scholarly journals Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection

2011 ◽  
Vol 158 (5) ◽  
pp. C132 ◽  
Author(s):  
S. E. Potts ◽  
L. Schmalz ◽  
M. Fenker ◽  
B. Díaz ◽  
J. Światowska ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Corrosion Protection ◽  
Oxide Films ◽  
Aluminium Oxide ◽  
Atomic Layer ◽  
Layer Deposition

Tribological study of hafnium dioxide and aluminium oxide films grown by atomic layer deposition on glass substrate

2020 ◽  
Vol 709 ◽  
pp. 138191
Author(s):  
R. Pietruszka ◽  
B.S. Witkowski ◽  
S. Zimowski ◽  
T. Stapinski ◽  
M. Godlewski
Keyword(s):  
Atomic Layer Deposition ◽  
Glass Substrate ◽  
Oxide Films ◽  
Aluminium Oxide ◽  
Atomic Layer ◽  
Hafnium Dioxide ◽  
Tribological Study ◽  
Layer Deposition

Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC

2005 ◽  
pp. 705-708
Author(s):  
Marc Avice ◽  
Ulrike Grossner ◽  
Edouard V. Monakhov ◽  
Joachim Grillenberger ◽  
Ola Nilsen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Aluminium Oxide ◽  
Atomic Layer ◽  
Layer Deposition

Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

2002 ◽  
Vol 92 (10) ◽  
pp. 5698-5703 ◽  
Author(s):  
Kaupo Kukli ◽  
Mikko Ritala ◽  
Jonas Sundqvist ◽  
Jaan Aarik ◽  
Jun Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Contactless Measurement ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

scholarly journals RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

2013 ◽  
Vol 123 (5) ◽  
pp. 899-903 ◽  
Author(s):  
R. Ratajczak ◽  
A. Stonert ◽  
E. Guziewicz ◽  
S. Gierałtowska ◽  
T.A. Krajewski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Layer Deposition

scholarly journals In situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide

2019 ◽  
Vol 21 (3) ◽  
pp. 1393-1398 ◽  
Author(s):  
Robert H. Temperton ◽  
Andrew Gibson ◽  
James N. O'Shea
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Growth Process ◽  
Aluminium Oxide ◽  
Atomic Layer ◽  
Xps Analysis ◽  
Layer Deposition ◽  
Titanium Dioxide Surface ◽  
Rutile Titanium Dioxide

Ultra-thin aluminium oxide was grown on a rutile titanium dioxide surface by atomic layer deposition using trimethylaluminium and water precursors. XPS measurements were made during the growth process at near-ambient pressures.

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