Concentration-Dependent Wet Etching Behaviors of Ga-Doped ZnO Films Sputter-Deposited at Room Temperature Using Formic and Citric Acids

2010 ◽  
Vol 157 (7) ◽  
pp. D428
Author(s):  
Dong-Kyoon Lee ◽  
Ji-Hye Kwon ◽  
Young Soo Lim ◽  
Heesun Yang
2010 ◽  
Vol 518 (14) ◽  
pp. 4046-4051 ◽  
Author(s):  
Dong-Kyoon Lee ◽  
Jungsik Bang ◽  
Mungi Park ◽  
Jae-Ho Lee ◽  
Heesun Yang

2009 ◽  
Vol 60 (4) ◽  
pp. 214-217 ◽  
Author(s):  
L.J. Zhuge ◽  
X.M. Wu ◽  
Z.F. Wu ◽  
X.M. Chen ◽  
Y.D. Meng

2010 ◽  
Vol 50 (9) ◽  
pp. C197 ◽  
Author(s):  
Meng-Chi Li ◽  
Chien-Cheng Kuo ◽  
Ssu-Hsiang Peng ◽  
Sheng-Hui Chen ◽  
Cheng-Chung Lee
Keyword(s):  

2009 ◽  
Vol 64 (11) ◽  
pp. 765-768 ◽  
Author(s):  
Fan-Yong Ran ◽  
Masaki Tanemura ◽  
Yasuhiko Hayashi ◽  
Norihiro Ide ◽  
Masao Imaoka ◽  
...  

Wurtzite structure ZnO films (3×3 mm2) with a partial-area Cu doping were successfully prepared using a micro-area Ar+-ion beam (~ 380 μm in diameter) and a simultaneous Cu supply at room temperature. A Cu2O phase was formed in the ZnO films by Cu doping. The partially Cu-doped ZnO films exhibited room-temperature ferromagnetism (RTFM) with a saturation magnetization of 1.6×10−5 emu and a coercive field of 40 Oe. Since Zn, Cu, and their compounds are not ferromagnetic, the observed RTFMis attributed to the intrinsic property of Cu-doped ZnO films. As confirmed by the low temperature photoluminescence (PL) spectra, no serious optical damage was recognized in the region without Ar+-ion irradiation. Thus, it was believed that the micro-area Ar+-ion irradiation with a simultaneous Cu supply was promising to integrate the magnetic and optical properties of ZnO-based materials.


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