Bias stress stable aqueous solution derived Y-doped ZnO thin film transistors

2011 ◽  
Vol 21 (35) ◽  
pp. 13524 ◽  
Author(s):  
Taehwan Jun ◽  
Keunkyu Song ◽  
Yangho Jung ◽  
Sunho Jeong ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Bias Stress ◽  
Doped Zno

High performance and high stability low temperature aqueous solution-derived Li–Zr co-doped ZnO thin film transistors

2012 ◽  
Vol 22 (12) ◽  
pp. 5390 ◽  
Author(s):  
Yangho Jung ◽  
Wooseok Yang ◽  
Chang Young Koo ◽  
Keunkyu Song ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
High Stability ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Co Doped

High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

2013 ◽  
Vol 11 (8) ◽  
pp. 1509-1512 ◽  
Author(s):  
Dedong Han ◽  
Jian Cai ◽  
Wei Wang ◽  
Liangliang Wang ◽  
Yi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Zno Thin Film ◽  
High K ◽  
Doped Zno

scholarly journals Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1186
Author(s):  
Soo Cheol Kang ◽  
So Young Kim ◽  
Sang Kyung Lee ◽  
Kiyung Kim ◽  
Billal Allouche ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxygen Vacancies ◽  
Drain Current ◽  
Vacuum Treatment ◽  
Trap Level ◽  
Zno Thin Film ◽  
Electrical Characteristics ◽  
Bias Stress ◽  
Trap Assisted Tunneling

The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (ID) via trap-assisted tunneling when the gate voltage (VG) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient. We determined that the trap-induced Schottky barrier lowering reduced a drain barrier when the drain was subjected to negative bias stress. Consequentially, the field effect mobility increased from 8.5 m2 V−1·s−1 to 8.9 m2 V−1·s−1 and on-current increased by ~13%.

Sn‐doped ZnO thin‐film transistors with AZO, TZO and Al heterojunction source/drain contacts

2016 ◽  
Vol 52 (4) ◽  
pp. 302-304 ◽  
Author(s):  
Yi Zhang ◽  
Dedong Han ◽  
Lingling Huang ◽  
Junchen Dong ◽  
Yingying Cong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Doped Zno

Effects of Li doping on the negative bias stress stability of solution-processed ZnO thin film transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (84) ◽  
pp. 68392-68396 ◽  
Author(s):  
Bokyung Kim ◽  
Si Yun Park ◽  
Jieun Ko ◽  
Young-Jae Kim ◽  
Youn Sang Kim
Keyword(s):  
Thin Film Transistors ◽  
Field Effect ◽  
Negative Bias ◽  
Zno Thin Film ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Li Doping ◽  
Bias Stress ◽  
Stability Of Solution ◽  
Doped Zno

To investigate the effect of Li dopant on the electrical characteristics under negative bias stress (NBS), we analysed ZnO and Li doped ZnO TFTs. The Li dopant enhanced the field effect mobility and sustained the variation in Von of the ZnO TFTs.

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