Surface Modification on Wet-Etched Patterned Sapphire Substrates Using Plasma Treatments for Improved GaN Crystal Quality and LED Performance

2011 ◽  
Vol 158 (10) ◽  
pp. H988 ◽  
Author(s):  
Kun-Ching Shen ◽  
Dong-Sing Wuu ◽  
Chun-Cheng Shen ◽  
Sin-Liang Ou ◽  
Ray-Hua Horng
Keyword(s):  
Surface Modification ◽  
Crystal Quality ◽  
Sapphire Substrates ◽  
Plasma Treatments ◽  
Gan Crystal ◽  
Patterned Sapphire Substrates

scholarly journals Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 3933
Author(s):  
Yuan Gao ◽  
Shengrui Xu ◽  
Ruoshi Peng ◽  
Hongchang Tao ◽  
Jincheng Zhang ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Comparative Research ◽  
Crystal Quality ◽  
Growth Mechanisms ◽  
Migration Ability ◽  
Sapphire Substrates ◽  
Gan Crystal ◽  
Patterned Sapphire Substrates

The utilization of sputtered AlN nucleation layers (NLs) and patterned sapphire substrates (PSSs) could greatly improve GaN crystal quality. However, the growth mechanism of GaN on PSSs with sputtered AlN NLs has not been thoroughly understood. In this paper, we deposited AlON by sputtering AlN with O2, and we found that the variation of thickness of sputtered AlON NLs greatly influenced GaN growth on PSSs. (1) For 10 nm thin AlON sputtering, no AlON was detected on the cone sidewalls. Still, GaN nucleated preferably in non-(0001) orientation on these sidewalls. (2) If the thickness of the sputtered AlON NL was 25 nm, AlON formed on the cone sidewalls and flat regions, and some small GaN crystals formed near the bottom of the cones. (3) If the sputtered AlON was 40 nm, the migration ability of Ga atoms would be enhanced, and GaN nucleated at the top of the cones, which have more chances to grow and generate more dislocations. Finally, the GaN growth mechanisms on PSSs with sputtered AlON NLs of different thicknesses were proposed.

scholarly journals Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE

2000 ◽  
Vol 5 (1) ◽  
Author(s):  
Gon Namkoong ◽  
W. Alan Doolittle ◽  
Sangbeom Kang ◽  
Huang Sa ◽  
April S. Brown ◽  
...  
Keyword(s):  
Grain Size ◽  
High Temperature ◽  
Low Temperature ◽  
Crystal Quality ◽  
Half Maximum ◽  
X Ray ◽  
Sapphire Substrates ◽  
Average Grain Size ◽  
Gan Crystal ◽  
Nitridation Temperature

The effect of the initial nitridation of the sapphire substrate on the GaN crystal quality as a function of substrate temperature was studied. GaN layers were grown by plasma-assisted molecular beam epitaxy (MBE) on sapphire substrates nitridated at different substrate temperatures. A strong improvement in the GaN crystal quality was observed at 100 °C nitridation temperature. Symmetric (0004) and asymmetric (10-5) full widths at half maximum (FWHM) of the x-ray rocking curves were 136 and 261 arcsec, respectively. This compares to an x-ray rocking curve full width at half maximum of 818 arcsec (0004) for conventional MBE buffer conditions. For our conventional buffer conditions, sapphire substrates were exposed to a N plasma at temperatures above 500 °C for 10min and then 25~50nm buffers were deposited without annealing at high temperature. The low temperature nitridation also shows an enhancement of the lateral growth of the GaN, resulting in larger grain sizes. The largest grain size achieved was approximately 2.8μm, while the average grain size was approximately 2.4μm at 100 °C nitridation temperature.

Crystal quality improvement of semipolar (20-21) GaN on patterned sapphire substrates by in-situ deposited SiN mask

2014 ◽  
Author(s):  
Tobias Meisch ◽  
Maryam Alimoradi-Jazi ◽  
Benjamin Neuschl ◽  
Martin Klein ◽  
Ingo Tischer ◽  
...  
Keyword(s):  
Quality Improvement ◽  
Crystal Quality ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

The growth behaviors and high controllability of GaN nanostructures on stripe-patterned sapphire substrates

2021 ◽  
pp. 149725
Author(s):  
Pengkun Li ◽  
Lilin Wang ◽  
Shujing Sun ◽  
Chaoyang Tu ◽  
Chenlong Chen
Keyword(s):  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Stress evolution in AlN growth on nano-patterned sapphire substrates

2019 ◽  
Vol 13 (1) ◽  
pp. 015504
Author(s):  
Nan Xie ◽  
Fujun Xu ◽  
Jiaming Wang ◽  
Yuanhao Sun ◽  
Baiyin Liu ◽  
...  
Keyword(s):  
Stress Evolution ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

scholarly journals Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates

2013 ◽  
Vol 43 (4) ◽  
pp. 814-818 ◽  
Author(s):  
E. Richter ◽  
S. Fleischmann ◽  
D. Goran ◽  
S. Hagedorn ◽  
W. John ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

2006 ◽  
Vol 203 (7) ◽  
pp. 1632-1635 ◽  
Author(s):  
K. Nakano ◽  
M. Imura ◽  
G. Narita ◽  
T. Kitano ◽  
Y. Hirose ◽  
...  
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Patterned Sapphire Substrates

High Quality AlN Layer Grown on Patterned Sapphire Substrates by Hydride Vapor-Phase Epitaxy: A Route for Cost Efficient AlN Templates for Deep Ultraviolet Light Devices

2021 ◽  
Vol 21 (9) ◽  
pp. 4881-4885
Author(s):  
Seung-Jae Lee ◽  
Seong-Ran Jeon ◽  
Young Ho Song ◽  
Young-Jun Choi ◽  
Hae-Gon Oh ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Order Of Magnitude ◽  
Cost Efficient ◽  
Patterned Sapphire Substrates

We report the characteristics of AlN epilayers grown directly on cylindrical-patterned sapphire substrates (CPSS) by hydride vapor-phase epitaxy (HVPE). To evaluate the effect of CPSS, we analyzed the threading dislocation densities (TDDs) of AlN films grown simultaneously on CPSS and flat sapphire substrate (FSS) by transmission electron microscopy (TEM). The corresponding TDD is measured to be 5.69 x 108 cm−2 for the AlN sample grown on the CPSS that is almost an order of magnitude lower than the value of 3.43 × 109 cm−2 on the FSS. The CPSS contributes to reduce the TDs originated from the AlN/sapphire interface via bending the TDs by lateral growth during the coalescence process. In addition, the reduction of direct interface area between AlN and sapphire by CPSS reduce the generation of TDs.

Development of high efficient ultraviolet LEDs on hybrid patterned sapphire substrates

2021 ◽  
Author(s):  
Huabin Yu ◽  
Hongfeng Jia ◽  
Zhongling Liu ◽  
Muhammad Memon ◽  
Meng Tian ◽  
...  
Keyword(s):  
Sapphire Substrates ◽  
High Efficient ◽  
Patterned Sapphire Substrates
Sign in / Sign up

Export Citation Format

Share Document