Effects of Contact Area on Mechanical Strength, Electrical Resistance, and Electromigration Reliability of Cu/Low-k Interconnects

2010 ◽  
Vol 13 (6) ◽  
pp. H197 ◽  
Author(s):  
C.-C. Yang ◽  
T. Shaw ◽  
A. Simon ◽  
D. Edelstein
Keyword(s):  
Mechanical Strength ◽  
Contact Area ◽  
Electrical Resistance ◽  
Low K

Measuring contact area in synthetic vocal fold replicas using electrical resistance

2016 ◽  
Vol 139 (4) ◽  
pp. 2221-2221
Author(s):  
Kyle L. Syndergaard ◽  
Stephen Warner ◽  
Shelby Dushku ◽  
Scott L. Thomson
Keyword(s):  
Contact Area ◽  
Electrical Resistance ◽  
Vocal Fold

Slurry Development For Cu/Ultra Low k CMP

2003 ◽  
Vol 767 ◽  
Author(s):  
Hugh Li ◽  
Matt VanHaneham ◽  
John Quanci
Keyword(s):  
Dielectric Constant ◽  
Mechanical Strength ◽  
Chemical Reactions ◽  
Relative Velocity ◽  
Planarization Process ◽  
Technical Challenges ◽  
Low K

Conventional CMP for Cu/Ultra-low k (k<2.4) integration faces significant technical challenges [1-2]. The majority of ULK materials are made porous to reduce the dielectric constant, while trading off on the mechanical strength [3-6]. With diminished hardness, elasticity and adhesion, the CMP process has to be “kinder and gentler”: lower down force, lower relative velocity, softer pad, and slurry with lower abrasive content [1,7]. In a word, the mechanical portion of the planarization process would be greatly reduced. To maintain the same performance, one has to rely on the chemical reactions to make Cu/ULK CMP a viable process.

Effect of Plasma Treatment and TMCTS Vapor Annealing on the Reinforcement of Porous low-k Films

2005 ◽  
Vol 863 ◽  
Author(s):  
Kazuo Kohmura ◽  
Hirofumi Tanaka ◽  
Shunsuke Oike ◽  
Masami Murakami ◽  
Tetsuo Ono ◽  
...  
Keyword(s):  
Mechanical Strength ◽  
Plasma Treatment ◽  
Polymer Network ◽  
Porous Silica ◽  
Argon Plasma ◽  
Silica Films ◽  
Oh Groups ◽  
Vapor Annealing ◽  
Silica Wall ◽  
Low K

AbstractA novel process of TMCTS vapor annealing combined with a plasma treatment has been developed for improving the mechanical strength of porous silica films having ultralow dielectric constant. When porous silica films annealed under 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) vapor were treated with argon plasma and then re-treated with TMCTS vapor, the mechanical strength (i.e., elastic modulus, hardness) of the films increased significantly. Results of Fourier transform infrared spectroscopy (FT-IR) suggested an accelerative effect resulted from the plasma treatment on the conversion of Si-CH3 and Si-H groups to Si-OH groups. The latter group appears to react faster with TMCTS from the second annealing to form cross-linked polymer network on the porous silica wall surfaces. The resulting cross-linked network is thought to keep the low permittivity and enhance the mechanical strength of the low-k films.

A Novel Organosiloxane Vapor Annealing Process for Improving Elastic Modulus of Porous Low-k Films

2004 ◽  
Vol 812 ◽  
Author(s):  
Kazuo Kohmura ◽  
Shunsuke Oike ◽  
Masami Murakami ◽  
Hirofumi Tanaka ◽  
Syozo Takada ◽  
...  
Keyword(s):  
Elastic Modulus ◽  
Mechanical Strength ◽  
Porous Silica ◽  
Thermal Desorption Spectroscopy ◽  
Silica Film ◽  
Low Dielectric ◽  
Porous Silica Film ◽  
Vapor Annealing ◽  
Ft Ir ◽  
Low K

AbstractA novel organosiloxane-vapor-annealing method has been developed for improving the mechanical strength of porous silica films with a low dielectric constant. Treatment of a porous silica film with 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) under atmospheric nitrogen above 350 °C significantly enhanced the mechanical strength (i.e., elastic modulus and hardness) of the film. Results of Fourier transform infrared spectroscopy (FT-IR) and thermal desorption spectroscopy (TDS) suggested the formation of cross-linked poly(TMCTS) network on the porous silica internal wall surfaces by the TMCTS treatment. Such TMCTS cross-linked network is thought to enhance the mechanical strength of the low-k film.

PROPERTIES OF GLASS-LESS PHOTOIMAGEABLE PASTE FOR MULTILAYER LTCC STRUCTURES FABRICATION

2012 ◽  
Vol 2012 (CICMT) ◽  
pp. 000307-000313 ◽  
Author(s):  
Piotr Markowski ◽  
Elżbieta Zwierkowska ◽  
Malgorzata Jakubowska ◽  
Konrad Kiełbasiński ◽  
Steve Muckett
Keyword(s):  
Electrical Resistivity ◽  
Mechanical Strength ◽  
Contact Area ◽  
External Surface ◽  
Firing Process ◽  
Glass Layer ◽  
Substrate Adhesion ◽  
Buried Layers ◽  
Individual Grains ◽  
Lower Electrical Resistivity

Properties of Ag-based glass-less photoimageable paste designed for unfired LTCC were investigated. The paste isn't designed for patterns performing on the external surface of the substrate. Because it doesn't contains glass layer to substrate adhesion after the firing process is very weak. Also between individual grains of the silver there is no glass what could resulting in increased contact area of adjacent grains. It may improve the paste sintering. As a result lower electrical resistivity of the layer can be achieved. But also mechanical strength of the layer is reduced. In practice, the paste is not suitable for patterns fabrication on the external surface of the substrate - it detaches from it. The ink is designed for performing the buried layers inside LTCC ceramics. Investigations showed good compatibility of the paste and the DP951 and DP9K7 green tapes (DuPont). The tests showed designed pattern was precisely imaged on the substrate. Details had sharp, perpendicular edges what is characteristic for the photoimageable inks technique.

All-carbocycle hydrocarbon thermosets with high thermal stability and robust mechanical strength for low-k interlayer dielectrics

2021 ◽  
Author(s):  
Yudi Feng ◽  
Ke Jin ◽  
Jia Guo ◽  
Changchun Wang
Keyword(s):  
Thermal Stability ◽  
Mechanical Strength ◽  
Dielectric Materials ◽  
High Thermal Stability ◽  
Thermal Stabilities ◽  
Interlayer Dielectric ◽  
Interlayer Dielectrics ◽  
Low Permittivity ◽  
Low K

The development of modern microelectronic industry calls for low permittivity interlayer dielectric materials with excellent thermal stabilities, robust mechanical strength and matching processability. Traditionally, it is difficult to fabricate materials...

Immortal InterConnects—Prevent Cracking and Limit Void Size

1999 ◽  
Vol 563 ◽  
Author(s):  
Z. Suo ◽  
Q. Ma ◽  
W. K. Meyer
Keyword(s):  
High Pressure ◽  
Stress State ◽  
Tensile Stress ◽  
Electric Current ◽  
Contact Area ◽  
Electrical Resistance ◽  
Processing Temperature ◽  
Thermal Contraction ◽  
Temperature Differential ◽  
Void Size

AbstractThis paper considers an aluminum line in a multilevel interconnect structure. Upon cooling from the processing temperature, differential thermal contraction causes a triaxial tensile stress state in the aluminum line; voids may initiate and grow to relax the stress. When a direct voltage is applied, the electric current causes aluminum atoms to diffuse. The interconnect will evolve to a state with a high pressure at the anode, and a large void at the cathode. The pressure may crack the surrounding insulator or debond an interface, extruding aluminum. The void may uncover the via contact area, substantially increasing electrical resistance. Provided neither failure mode occurs, aluminum electromigration will stop and the interconnect will function forever. This paper examines the conditions under which the interconnect is immortal.

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