Characterization of Single-Crystal 3C-SIC Epitaxial Layers on SI Substrates

1998 ◽  
Vol 535 ◽  
Author(s):  
S. E. Saddow ◽  
M. E. Okhusyen ◽  
M. S. Mazzola ◽  
M. Dudley ◽  
X. R. Huang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Cross Section ◽  
Epitaxial Layers ◽  
Si Substrate ◽  
Strain Fields ◽  
X Ray ◽  
Si Substrates ◽  
Sic Film

AbstractIn this paper we discuss the growth and characterization of 3C-SiC epitaxial layers grown on both a Si substrate as well as on a novel substrate. The growth uses a typical three step process. First an etch of the Si surface is performed, second the surface of the Si is carbonized and third 3C-SiC is grown on the carbonized surface. Several characterization techniques were used to verify the quality of the 3C-SiC film. Microscopy was used to investigate the surface morphology, X-ray and electron diffraction were used to determine crystal structure, cross section TEM was used to verify crystal structure and highlight twinning, and x-ray topography was used to measure the strain fields induced in Si substrate at the 3C-SiC/Si interface.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

Characterization of Epitaxial CoSi2 Films Grown on Si

1984 ◽  
Vol 41 ◽  
Author(s):  
A. H. Hamdi ◽  
M-A. Nicolet ◽  
Y. C. Kao ◽  
M. Tejwani ◽  
K. L. Wang
Keyword(s):  
High Temperature Annealing ◽  
Si Substrate ◽  
Chemical Cleaning ◽  
X Ray ◽  
Lattice Constants ◽  
Si Substrates ◽  
Preparation Techniques ◽  
Minimum Yield

AbstractX-ray rocking curves and backscattering spectrometry with channeling have been employed to investigate epitaxial CoSi2 films grown on <111> Si substrates. Several preparation techniques were used: sputter cleaning, chemical cleaning, chemical cleaning with subsequent high temperature annealing, and e-gun evaporation on a cold or hot Si substrate, in situ annealing between 550–750°C for 30 min. Best results were obtained with chemical cleaning and pre-annealing at 925°C for 10 min, Co and Si codeposition on a 580'C hot substrate. For such samples, a typical x-ray perpendicular strain is -2.08%, and parallel strain is -0.11%. This parallel strain implies that the growth has been accommodated by dislocations with a spacing of ,∼ 2000 Å. The values of strain are consistent with the published lattice constants of Si and CoSi2 and Poisson's ratio of 0.28. The minimum yield in the channeling spectra of these films is. ∼ 3.6%, which is only slightly higher than that of <111> virgin Si.

scholarly journals Characterization of High Ge Content SiGe Heterostructures and Graded Alloy Layers Using Spectroscopic Ellipsometry

1994 ◽  
Vol 358 ◽  
Author(s):  
A. R. Heyd ◽  
S. A. Alterovitz ◽  
E. T. Croke
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Alloy Composition ◽  
Compressive Strain ◽  
Energy Shift ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Graded Layers

ABSTRACTSixGe1–x heterostructures on Si substrates have been widely studied due to the maturity of Si technology. However, work on SixGe1–x heterostructures on Ge substrates has not received much attention. A SixGe1–x: layer on a Si substrate is under compressive strain while SixGe1–x on Ge is under tensile strain; thus the critical points will behave differently. In order to accurately characterize high Ge content SixGe1–x layers the energy shift algorithm, which is used to calculate alloy compositions, has been modified. These results have been used along with variable angle spectroscopic ellipsometry (VASE) measurements to characterize SixGe1–x/Ge superlattices grown on Ge substrates. The results are found to agree closely with high resolution x-ray diffraction measurements made on the same samples.The modified energy shift algorithm also allows the VASE analysis to be upgraded in order to characterize linearly graded layers. In this work VASE has been used to characterize graded SixGe1–x layers in terms of the total thickness, and the start and end alloy composition. Results are presented for a 1 µm SixGe1–x layer linearly graded in the range 0.5 ≤ x ≤ 1.0.

Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

2015 ◽  
Vol 1 (1) ◽  
pp. 5
Author(s):  
Budi Astuti ◽  
Shaharin Fadzli Abd Rahman ◽  
Masahiro Tanikawa ◽  
Mohamad Rusop Mahmood ◽  
Kanji Yasui ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor ◽  
Diffraction Peak ◽  
Grown Film ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Growth Pressure ◽  
Si Substrates ◽  
Sic Film

Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO<sub>2</sub>/Si substrates was carried out using a home-made hot-mesh chemical vapor deposition (HM-CVD) apparatus. Monomethylsilane (MMS) was used as single source gas while hydrogen (H<sub>2</sub>) as carrier gas. The substrate temperature, tungsten mesh temperature, H<sub>2</sub> flow rate and distance between mesh and substrate were fixed at 750 °C, 1700 °C, 100 sccm and 30 mm, respectively. The growth pressures were set to 1.2, 1.8 and 2.4 Torr. The growth of 3C-SiC (111) on graphene/SiO<sub>2</sub>/Si were confirmed by the observation of θ-2θ diffraction peak at 35.68°. The diffraction peak of thin film on graphene/SiO<sub>2</sub>/Si substrate at pressure growth is 1.8 Torr is relatively more intense and sharper than thin film grown at pressure growth 1.2 and 2.4 Torr, thus indicates that the quality of grown film at 1.8 Torr is better. The sharp and strong peak at 33° was observed on the all film grown, that peak was attributed Si(200) nanocrystal. The reason why Si (200) nanocrystal layer is formed is not understood. In principle, it can’t be denied that the low quality of the grown thin film is influenced by the capability of our home-made apparatus. However, we believe that the quality can be further increased by the improvement of apparatus design. As a conclusion, the growth pressures around 1.8 Torr seems to be the best pressures for the growth of heteroepitaxial 3C-SiC thin film.

Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates

2012 ◽  
Vol 711 ◽  
pp. 31-34 ◽  
Author(s):  
Andrea Severino ◽  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via
Keyword(s):  
Linear Expansion ◽  
Linear Expansion Coefficient ◽  
Thermal Treatments ◽  
Applied Physics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Out Of Plane ◽  
Sic Film

3C-SiC lattice parameters, both in-plane and out-of-plane, have been studied as a function of the temperature (up to 773 K) by performing X-Ray Diffraction (XRD) measurements in coplanar and non-coplanar geometry during the thermal treatments. A tetragonal distortion of the 3C-SiC cell has been observed, with a=b≠c, resulting from a tensile stress status induced by the presence of Si substrate. A linear expansion coefficient of about 4.404 × 10-6 K-1 at 773 K has been obtained for a 15 μm thick 3C-SiC film grown on (100) Si substrate. The discrepancy with the value reported in literature of 5.05 × 10-6 K-1 at 800 K [Slack et al., Journal of Applied Physics 46, 89 (1975)] may be related to the different nature of samples used.

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

The preparation and characterization of Pt(Se3PPh)(PR3)2; the X-ray crystal structure of Pt(Se3PPh)(dppe)·CH2Cl2

Polyhedron ◽  
1990 ◽  
Vol 9 (7) ◽  
pp. 987-990 ◽  
Author(s):  
Ivan P. Parkin ◽  
Mark J. Pilkington ◽  
Alexandra M.Z. Slawin ◽  
David J. Williams ◽  
J.Derek Woollins
Keyword(s):  
Crystal Structure ◽  
X Ray
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