Atomic Layer Deposition of RuAlO Thin Films as a Diffusion Barrier for Seedless Cu Interconnects

2011 ◽  
Vol 14 (5) ◽  
pp. D57 ◽  
Author(s):  
Taehoon Cheon ◽  
Sang-Hyeok Choi ◽  
Soo-Hyun Kim ◽  
Dae-Hwan Kang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Cu Interconnects ◽  
Layer Deposition

The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties

2002 ◽  
Vol 716 ◽  
Author(s):  
H. Kim ◽  
C. Cabral ◽  
C. Lavoie ◽  
S.M. Rossnagel
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Growth Parameters ◽  
Atomic Layer ◽  
Barrier Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition

AbstractTa films were grown by plasma-enhanced atomic layer deposition (PE-ALD) at temperatures from room temperature up to 300 °C using TaCl5 as source gas and RF plasma-produced atomic H as the reducing agent. Post-deposition ex situ chemical analyses showed that the main impurity is oxygen, incorporated during the air exposure prior to analysis with typically low Cl concentration below 1 at %. The X-ray diffraction indicates that ALD Ta films are amorphous or composed of nano-grains. The typical resistivity of ALD Ta films was 150-180 μΩ cm, which corresponds to that of β-Ta phase, at a wide range of growth parameters. The conformality of the film is 100 % up to an aspect ratio of 15:1 and 40 % for aspect ratio of 40:1. The thickness per cycle, corresponding to the growth rate, was measured by Rutherford back scattering as a function of various key growth parameters, including TaCl5 and H exposure time and growth temperature. The maximum thickness per cycle values were below 0.1 ML, probably due to the steric hindrance for TaCl5 adsorption. Bilayer structures consisting of Cu films deposited by sputtering and ALD Ta films with various thicknesses were prepared and the diffusion barrier properties of ALD Ta films were investigated by various analysis techniques consisting of X-ray diffraction, elastic light scattering, and resistance analysis. The results were compared with Ta thin films deposited by sputtering with comparable thicknesses. Also, the growth of TaN films by PE-ALD using consecutive exposures of atomic H and activated N2 is presented.

Highly Conformal Amorphous W–Si–N Thin Films by Plasma-Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization

2015 ◽  
Vol 119 (3) ◽  
pp. 1548-1556 ◽  
Author(s):  
Tae Eun Hong ◽  
Jae-Hun Jung ◽  
Seungmin Yeo ◽  
Taehoon Cheon ◽  
So Ik Bae ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Cu Metallization ◽  
Layer Deposition
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