scholarly journals Two-Dimensional Device Simulation of High-Voltage Lateral DMOSFETS

1987 ◽  
Vol 1987-13 (1) ◽  
pp. 318-327
Author(s):  
Richard K. Williams
Keyword(s):  
High Voltage ◽  
Device Simulation ◽  
Two Dimensional

An Image Reconstruction System Applied to High Voltage Microscopy

1975 ◽  
Vol 33 ◽  
pp. 292-293
Author(s):  
D. E. Johnson
Keyword(s):  
High Voltage ◽  
Prior Information ◽  
Block Diagram ◽  
Three Dimensional ◽  
Real Space ◽  
Two Dimensional ◽  
Efficient Manner ◽  
Fourier Methods ◽  
Tilt Series ◽  
Methods Of Reconstruction

Increased specimen penetration; the principle advantage of high voltage microscopy, is accompanied by an increased need to utilize information on three dimensional specimen structure available in the form of two dimensional projections (i.e. micrographs). We are engaged in a program to develop methods which allow the maximum use of information contained in a through tilt series of micrographs to determine three dimensional speciman structure.In general, we are dealing with structures lacking in symmetry and with projections available from only a limited span of angles (±60°). For these reasons, we must make maximum use of any prior information available about the specimen. To do this in the most efficient manner, we have concentrated on iterative, real space methods rather than Fourier methods of reconstruction. The particular iterative algorithm we have developed is given in detail in ref. 3. A block diagram of the complete reconstruction system is shown in fig. 1.

scholarly journals Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 91-95 ◽  
Author(s):  
A. Asenov ◽  
A. R. Brown ◽  
S. Roy ◽  
J. R. Barker
Keyword(s):  
Simulated Annealing Algorithm ◽  
Semiconductor Device ◽  
Electronic Device ◽  
Device Simulation ◽  
Power Electronic ◽  
Two Dimensional ◽  
Solution Strategy ◽  
Rectangular Grids ◽  
Annealing Algorithm ◽  
2D And 3D

Topologically rectangular grids offer simplicity and efficiency in the design of parallel semiconductor device simulators tailored for mesh connected MIMD platforms. This paper presents several approaches to the generation of topologically rectangular 2D and 3D grids. The effects of the partitioning of such grids on different processor configurations are studied. A simulated annealing algorithm is used to optimise the partitioning of 2D and 3D grids on two dimensional arrays of processors. Problems related to the discretization, parallel matrix generation and solution strategy are discussed. The use of topologically rectangular grids is illustrated through the example of power electronic device simulation.

Two-dimensional device simulation for radio frequency performance of AlGaN/GaN HEMT

2015 ◽  
Author(s):  
Lin-Qing Zhang ◽  
Hong-Fan Huang ◽  
Xiao-Yong Liu ◽  
Jin-Shan Shi ◽  
Zhuo Liu ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Device Simulation ◽  
Two Dimensional ◽  
Gan Hemt

Orbit demonstration of two-dimensional deployable array including high voltage photovoltaic power generation

1992 ◽  
Vol 26 (8-10) ◽  
pp. 653-663 ◽  
Author(s):  
Hitoshi Kuninaka ◽  
Michihiro Natori ◽  
Yoshiharu Kawai ◽  
Shingo Ikegami
Keyword(s):  
Power Generation ◽  
High Voltage ◽  
Two Dimensional ◽  
Photovoltaic Power

Analysis of highly doped collector transistors by using two-dimensional process/device simulation and its application of ECL circuits

1991 ◽  
Vol 38 (8) ◽  
pp. 1840-1844 ◽  
Author(s):  
H. Goto ◽  
Y. Nagase ◽  
T. Takada ◽  
A. Tahara ◽  
Y. Momma
Keyword(s):  
Device Simulation ◽  
Two Dimensional
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