Studies about Flow Rate Effect on Atomic Fluorine Generation in Inductively Coupled CF4 Plasmas: A Global Model Investigation

2019 ◽  
Vol 31 (1) ◽  
pp. 125-134
Author(s):  
Rodrigo S. Pessoa ◽  
Sergio W. Parada ◽  
Mariana A. Fraga ◽  
Marisa Roberto ◽  
Homero S. Maciel ◽  
...  
Keyword(s):  
Flow Rate ◽  
Rate Effect ◽  
Global Model ◽  
Model Investigation ◽  
Inductively Coupled ◽  
Atomic Fluorine ◽  
Flow Rate Effect

scholarly journals Ar flow-rate effect for low-resistivity Al/Ti/Al Ohmic contact to n-ZnO thin films

2019 ◽  
Vol 1 (1) ◽  
pp. 23
Author(s):  
Feri Adriyanto
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Substrate Surface ◽  
Rate Effect ◽  
Contact Resistivity ◽  
Zno Thin Films ◽  
Sputtering Power ◽  
Specific Contact ◽  
Doped Zno ◽  
Flow Rate Effect

<p class="Abstract">The Ar flow rate effect on the electrical and optical properties of the sputtered Al-doped ZnO thins films were investigated. It was shown that a strong X-ray peak from (002) and (004) planes is dominant, suggesting that most grains have <em>c</em>-axis perpendicular to the substrate surface. The (002)-ZnO and (004)-ZnO peaks were measured at 2q = 34.12<sup>0</sup>, and 71.85<sup>0</sup>, respectively. It was also found that the growth rate of the Al-doped ZnO thin films increases when the sputtering power is increased. The transmittance of these film are strongly dependent on the sputtering power with the maximum transmittance of 92% was obtained at the sputtering power of 150 W and 50 sccm of Ar flow rate. The resistivity of the films is decreases as the Ar flow rate is increased. The lowest resistivity of 9.74 x 10<sup>-4</sup> W.cm was obtained at the films with Ar flow rate of 80 sccm. The mobility increases with the Ar flow rate increases. The carrier concentration also indicates the same pattern as the mobility. The transmittance of Al-doped ZnO thin films is also strongly dependent on the Ar flow rate. It was also observed the variation of contact resistivity of Al/Ti/Al to Al-doped n-ZnO thin films. The specific contact resistivity <em>r<sub>c</sub></em> of 1.8x10<sup>−5</sup> W.cm<sup>2</sup> was obtained at 150 nm-thick Al.</p>

Observation of pressure gradient and related flow rate effect on the plasma parameters in plasma processing reactor

2011 ◽  
Vol 18 (2) ◽  
pp. 023501 ◽  
Author(s):  
Hyo-Chang Lee ◽  
Aram Kim ◽  
Se Youn Moon ◽  
Chin-Wook Chung
Keyword(s):  
Pressure Gradient ◽  
Flow Rate ◽  
Plasma Processing ◽  
Rate Effect ◽  
Plasma Parameters ◽  
Flow Rate Effect

Disilane addition versus silane-hydrogen flow rate effect on the PECVD of silicon thin films

2016 ◽  
Vol 34 (6) ◽  
pp. 061307
Author(s):  
Panagiotis Dimitrakellis ◽  
Eleftherios Amanatides ◽  
Dimitrios Mataras ◽  
Angelos G. Kalampounias ◽  
Nikolaos Spiliopoulos ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Rate Effect ◽  
Hydrogen Flow Rate ◽  
Hydrogen Flow ◽  
Silicon Thin Films ◽  
Flow Rate Effect

ESTIMATION OF THE FLOW RATE EFFECT ON HEAT EXCHANGE IN THE WELLBORE USING A QUASI-STATIONARY THERMOGRAM

2020 ◽  
Author(s):  
Марат Финатович Закиров ◽  
Айрат Шайхуллинович Рамазанов ◽  
Рим Абдуллович Валиуллин
Keyword(s):  
Heat Exchange ◽  
Temperature Profile ◽  
Flow Rate ◽  
Rate Effect ◽  
Flow Rate Effect

В работе представлен способ расчета термограммы для квазистационарной работы скважины. Установлено влияние дебита потока на возникающий тепло-обмен с окружающими горными породами. Результаты работы могут быть использованы для анализа профиля температуры в зависимости от расхода скважины. The paper presents a method for calculating a thermogram for quasi-stationary well operation. The influence of the flow rate on the resulting heat exchange with the surrounding rocks is established. The results of the work can be used to analyze the temperature profile depending on the well flow rate.

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