Mechanical and Microstructural Characterization of Through-Silicon Via Fabricated with Constant Current Pulse-Reverse Modulation

2010 ◽  
Vol 157 (6) ◽  
pp. D323 ◽  
Author(s):  
Nay Lin ◽  
Jianmin Miao ◽  
Pradeep Dixit
Keyword(s):  
Current Pulse ◽  
Microstructural Characterization ◽  
Constant Current ◽  
Through Silicon Via ◽  
Pulse Reverse ◽  
Constant Current Pulse

Thermal Influence on the Electric Parameters and Microstructures of Activated Powder Double Layer Supercapacitors

2017 ◽  
Vol 899 ◽  
pp. 260-265 ◽  
Author(s):  
Antonio Paulo Rodrigues Fernandez ◽  
Eguiberto Galego ◽  
Rubens Nunes de Faria Jr.
Keyword(s):  
Double Layer ◽  
Microstructural Characterization ◽  
Constant Current ◽  
X Ray ◽  
Working Temperature ◽  
Electric Parameters ◽  
Thermal Influence ◽  
Double Layer Capacitors ◽  
Discharge Curves

The effect of the working temperature on the capacity, internal equivalent serial resistance (ESR), equivalent parallel resistances (EPR) of some retail available electric double layer capacitors (EDLC) have been investigated. Standard capacities of 1.0 F at a maximum potential of 5.5 V were employed in this study. EPR values have been calculated using the self-discharge curves at temperatures above to the nominal maximum working temperature of the supercapacitors (~70°C). The ESR values were measured during charge using the constant current (1 mAF-1) interrupt method with oscilloscope. Microstructural characterization of the electrode material have been carried out using scanning electron microscopy (SEM) and chemical microanalyses employing energy dispersive X-ray analysis (EDX).

scholarly journals A comparison of various methods of measuring the time-constant of accommodation of Nerve

1936 ◽  
Vol 120 (818) ◽  
pp. 389-408 ◽  
Keyword(s):  
Current Pulse ◽  
Time Constant ◽  
Alternating Current ◽  
Constant Current ◽  
Distilled Water ◽  
Ringer’S Solution ◽  
Constant Current Pulse

In an earlier paper Hill (1936, a ) developed the theory of “accommodation” in excitable tissues. He pointed out that the measurement of its speed may be accomplished in a variety of ways. Experimental details of the method of determining the time-constant of “accommodation” (λ) in nerve, by excitation with exponentially rising currents, have been described by Solandt (1936). In the present paper the value of λ obtained by this method is compared ( a ) with that by alternating current excitation; ( b ) with that by “break” excitation at the anode at the end of a constant current pulse; and ( c ) with that by “make" excitation at the cathode at the end of a gap in a constant current. Excitation by linearly rising currents was not performed, because it is obvious that the value obtained for λ would not differ significantly from that obtained with exponentially rising currents. Method In all cases the sciatic-gastrocnemius preparation of the Hungarian bullfrog ( Rana esculnta ) was used. The experiments were performed during the winter months (November-February). Details of the treatment of the preparations prior to the determinations of λ are stated with the results. The composition of the normal Ringer’s solution used was 6·75 gm NaCl, 0·20 gm CaCl 2 , and 0·15 gm KC1 made to 1 litre with distilled water.

scholarly journals Effect of Periodic Nanostructure in Ni/Cu Multilayers Prepared with Multi-Constant Current Pulse on Their Wear Resistance Property

Materia Japan ◽  
2016 ◽  
Vol 55 (12) ◽  
pp. 601-601
Author(s):  
Toyokazu Tanabe ◽  
Kento Ito ◽  
Takao Gunji ◽  
Takeo Ohsaka ◽  
Futoshi Matsumoto ◽  
...  
Keyword(s):  
Wear Resistance ◽  
Current Pulse ◽  
Constant Current ◽  
Resistance Property ◽  
Constant Current Pulse ◽  
Periodic Nanostructure

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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