Disilane addition versus silane-hydrogen flow rate effect on the PECVD of silicon thin films

2016 ◽  
Vol 34 (6) ◽  
pp. 061307
Author(s):  
Panagiotis Dimitrakellis ◽  
Eleftherios Amanatides ◽  
Dimitrios Mataras ◽  
Angelos G. Kalampounias ◽  
Nikolaos Spiliopoulos ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Rate Effect ◽  
Hydrogen Flow Rate ◽  
Hydrogen Flow ◽  
Silicon Thin Films ◽  
Flow Rate Effect

Amorphous-to-nanocrystalline transition in silicon thin films by hydrogen diluted silane using PE-CVD method

2020 ◽  
Vol 13 ◽  
Author(s):  
Ashok Jadhavar ◽  
Vidya Doiphode ◽  
Ajinkya Bhorde ◽  
Yogesh Hase ◽  
Pratibha Shinde ◽  
...  
Keyword(s):  
Flow Rate ◽  
Volume Fraction ◽  
Defect Density ◽  
Hydrogen Flow Rate ◽  
Spectroscopy Analysis ◽  
Deposition Parameter ◽  
Hydrogen Flow ◽  
Cvd Method ◽  
Silicon Thin Films ◽  
Increasing Trend

: Herein, we report effect of variation of hydrogen flow rate on properties of Si:H films synthesized using PE-CVD method. Raman spectroscopy analysis show increase in crystalline volume fraction and crystallite size implying that hydrogen flow in PECVD promote the growth of crystallinity in nc-Si:H films with an expense of reduction in deposition rate. FTIR spectroscopy analysis indicates that hydrogen content in the film increases with increase in hydrogen flow rate and hydrogen is predominantly incorporated in Si-H2 and (Si-H2)n bonding configuration. The optical band gap determined using E04 method and Tauc method (ETauc) show increasing trend with increase in hydrogen flow rate and E04 is found higher than ETauc over the entire range of hydrogen flow rate studied. We also found that the defect density and Urbach energy also increases with increase in hydrogen flow rate. Photosensitivity (Photo /Dark) decreases from  103 to  1 when hydrogen flow rate increased from 30 sccm to 100 sccm and can attributed to amorphous-to-nanocrystallization transition in Si:H films. The results obtained from the present study demonstrated that hydrogen flow rate is an important deposition parameter in PE-CVD to synthesize nc-Si:H films.

scholarly journals Ar flow-rate effect for low-resistivity Al/Ti/Al Ohmic contact to n-ZnO thin films

2019 ◽  
Vol 1 (1) ◽  
pp. 23
Author(s):  
Feri Adriyanto
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Substrate Surface ◽  
Rate Effect ◽  
Contact Resistivity ◽  
Zno Thin Films ◽  
Sputtering Power ◽  
Specific Contact ◽  
Doped Zno ◽  
Flow Rate Effect

<p class="Abstract">The Ar flow rate effect on the electrical and optical properties of the sputtered Al-doped ZnO thins films were investigated. It was shown that a strong X-ray peak from (002) and (004) planes is dominant, suggesting that most grains have <em>c</em>-axis perpendicular to the substrate surface. The (002)-ZnO and (004)-ZnO peaks were measured at 2q = 34.12<sup>0</sup>, and 71.85<sup>0</sup>, respectively. It was also found that the growth rate of the Al-doped ZnO thin films increases when the sputtering power is increased. The transmittance of these film are strongly dependent on the sputtering power with the maximum transmittance of 92% was obtained at the sputtering power of 150 W and 50 sccm of Ar flow rate. The resistivity of the films is decreases as the Ar flow rate is increased. The lowest resistivity of 9.74 x 10<sup>-4</sup> W.cm was obtained at the films with Ar flow rate of 80 sccm. The mobility increases with the Ar flow rate increases. The carrier concentration also indicates the same pattern as the mobility. The transmittance of Al-doped ZnO thin films is also strongly dependent on the Ar flow rate. It was also observed the variation of contact resistivity of Al/Ti/Al to Al-doped n-ZnO thin films. The specific contact resistivity <em>r<sub>c</sub></em> of 1.8x10<sup>−5</sup> W.cm<sup>2</sup> was obtained at 150 nm-thick Al.</p>

The Influence of Deposition Conditions on the Properties of a-Sic:H Thin Films

1990 ◽  
Vol 192 ◽  
Author(s):  
L. Magafas ◽  
D. Girginoudi ◽  
N. Georgoulas ◽  
A. Thanailakis
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Optical Absorption ◽  
Flow Rate ◽  
Growth Conditions ◽  
Optical Absorption Coefficient ◽  
Hydrogen Flow Rate ◽  
Hydrogen Flow ◽  
Composition Structure ◽  
Deposition Conditions

ABSTRACTThe dependence of chemical composition, structure and optoelectronic properties of sputtered a-SiC:H thin films on substrate temperature, Ts, and hydrogen flow rate has been studied. The films are amorphous for the growth conditions used in this work. The chemical composition of the alloys is very little influenced by the Ts, whereas the hydrogen content and the optical absorption coefficient depends strongly on Ts and hydrogen flow rate.

Impact of Hydrogen flow rate on physical properties of ZnS thin films: As potential buffer layer in solar cells

2020 ◽  
Vol 105 ◽  
pp. 109899 ◽  
Author(s):  
Divya Agrawal ◽  
S.L. Patel ◽  
Himanshu ◽  
S. Chander ◽  
M.S. Dhaka
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Physical Properties ◽  
Buffer Layer ◽  
Flow Rate ◽  
Hydrogen Flow Rate ◽  
Hydrogen Flow
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