A Simple Electron Mobility Model Considering the Impact of Silicon-Dielectric Interface Orientation for Surrounding Gate Devices

2019 ◽  
Vol 39 (1) ◽  
pp. 179-186
Author(s):  
André L. Perin ◽  
Arianne S. Pereira ◽  
Paula G. Agopian ◽  
João A. Martino ◽  
Renato C. Giacomini
Keyword(s):  
Electron Mobility ◽  
Mobility Model ◽  
Dielectric Interface ◽  
Surrounding Gate ◽  
Interface Orientation ◽  
The Impact

scholarly journals A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor

2012 ◽  
Vol 7 (2) ◽  
pp. 100-106
Author(s):  
André L. Perin ◽  
Arianne S. N. Pereira ◽  
Paula Ghedini Der Agopian ◽  
João Antonio Martino ◽  
Renato Giacomini
Keyword(s):  
Experimental Data ◽  
Simple Model ◽  
Electron Mobility ◽  
Crystallographic Orientation ◽  
Mobility Model ◽  
Dielectric Interface ◽  
Proposed Model ◽  
Surrounding Gate ◽  
Effective Mobility ◽  
Interface Orientation

In this work, a simple model that accounts for the variation of electron mobility as a function of the silicondielectric interface crystallographic orientation is presented. Simulations were conducted in order to compute the effective mobility of planar devices and its results were compared to experimental data for several interface orientations. The error between experimental data and the proposed model remained bellow 4%. The model has been applied to nMOS circular surrounding gate (thin-pillar transistor - CYNTHIA) and allowed the observation of current density variations as a function of the interface orientation around the silicon pillar.

Experimental and Numerical Study on Uniaxial-Stress Effects of N-Type Metal-Oxide-Semiconductor Field Effect Transistors

2011 ◽  
Author(s):  
Masaaki Koganemaru ◽  
Keisuke Yoshida ◽  
Naohiro Tada ◽  
Toru Ikeda ◽  
Noriyuki Miyazaki ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Device Simulation ◽  
Uniaxial Stress ◽  
Mobility Model ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
The Impact

In this study, the effects of uniaxial stress on n-type metal-oxide-semiconductor field effect transistors are investigated by experiments and numerical simulations. In the numerical evaluation, mechanical stress simulation and drift-diffusion device simulation are conducted to consider the impact of stress distribution in the device. The device simulation incorporates an electron mobility model by considering the effects of stress on the following: 1) change in relative population, 2) momentum relaxation time and 3) effective mass of electrons in conduction-band valleys. The variations in the dc characteristics (i.e., drain current and transconductance) of n-type metal-oxide-semiconductor field effect transistors with a gate length of 12μm are evaluated under (nominal) uniaxial stress applied to the device parallel (0°), 45° and perpendicular (90°) to the current flow direction. The results of device simulation are in good qualitative agreement with the experimental results; the device simulation including the present electron mobility model can determine the uniaxial-load-direction dependence of the stress sensitivity of the change in transconductance.

scholarly journals Students Social Based Mobility Model for MANET-DTN Networks

2017 ◽  
Vol 2017 ◽  
pp. 1-13 ◽  
Author(s):  
Dávid Hrabčák ◽  
Martin Matis ◽  
L’ubomír Doboš ◽  
Ján Papaj
Keyword(s):  
Social Relations ◽  
Real World ◽  
Routing Protocols ◽  
Social Relation ◽  
Mobility Model ◽  
Daily Routine ◽  
Mobility Models ◽  
Simulation Tools ◽  
The Impact ◽  
Wireless Mobile

In the real world, wireless mobile devices are carried by humans. For this reason, it is useful if mobility models as simulation tools used to test routing protocols and other MANET-DTN features follow the behaviour of humans. In this paper, we propose a new social based mobility model called Students Social Based Mobility Model (SSBMM). This mobility model is inspired by the daily routine of student’s life. Since many current social based mobility models give nodes freedom in terms of movement according to social feeling and attractivity to other nodes or places, we focus more on the mandatory part of our life, such as going to work and school. In the case of students, this mandatory part of their life is studying in university according to their schedule. In their free time, they move and behave according to attractivity to other nodes or places of their origin. Finally, proposed SSBMM was tested and verified by Tools for Evaluation of Social Relation in Mobility Models and compared with random based mobility models. At the end, SSBMM was simulated to examine the impact of social relations on routing protocols.

scholarly journals X-ray absorption spectroscopy elucidates the impact of structural disorder on electron mobility in amorphous zinc-tin-oxide thin films

2014 ◽  
Vol 104 (24) ◽  
pp. 242113 ◽  
Author(s):  
Sin Cheng Siah ◽  
Sang Woon Lee ◽  
Yun Seog Lee ◽  
Jaeyeong Heo ◽  
Tomohiro Shibata ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Spectroscopy ◽  
Tin Oxide ◽  
Electron Mobility ◽  
Structural Disorder ◽  
Oxide Thin Films ◽  
X Ray ◽  
Zinc Tin Oxide ◽  
The Impact ◽  
X Ray Absorption

scholarly journals Modeling Charging Infrastructure Requirements to Achieve a Holistic E-Mobility Integration in Regional Energy Systems

2021 ◽  
Author(s):  
Dominik Husarek ◽  
Simon Paulus ◽  
Michael Metzger ◽  
Vjekoslav Salapic ◽  
Stefan Niessen
Keyword(s):  
Rural Areas ◽  
Urban Areas ◽  
Mobility Model ◽  
Residential Areas ◽  
Charging Infrastructure ◽  
Charging System ◽  
Charging Station ◽  
Grid Operators ◽  
Regional Energy Systems ◽  
The Impact

Since E-Mobility is on the rise worldwide, large Charging Infrastructure (CI) networks are required to satisfy the upcoming Charging Demand (CD). Understanding this CD with its spatial and temporal uncertainties is important for grid operators to quantify the grid impact of Electric Vehicle integration and for Charging Station (CS) operators to assess long-term CI investments. Hence, we introduce an Agent-based E-Mobility Model assessing regional CI systems with their multi-directional interactions between CSs and vehicles. A Global Sensitivity Analysis (GSA) is applied to quantify the impact of 11 technical levers on 17 relevant charging system outputs. The GSA evaluates the E-Mobility integration in terms of grid impact, economic viability of CSs and Service Quality of the deployed Charging Infrastructure (SQCI). Based on this impact assessment we derive general guidelines for E-Mobility integration into regional systems. We found, inter alia, that CI policies should aim at allocating CSs across different types of locations to utilize cross-locational effects such as CSs at public locations affecting the charging peak in residential areas by up to 18%. Additionally, while improving the highway charging network is an effective lever to increase the SQCI in urban areas, public charging is an even stronger lever in rural areas.

Modeling the Impact of Packaging Stress on Device Performance

2005 ◽  
Vol 863 ◽  
Author(s):  
Xiaopeng Xu ◽  
Victor Moroz
Keyword(s):  
Normal Stress ◽  
Mobility Model ◽  
External Pressure ◽  
Stress Pattern ◽  
Fabrication Process ◽  
Device Performance ◽  
Stress Evolution ◽  
Transistor Fabrication ◽  
The Impact ◽  
Additional Device

AbstractIn this study the stress evolution for the entire transistor fabrication process is simulated and the packaging stress is modeled as the external pressure/normal stress acting on the boundaries of the transistor unit cell. The impact on device performance from both the fabrication stress and the packaging stress is investigated using a classical piezo-resistance mobility model. The effect of the packaging stress on device mobility can be either beneficial or detrimental depending on whether the stress is tensile or compressive, on stress pattern, its magnitude, and the transistor type. The results suggest that utilizing both the fabrication stress and the packaging stress for stress engineering can lead to additional device performance enhancements.

Cooperation Strategies for P2P Content Distribution in Cellular Mobile Networks

2011 ◽  
pp. 152-165
Author(s):  
Tobias Hoßfeld ◽  
Michael Duelli ◽  
Dirk Staehle ◽  
Phuoc Tran-Gia
Keyword(s):  
Cellular Networks ◽  
Mobile Networks ◽  
Content Distribution ◽  
Vertical Handover ◽  
Mobility Model ◽  
Computational Time ◽  
Heterogeneous Environments ◽  
Cellular Mobile ◽  
The Impact

The performance of P2P content distribution in cellular networks depends highly on the cooperation and coordination of heterogeneous and often selfish mobile users. The major challenges are the identification of problems arising specifically in cellular mobile networks and the development of new cooperation strategies to overcome these problems. In the coherent previous chapter, the authors focused on the selfishness of users in such heterogeneous environments. This discussion is now extended by emphasizing the impact of mobility and vertical handover between different wireless access technologies. An abstract mobility model is required to allow the performance evaluation in feasible computational time. As a result, the performance in today’s and future cellular networks is predicted and new approaches to master heterogeneity in cellular networks are derived.

The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor

2019 ◽  
Vol 33 (18) ◽  
pp. 1950190
Author(s):  
Hai Li Wang ◽  
Peng Yang ◽  
Kun Xu ◽  
Xiang Yang Duan ◽  
Shu Xiang Sun
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Transport Model ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Conduction Band Offset ◽  
Electron Mobility Transistors ◽  
The Impact

In this paper, we investigated the impact of thickness and mole fraction AlInGaN back barrier on the DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) by numerical simulation. The simulations are performed using the hydrodynamic transport model (HD). The simulation results indicated that an inserted AlInGaN back barrier with increasing thickness and mole fraction could effectively confine the electron in the channel, resulting in a significant improvement of the channel current and transconductance. Additionally, the variation of conduction band offset and the increase of total number electron in the channel led to the threshold voltage moving toward a more negative value.

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