◽  
Hoo Keun Park ◽  
Jinhoo Jeong ◽  
Woong Kim ◽  
Byoung Koun Min ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Scale Growth ◽  
Sputtering Deposition ◽  
Wafer Scale

scholarly journals Wafer Scale Growth and Characterization of Edge Specific Graphene Nanoribbons for Nanoelectronics

2018 ◽  
Vol 2 (1) ◽  
pp. 156-162 ◽  
Author(s):  
Alexei A. Zakharov ◽  
Nikolay A. Vinogradov ◽  
Johannes Aprojanz ◽  
Thi Thuy Nhung Nguyen ◽  
Christoph Tegenkamp ◽  
...  
Keyword(s):  
Graphene Nanoribbons ◽  
Scale Growth ◽  
Wafer Scale

A Method to Manufacture Repeatible Graphene-Based NEMS Devices at the Wafer-Scale

2016 ◽  
Author(s):  
Joon Hyong Cho ◽  
Guoao Sun ◽  
Michael Cullinan
Keyword(s):  
Natural Frequency ◽  
High Precision ◽  
Copper Catalyst ◽  
Graphene Film ◽  
Catalyst Layer ◽  
Initial Tension ◽  
Back Gate ◽  
Suspended Graphene ◽  
Wafer Scale ◽  
Displacement Sensors

One of the major challenges in producing highly accurate graphene-based nanoelectromechanical (NEMS) resonators is the poor fabrication repeatability of graphene-based NEMS devices due to small variations in the residual stress and initial tension of the graphene film. This has meant that graphene-based nanoelectromechanical resonators tend to have large variations in natural frequency and quality factor from device to device. This poor repeatability makes it impossible to use these resonators to make accurate, high-precision force and displacement sensors or electromechanical filters. However, by actively controlling the tension on the graphene resonator it is possible both to increase repeatability between devices and to increase the force/mass sensitivity of the nanoelectromechanical resonators produced. Such tension control makes it possible to produce electrometrical filters that can be precisely tuned over a frequency range of up to several orders-of-magnitude. In order to controllably strain the graphene resonator, a microelectromechanical system (MEMS) is be used to apply tension to the graphene. The MEMS device consists of a graphene resonator connected between a set of gold electrodes. Each gold electrode is located on a different MEMS stage. Each stage is connected to a set of flexural bearings which are used to guide the motion of the stage. The displacement stage is actuated using a thermal actuator that allows a uniform and constant tension to be applied to the graphene resonator. The displacement of the actuator and the tension applied to the graphene are measured using a pair of differential capacitive actuators. The resonator is actuated electrostatically using the electrical back gate, and the resonant frequency is measured from the change in conductance of the graphene as it approaches resonance. Using this setup, it is possible to tune the natural frequency of the graphene resonator with high precision and accuracy. In addition to designing devices that can compensate for manufacturing errors in nanomanufactured devices, this paper will present several methods that can greatly expand the scope and rate at which nanomaterials-based devices can be fabricated. For example, this paper will present a transfer-free, wafer-scale manufacturing process that can be used to produce suspended graphene-based devices such as the graphene-based NEMS resonators. This new method involves the growth of graphene directly on the device wafer and release of the graphene-based device through etching of the copper catalyst layer. This method replaces traditional graphene fabrication methods, such as mechanical exfoliation, electron beam lithography, or transfer from copper foils, which are slow and require a transfer step that is the source of much of inconsistency in suspended graphene-based devices. Therefore, these new transfer-free, wafer-scale fabrication methods offer the potential to increase the throughput, yield, and repeatability of manufacturing processes for graphene resonators while reducing manufacturing costs and complexity.

Wafer-Scale Growth of Pristine and Doped Monolayer MoS2 Films for Electronic Device Applications

2020 ◽  
Vol 59 (23) ◽  
pp. 17356-17363
Author(s):  
Dongsheng Wang ◽  
Yue Zhou ◽  
Hao Zhang ◽  
Rufan Zhang ◽  
Haoyu Dong ◽  
...  
Keyword(s):  
Electronic Device ◽  
Monolayer Mos2 ◽  
Scale Growth ◽  
Wafer Scale ◽  
Device Applications

Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors

Nano Letters ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 2148-2153 ◽  
Author(s):  
Congwei Tan ◽  
Min Tang ◽  
Jinxiong Wu ◽  
Yinan Liu ◽  
Tianran Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Performance ◽  
Perovskite Oxides ◽  
Scale Growth ◽  
Wafer Scale

Wafer-scale growth of MoS2thin films by atomic layer deposition

Nanoscale ◽  
2016 ◽  
Vol 8 (20) ◽  
pp. 10792-10798 ◽  
Author(s):  
Jung Joon Pyeon ◽  
Soo Hyun Kim ◽  
Doo Seok Jeong ◽  
Seung-Hyub Baek ◽  
Chong-Yun Kang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Scale Growth ◽  
Wafer Scale ◽  
Layer Deposition

Wafer-scale growth of single-crystal graphene on vicinal Ge(001) substrate

Nano Today ◽  
2020 ◽  
Vol 34 ◽  
pp. 100908
Author(s):  
Panlin Li ◽  
Wenya Wei ◽  
Miao Zhang ◽  
Yongfeng Mei ◽  
Paul K. Chu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Scale Growth ◽  
Wafer Scale

scholarly journals Atomically thin three-dimensional membranes of van der Waals semiconductors by wafer-scale growth

2019 ◽  
Vol 5 (7) ◽  
pp. eaaw3180 ◽  
Author(s):  
Gangtae Jin ◽  
Chang-Soo Lee ◽  
Xing Liao ◽  
Juho Kim ◽  
Zhen Wang ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Semiconductor Films ◽  
Scale Growth ◽  
Wafer Scale ◽  
Equilibrium Limit ◽  
Si Substrates ◽  
3D Texture

We report wafer-scale growth of atomically thin, three-dimensional (3D) van der Waals (vdW) semiconductor membranes. By controlling the growth kinetics in the near-equilibrium limit during metal-organic chemical vapor depositions of MoS2 and WS2 monolayer (ML) crystals, we have achieved conformal ML coverage on diverse 3D texture substrates, such as periodic arrays of nanoscale needles and trenches on quartz and SiO2/Si substrates. The ML semiconductor properties, such as channel resistivity and photoluminescence, are verified to be seamlessly uniform over the 3D textures and are scalable to wafer scale. In addition, we demonstrated that these 3D films can be easily delaminated from the growth substrates to form suspended 3D semiconductor membranes. Our work suggests that vdW ML semiconductor films can be useful platforms for patchable membrane electronics with atomic precision, yet large areas, on arbitrary substrates.

Wafer-Scale Growth and Transfer of Aligned Single-Walled Carbon Nanotubes

2009 ◽  
Vol 8 (4) ◽  
pp. 498-504 ◽  
Author(s):  
N. Patil ◽  
A. Lin ◽  
E.R. Myers ◽  
Koungmin Ryu ◽  
A. Badmaev ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Single Walled Carbon Nanotubes ◽  
Scale Growth ◽  
Wafer Scale ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes
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