Electron Tunneling Between Si Quantum Dots and Two Dimensional Electron Gas under Optical Excitation at Low Temperatures

2019 ◽  
Vol 28 (1) ◽  
pp. 369-374
Author(s):  
Yoko Sakurai ◽  
Yukihiro Takada ◽  
Juin-Ichi Iwata ◽  
Kenji Shiraishi ◽  
Shintaro Nomura ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Low Temperatures ◽  
Electron Tunneling ◽  
Electron Gas ◽  
Optical Excitation ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Si Quantum Dots

scholarly journals Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots

2010 ◽  
Vol 49 (1) ◽  
pp. 014001 ◽  
Author(s):  
Yoko Sakurai ◽  
Jun-ichi Iwata ◽  
Masakazu Muraguchi ◽  
Yasuteru Shigeta ◽  
Yukihiro Takada ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Electron Tunneling ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Si Quantum Dots

Sensitivity To Disorder Of Graphene-Like Lattices Of Quantum Dots And Antidots In Two-Dimensional Electron Gas

2016 ◽  
Vol 11 (1) ◽  
pp. 80-87
Author(s):  
Olga Tkachenko ◽  
Vitaliy Tkachenko
Keyword(s):  
Quantum Dots ◽  
Electron Gas ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Semiconductor Structures ◽  
Dimensional Electron Gas ◽  
Artificial Graphene ◽  
Electronic Channels

We compare three-dimensional electrostatics of semiconductor structures with graphene-like lattices of quantum dots and antidots formed in the plane of the two dimensional electron gas. With lattice constant fixed, the shape of the potential may be tuned so that both lattices have minband spectrum where the second Dirac feature is pronounced and not overlaid by the other states. We show that the lattice of quantum dots is more sensitive to fabrication imperfections, because sources of the disorder are located directly above the electronic channels. Thus the lattices of antidots should be preferred semiconductor artificial graphene candidates.

scholarly journals Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas

2013 ◽  
Vol 102 (10) ◽  
pp. 103507 ◽  
Author(s):  
W. Y. Mak ◽  
F. Sfigakis ◽  
K. Das Gupta ◽  
O. Klochan ◽  
H. E. Beere ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Undoped Gaas

Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures

2001 ◽  
Vol 693 ◽  
Author(s):  
Z. W. Zheng ◽  
B. Shen ◽  
C. P. Jiang ◽  
S. L. Guo ◽  
J. Liu ◽  
...  
Keyword(s):  
Elastic Scattering ◽  
Low Temperatures ◽  
Strain Relaxation ◽  
Electron Gas ◽  
High Magnetic Fields ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Increasing Temperature

AbstractMagnetotransport properties of Al0.22Ga0.78N/GaN modulation-doped heterostructures have been studied at low temperatures and high magnetic fields. The inter-subband scattering of the two-dimensional electron gas was observed. The inter-subband scattering is very weak and depends weakly on temperature when temperature is between 1.3 K and 10 K and becomes stronger with increasing temperature when temperature is higher than 10 K. The strain relaxation of the Al0.22Ga0.78N layer influences the inter-subband scattering. It is suggested that the inter-subband scattering is dominant by the elastic scattering when temperature is lower than 10 K, and changes to be dominant by the inelastic scattering of the acoustic phonons when temperature is higher than 10 K.

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