Quantification of interfacial state density (Dit) at the high-k/III-V interface based on Hall effect measurements

2012 ◽  
Vol 112 (5) ◽  
pp. 054504 ◽  
Author(s):  
D. Veksler ◽  
P. Nagaiah ◽  
T. Chidambaram ◽  
R. Cammarere ◽  
V. Tokranov ◽  
...  
Keyword(s):  
Hall Effect ◽  
State Density ◽  
High K ◽  
Hall Effect Measurements ◽  
Interfacial State

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Oxygen diffusion process in a Ba0.96La0.04SnO3thin film on SrTiO3(001) substrate as investigated by time-dependent Hall effect measurements

2015 ◽  
Vol 212 (7) ◽  
pp. 1487-1493 ◽  
Author(s):  
Woong-Jhae Lee ◽  
Hyung Joon Kim ◽  
Egon Sohn ◽  
Hoon Min Kim ◽  
Tai Hoon Kim ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Hall Effect ◽  
Oxygen Diffusion ◽  
Time Dependent ◽  
Hall Effect Measurements

scholarly journals Fractional Quantum Hall Effect Measurements at Zero g Factor

1997 ◽  
Vol 79 (21) ◽  
pp. 4246-4249 ◽  
Author(s):  
D. R. Leadley ◽  
R. J. Nicholas ◽  
D. K. Maude ◽  
A. N. Utjuzh ◽  
J. C. Portal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Fractional Quantum Hall Effect ◽  
Fractional Quantum ◽  
G Factor ◽  
Fractional Quantum Hall ◽  
Hall Effect Measurements

scholarly journals Hall Effect measurements on p-n-p InP structures

2008 ◽  
Vol 38 (1) ◽  
pp. 147-155 ◽  
Author(s):  
C. A. C. Sequeira ◽  
D. M. F. Santos
Keyword(s):  
Hall Effect ◽  
Hall Effect Measurements

Structural, electrical, and optical property studies of indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures

1999 ◽  
Vol 14 (7) ◽  
pp. 2778-2782 ◽  
Author(s):  
M. S. Han ◽  
T. W. Kang ◽  
T. W. Kim
Keyword(s):  
Hall Effect ◽  
Ftir Spectra ◽  
Epitaxial Layers ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Vacancy Defects ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Transmission Measurements ◽  
Van Der Pauw

Transmission electron microsopy (TEM), Hall effect, and Fourier transform infrared (FTIR) transmission measurements were performed to investigate the structural, electrical, and optical properties of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on Cd0.96Zn0.04Te (211) B substrates by molecular-beam epitaxy. The TEM measurements showed that high-quality Hg0.8Cd0.2Te epitaxial layers with interfacial abruptnesses were grown on the Cd0.96Zn0.04Te substrates. The Van der Pauw Hall effect measurements on typical indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures with a doping concentration of 6 × 1016 cm−3 at 10 K in a magnetic field of 0.5 T yielded a carrier density and a mobility of 2.2 × 1016 cm−3 and 40,000 cm2/V s, respectively. The FTIR spectra showed that the absorption edges of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures shifted to a shorter wavelength range than those of the undoped samples, which was caused by the Burstein–Moss effect. The FTIR spectra also showed that the transmittance intensities of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures increased compared with those of the undoped heterostructures, which is due to the compensation of the Hg vacancy defects by the indium atoms. These results indicate that the indium-doped Hg0.8Cd0.2Te epitaxial layers were high-quality n-type layers and that p-HgxCd1−xTe epilayers can be grown on indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures for the fabrication of HgxCd1−xTe photoconductors and photodiodes.

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