Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method

2019 ◽  
Vol 44 (1) ◽  
pp. 1275-1279
Author(s):  
Wei Li ◽  
Kazuhiro Nakajima ◽  
Chunmeng Dou ◽  
Kuniyuki Kakushima ◽  
Parhat Ahmet ◽  
...  
Keyword(s):  
Three Dimensional ◽  
State Density ◽  
Mos Capacitor ◽  
Conductance Method ◽  
Interfacial State

Schottky barrier height and interfacial state density on oxide-GaAs interface

2003 ◽  
Vol 94 (1) ◽  
pp. 348-353 ◽  
Author(s):  
J. S. Hwang ◽  
C. C. Chang ◽  
M. F. Chen ◽  
C. C. Chen ◽  
K. I. Lin ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
State Density ◽  
Interfacial State

Quantification of interfacial state density (Dit) at the high-k/III-V interface based on Hall effect measurements

2012 ◽  
Vol 112 (5) ◽  
pp. 054504 ◽  
Author(s):  
D. Veksler ◽  
P. Nagaiah ◽  
T. Chidambaram ◽  
R. Cammarere ◽  
V. Tokranov ◽  
...  
Keyword(s):  
Hall Effect ◽  
State Density ◽  
High K ◽  
Hall Effect Measurements ◽  
Interfacial State

Effect of WET treatment on Group III-V Compound Semiconductor Surface

2018 ◽  
Vol 282 ◽  
pp. 43-47
Author(s):  
Kenya Nishio ◽  
Suguru Saito ◽  
Yoshiya Hagimoto ◽  
Hayato Iwamoto
Keyword(s):  
Interfacial Properties ◽  
Interface State ◽  
State Density ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Surface ◽  
Air Exposure ◽  
Mos Capacitor ◽  
Group Iii ◽  
Inp Surface

In this work, we investigated interfacial properties of InP, which is a typical group III-V compound used for semiconductors, by using a chemical-treated metal oxide semiconductor (MOS) capacitor. The interfacial properties of InP is more affected by interface state density than the surface roughness and is greatly affected by In2O3in particular. Additionally, we evaluated In2O3growth during 24-hour rinsing and air exposure and found that In2O3on an InP surface grows larger during rinsing than during air exposure. To reduce In2O3, the rinse needs to be optimized.

A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing

2002 ◽  
Vol 389-393 ◽  
pp. 1057-1060 ◽  
Author(s):  
Kenji Fukuda ◽  
Junji Senzaki ◽  
Mitsuhiro Kushibe ◽  
Kazutoshi Kojima ◽  
Ryouji Kosugi ◽  
...  
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Large Reduction ◽  
Mos Capacitor

Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor

2008 ◽  
Vol 600-603 ◽  
pp. 735-738 ◽  
Author(s):  
Shinji Nakagomi ◽  
Kenta Sato ◽  
Shun Suzuki ◽  
Yoshihiro Kokubun
Keyword(s):  
Oxide Layer ◽  
Time Constant ◽  
Oxide Thickness ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Oxide Semiconductor ◽  
Mos Capacitor ◽  
Conductance Technique ◽  
Ambient Gas

A metal-oxide-semiconductor (MOS) capacitor was fabricated using 4H-SiC epitaxial layer, and the interface state was evaluated in oxygen and hydrogen ambient under high-temperature conditions by the AC conductance technique. The relationships between interface state density (Dit), and corresponding time constant (tit) were obtained. Influences of oxide thickness and of gate metal (Pt or Al) were studied. Dit of Pt gate capacitor is influenced by ambient gas at higher temperature but Dit of Al gate capacitor is little affected by ambient gas. Dit of capacitor with thicker oxide layer tends to be lower than that of capacitor with thinner oxide layer. Interface states with larger time constant are decreased for hydrogen ambient comparing with oxygen ambient in the Pt gate capacitor.

A Study on the Electronic Properties of Nitric Oxide Annealed MOS Structures Processed on 4H-SiC

2011 ◽  
Vol 1305 ◽  
Author(s):  
Kerlit Chew ◽  
Chin-Che Tin ◽  
Claude Ahyi ◽  
Kim Nie Chong ◽  
Meng Suan Liang ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Conduction Band ◽  
Drain Current ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Flat Band ◽  
Mos Capacitor ◽  
Uv Illumination ◽  
Thermal Oxide

ABSTRACTInterface state density profiling of the thermal oxide / n-type 4H-SiC interface which underwent post-oxidation nitric-oxide (NO) annealing showed that an interface state density of approximately 1×1011 cm−2eV−1 could be achieved at around 0.2 eV below the conduction band. It decreased exponentially by two orders to 1×109 cm-2eV-1 at around 0.9 eV from the conduction band. The values are comparable or better than other published work. The low interface state density achieved near the conduction band is important towards improved channel carrier mobility in SiC MOSFETs. A positive flat-band voltage shift of the SiC based MOS capacitor was also observed. The shift reduced under UV illumination. It could be attributed to slow acceptor-like (negatively-charged) traps, which may have contributed to the instabilities observed in drain current and threshold voltage suffered by SiC MOSFETs.

Electrical Study of Ferromagnet Metal Gate MOS Diode: Towards a Magnetic Memory Cell Integrated on Silicon

2007 ◽  
Vol 997 ◽  
Author(s):  
Mehdi Kanoun ◽  
Rabia Benabderrahmane ◽  
Christophe Duluard ◽  
Claire Baraduc ◽  
Nicolas Bruyant ◽  
...  
Keyword(s):  
Spin Injection ◽  
Memory Cell ◽  
State Density ◽  
Magnetic Memory ◽  
Metal Gate ◽  
Spintronic Devices ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Interfacial State ◽  
Electrical Study

AbstractThis work focuses on electrical characterisation of NiFe/SiO2/Si diodes that can be used as spin injection into silicon for future spintronic devices. Capacitance-voltage characteristics show a large increase of the Si/SiO2 interfacial state density compared to Al/SiO2/Si diodes. This result suggests that nickel and/or iron may have diffused across the SiO2 layer. Consistently the current-voltage experimental characteristics can be accounted for by using trap assisted electron transport mechanism. These traps may be attributed to ferromagnet atoms in the oxide bulk.

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