Structural and electrical properties of low temperature deposited ITO films

2008 ◽  
Author(s):  
Kevin Füchsel ◽  
Ulrike Schulz ◽  
Norbert Kaiser ◽  
Andreas Tünnermann
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Structural And Electrical Properties ◽  
Ito Films

Structural and Electrical Properties of Low Temperature Direct Bonded Germanium to Silicon Wafer for Photodetector Applications

2019 ◽  
Vol 33 (4) ◽  
pp. 161-168
Author(s):  
Ran Yu ◽  
Ki Yeol Byun ◽  
Farzan Gity ◽  
John Hayes ◽  
Isabelle Ferain ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Silicon Wafer ◽  
Structural And Electrical Properties

Influence of Structural and Electrical Properties of ITO Films on Electrochromic Properties of WO3 Films

2008 ◽  
Vol 55-57 ◽  
pp. 921-924
Author(s):  
K. Aiempanakit ◽  
Supattanapong Dumrongrattana ◽  
P. Rakkwamsuk
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Indium Tin Oxide ◽  
X Ray Diffraction ◽  
Electrochromic Properties ◽  
Substrate Heating ◽  
Structural And Electrical Properties ◽  
Show Difference ◽  
Substrate Annealing ◽  
Ito Films

Indium tin oxide (ITO) films had been deposited on glass substrate without substrate heating and then tungsten oxide (WO3) films were deposited on ITO films by DC magnetron sputtering. In this work, we present the annealing ambient effect of ITO substrate on electrochromic properties of WO3 films. The ITO films were annealing in air and in vacuum at 350°C before coating with WO3 films. The structural, optical, and electrical properties of ITO films for as-deposited, annealing in air and in vacuum were investigated by X-ray diffraction, UV-VIS-NIR spectroscope and four point probe. The ITO films had a better crystallinity and lager grain size after annealing in air and in vacuum. The resistivity of ITO films increase with annealing in air, but decrease with annealing in vacuum. The WO3 films show difference surface morphology with higher grain size and surface roughness when coating on annealed ITO films in both cases. The electrochemical properties of film systems were characterized by cyclic voltammetry. The film systems of ITO plus WO3 showed that the charge capacity of ITO substrate annealing in vacuum was higher than the as-deposited ITO substrate and the ITO substrate annealing in air, respectively. This result corresponded to electrical conductivity of each ITO substrate.

Structural and electrical properties of stoichiometric FeS compounds under high pressure at low temperature

2005 ◽  
Vol 71 (1) ◽  
Author(s):  
Hisao Kobayashi ◽  
Takashi Kamimura ◽  
Yasuo Ohishi ◽  
Nao Takeshita ◽  
Nobuo Môri
Keyword(s):  
High Pressure ◽  
Electrical Properties ◽  
Low Temperature ◽  
Structural And Electrical Properties

Extreme Supersaturation of Oxygen in Low Temperature Epitaxial Silicon and Silicon-Germanium Alloys

1989 ◽  
Vol 163 ◽  
Author(s):  
P.V. Schwartz ◽  
J.C. Sturm ◽  
P.M. Garone ◽  
S.A. Schwarz
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Silicon Germanium ◽  
Stacking Faults ◽  
Exact Nature ◽  
Epitaxial Silicon ◽  
Infrared Transmission ◽  
Temperature Growth ◽  
Structural And Electrical Properties ◽  
Germanium Alloy

AbstractWe report the low temperature growth (625 - 700 °C) of epitaxial silicon and silicon-germanium alloy films by vapor phase techniques with oxygen concentrations approximately 1020 cm-3. These concentrations are well above the accepted solid solubility for oxygen in silicon. The films, however, have excellent structural and electrical properties with virtually no stacking faults or “haze”. Infrared transmission analysis suggests the possible presence of OH, but the exact nature of the oxygen is not known.

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