Suppression of Oxygen Vacancy and Enhancement in Bias Stress Stability of High-Mobility ZnO Thin-Film Transistors with N2O Plasma Treated MgO Gate Dielectrics
2013 ◽
Vol 2
(6)
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pp. P287-P291
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2014 ◽
Vol 25
(1)
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pp. 134-141
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2019 ◽
Vol 21
(5)
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pp. 370-379
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2011 ◽
Vol 21
(35)
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pp. 13524
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