Structural and Electrical Properties of Low Temperature Direct Bonded Germanium to Silicon Wafer for Photodetector Applications

2019 ◽  
Vol 33 (4) ◽  
pp. 161-168
Author(s):  
Ran Yu ◽  
Ki Yeol Byun ◽  
Farzan Gity ◽  
John Hayes ◽  
Isabelle Ferain ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Silicon Wafer ◽  
Structural And Electrical Properties

Structural and electrical properties of low temperature deposited ITO films

2008 ◽  
Author(s):  
Kevin Füchsel ◽  
Ulrike Schulz ◽  
Norbert Kaiser ◽  
Andreas Tünnermann
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Structural And Electrical Properties ◽  
Ito Films

Structural and electrical properties of stoichiometric FeS compounds under high pressure at low temperature

2005 ◽  
Vol 71 (1) ◽  
Author(s):  
Hisao Kobayashi ◽  
Takashi Kamimura ◽  
Yasuo Ohishi ◽  
Nao Takeshita ◽  
Nobuo Môri
Keyword(s):  
High Pressure ◽  
Electrical Properties ◽  
Low Temperature ◽  
Structural And Electrical Properties

Extreme Supersaturation of Oxygen in Low Temperature Epitaxial Silicon and Silicon-Germanium Alloys

1989 ◽  
Vol 163 ◽  
Author(s):  
P.V. Schwartz ◽  
J.C. Sturm ◽  
P.M. Garone ◽  
S.A. Schwarz
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Silicon Germanium ◽  
Stacking Faults ◽  
Exact Nature ◽  
Epitaxial Silicon ◽  
Infrared Transmission ◽  
Temperature Growth ◽  
Structural And Electrical Properties ◽  
Germanium Alloy

AbstractWe report the low temperature growth (625 - 700 °C) of epitaxial silicon and silicon-germanium alloy films by vapor phase techniques with oxygen concentrations approximately 1020 cm-3. These concentrations are well above the accepted solid solubility for oxygen in silicon. The films, however, have excellent structural and electrical properties with virtually no stacking faults or “haze”. Infrared transmission analysis suggests the possible presence of OH, but the exact nature of the oxygen is not known.

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