Integrated Full−Bit Shift Register by Low−Temperature Amorphous Indium Gallium Zinc Oxide Thin−Film Transistors

2011 ◽  
Vol 14 (5) ◽  
pp. J19 ◽  
Author(s):  
Abbas Jamshidi−Roudbari ◽  
Shahrukh A. Khan ◽  
Miltiadis K. Hatalis
2018 ◽  
Vol 6 (38) ◽  
pp. 10376-10376
Author(s):  
Hyukjoon Yoo ◽  
Young Jun Tak ◽  
Won-Gi Kim ◽  
Yeong-gyu Kim ◽  
Hyun Jae Kim

Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.


2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  

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