(Invited) III-Nitride Heterojunction Field-Effect Transistors and Heterojunction Bipolar Transistors for Next-Generation Power Electronics

2019 ◽  
Vol 41 (8) ◽  
pp. 73-85
Author(s):  
Russell D. Dupuis ◽  
Shyh-Chiang Shen ◽  
Zachary M. Lochner ◽  
Hee-Jin Kim ◽  
Yi-Chi Lee ◽  
...  
Keyword(s):  
Power Electronics ◽  
Heterojunction Bipolar Transistors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Bipolar Transistors ◽  
Next Generation ◽  
Heterojunction Field Effect Transistors ◽  
Generation Power

Microstructural Characterization of SiGe Heterolayers

1991 ◽  
Vol 239 ◽  
Author(s):  
N. David Theodore ◽  
Peter Fejes ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Infrared Detectors ◽  
Field Effect ◽  
Strain Energy ◽  
Field Effect Transistors ◽  
Microstructural Characterization ◽  
Bipolar Transistors ◽  
Misfit Dislocations ◽  
Extended Defects

ABSTRACTSiGe is of interest for use in heterojunction-bipolar transistors, infrared detectors and field-effect transistors. In this study, graded SiGe heterolayers grown on Si, and heterolayers grown on SIMOX by CVD, were characterized using TEM. The graded-heterolayers consisted of ten layers of Si1-xGex on substrate silicon. Misfit dislocations were present at interfaces in the bottom 4–5 layers of the heterostructure. This conforms with predictions from qualitative strain-energy considerations. The greatest density of misfit dislocations was present at the Si1-xGex interface between the bottom two layers of the heterostructure. Dislocations were observed to extend out of the interface and up into the heterolayer structure. The defects were found to interact with interfaces in the structure and finally cease extending upwards towards the surface of the wafer. In addition to graded heterolayers, SiGe heterolayers grown on SIMOX were also investigated. The structures consisted of epi-silicon grown on a Si/Si1-xGex superlattice which was in turn grown on a Si/SiO2 (SIMOX) structure. The behavior of defects in the layers was of interest. TEM characterization showed a large density of extended-defects present in the layers. Dislocations were observed to originate at the SIMOX oxide/Si interface, propagate up through the SiGe superlattice and into the epi-Si layer. Some dislocations were found to interact with the SiGe superlattice and cease propagating up towards the top of the wafer. SiGe superlattices with a higher concentration of Ge are more effective in reducing defect propagation towards the surface of the wafer.

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

scholarly journals Polythiophene–perylene diimide heterojunction field-effect transistors

2013 ◽  
Vol 1 (13) ◽  
pp. 2433 ◽  
Author(s):  
Sreenivasa Reddy Puniredd ◽  
Adam Kiersnowski ◽  
Glauco Battagliarin ◽  
Wojciech Zajączkowski ◽  
Wallace W. H. Wong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Perylene Diimide ◽  
Heterojunction Field Effect Transistors

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

2018 ◽  
Vol 57 (6S3) ◽  
pp. 06KA03
Author(s):  
Kenta Watanabe ◽  
Daiki Terashima ◽  
Mikito Nozaki ◽  
Takahiro Yamada ◽  
Satoshi Nakazawa ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Heterojunction Field Effect Transistors

scholarly journals Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

2013 ◽  
Vol 103 (16) ◽  
pp. 163504 ◽  
Author(s):  
C. Y. Zhu ◽  
F. Zhang ◽  
R. A. Ferreyra ◽  
V. Avrutin ◽  
Ü. Özgür ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Stress Effects ◽  
Electrical Stress ◽  
Heterojunction Field Effect Transistors
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